Anomalous Source-Side Degradation of InAlN/GaN HEMTs Under High-Power Electrical Stress
Yufei Wu, Sasangka, W. A., del Alamo, Jesus A.
Published in IEEE transactions on electron devices (01.11.2017)
Published in IEEE transactions on electron devices (01.11.2017)
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Journal Article
Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress
Tan, H.T., Gao, Y., Syaranamual, G.J., Sasangka, W.A., Foo, S.C., Lee, K.H., Arulkumaran, S., Ng, G.I., Thompson, C.V., Gan, C.L.
Published in Microelectronics and reliability (01.11.2023)
Published in Microelectronics and reliability (01.11.2023)
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Journal Article
Effects of forward gate bias stressing on the leakage current of AlGaN/GaN high electron mobility transistors
Gao, Y., Sasangka, W.A., Thompson, C.V., Gan, C.L.
Published in Microelectronics and reliability (01.09.2019)
Published in Microelectronics and reliability (01.09.2019)
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Journal Article
Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors
Sasangka, W.A., Gao, Y., Gan, C.L., Thompson, C.V.
Published in Microelectronics and reliability (01.09.2018)
Published in Microelectronics and reliability (01.09.2018)
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Journal Article
Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation
Syaranamual, G.J., Sasangka, W.A., Made, R.I., Arulkumaran, S., Ng, G.I., Foo, S.C., Gan, C.L., Thompson, C.V.
Published in Microelectronics and reliability (01.09.2016)
Published in Microelectronics and reliability (01.09.2016)
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Journal Article
Characterisation of defects generated during constant current InGaN-on-silicon LED operation
Made, R.I, Gao, Yu, Syaranamual, G.J., Sasangka, W.A., Zhang, L., Nguyen, Xuan Sang, Tay, Y.Y., Herrin, J.S., Thompson, C.V., Gan, C.L.
Published in Microelectronics and reliability (01.09.2017)
Published in Microelectronics and reliability (01.09.2017)
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Journal Article
Electrochemical Oxidation in AlGaN/GaN-on-Si High Electron Mobility Transistors
Gan, C. L., Sasangka, W. A., Thompson, C. V.
Published in 2019 Electron Devices Technology and Manufacturing Conference (EDTM) (01.03.2019)
Published in 2019 Electron Devices Technology and Manufacturing Conference (EDTM) (01.03.2019)
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Conference Proceeding
Mechanical property characterization of cu-Sn-In intermetallic thin films using microcantilevers
Sasangka, W. A., Gan, C. L., Thompson, C. V.
Published in 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (01.07.2011)
Published in 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (01.07.2011)
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Conference Proceeding
Effect of bonding and aging temperatures on bond strengths of Cu with 75Sn25In solders
Sasangka, W.A., Gan, C.L., Thompson, C.V., Choi, W.K., Wei, J.
Published in 2009 11th Electronics Packaging Technology Conference (01.12.2009)
Published in 2009 11th Electronics Packaging Technology Conference (01.12.2009)
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Conference Proceeding