High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric
Sasama, Yosuke, Komatsu, Katsuyoshi, Moriyama, Satoshi, Imura, Masataka, Teraji, Tokuyuki, Watanabe, Kenji, Taniguchi, Takashi, Uchihashi, Takashi, Takahide, Yamaguchi
Published in APL materials (01.11.2018)
Published in APL materials (01.11.2018)
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Journal Article
Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure
Kageura, Taisuke, Hideko, Masakuni, Tsuyuzaki, Ikuto, Morishita, Aoi, Kawano, Akihiro, Sasama, Yosuke, Yamaguchi, Takahide, Takano, Yoshihiko, Tachiki, Minoru, Ooi, Shuuichi, Hirata, Kazuto, Arisawa, Shunichi, Kawarada, Hiroshi
Published in Scientific reports (23.10.2019)
Published in Scientific reports (23.10.2019)
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Journal Article
Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures
Takahide, Yamaguchi, Sasama, Yosuke, Takeya, Hiroyuki, Takano, Yoshihiko, Kageura, Taisuke, Kawarada, Hiroshi
Published in Review of scientific instruments (01.10.2018)
Published in Review of scientific instruments (01.10.2018)
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Journal Article
Spin-State Control of Shallow Single NV Centers in Hydrogen-Terminated Diamond
Kageura, Taisuke, Sasama, Yosuke, Teraji, Tokuyuki, Watanabe, Kenji, Taniguchi, Takashi, Yamada, Keisuke, Kimura, Kosuke, Onoda, Shinobu, Takahide, Yamaguchi
Published in ACS applied materials & interfaces (13.03.2024)
Published in ACS applied materials & interfaces (13.03.2024)
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Journal Article
QUANTUM DEVICE AND METHOD FOR MANUFACTURING THE SAME
SASAMA YOSUKE, KAGEURA YASUSHI, WATANABE KENJI, ONODA SHINOBU, YAMAGUCHI NAOHIDE, TANIGUCHI TAKASHI
Year of Publication 21.02.2024
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Year of Publication 21.02.2024
Patent
MIS-TYPE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
SASAMA YOSUKE, KOMATSU KATSUYOSHI, WATANABE KENJI, YAMAGUCHI NAOHIDE, TANIGUCHI TAKASHI
Year of Publication 25.07.2019
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Year of Publication 25.07.2019
Patent
Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers
Kageura, Taisuke, Sasama, Yosuke, Yamada, Keisuke, Kimura, Kosuke, Onoda, Shinobu, Yamaguchi Takahide
Published in arXiv.org (01.08.2024)
Published in arXiv.org (01.08.2024)
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Journal Article
High-Mobility p-Channel Wide Bandgap Transistors Based on h-BN/Diamond Heterostructures
Sasama, Yosuke, Kageura, Taisuke, Imura, Masataka, Watanabe, Kenji, Taniguchi, Takashi, Uchihashi, Takashi, Yamaguchi Takahide
Published in arXiv.org (08.11.2021)
Published in arXiv.org (08.11.2021)
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Journal Article
Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures
Yamaguchi Takahide, Sasama, Yosuke, Takeya, Hiroyuki, Takano, Yoshihiko, Kageura, Taisuke, Kawarada, Hiroshi
Published in arXiv.org (20.11.2018)
Published in arXiv.org (20.11.2018)
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Journal Article
Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
Sasama, Yosuke, Kageura, Taisuke, Komatsu, Katsuyoshi, Moriyama, Satoshi, Inoue, Jun-ichi, Imura, Masataka, Watanabe, Kenji, Taniguchi, Takashi, Uchihashi, Takashi, Yamaguchi Takahide
Published in arXiv.org (17.05.2020)
Published in arXiv.org (17.05.2020)
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Journal Article
Quantum oscillations in diamond field effect transistors with a h-BN gate dielectric
Sasama, Yosuke, Komatsu, Katsuyoshi, Moriyama, Satoshi, Imura, Masataka, Sugiura, Shiori, Terashima, Taichi, Uji, Shinya, Watanabe, Kenji, Taniguchi, Takashi, Uchihashi, Takashi, Yamaguchi Takahide
Published in arXiv.org (03.12.2019)
Published in arXiv.org (03.12.2019)
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Journal Article
Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond
Yamaguchi Takahide, Sasama, Yosuke, Tanaka, Masashi, Takeya, Hiroyuki, Takano, Yoshihiko, Kageura, Taisuke, Kawarada, Hiroshi
Published in arXiv.org (17.05.2016)
Published in arXiv.org (17.05.2016)
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