The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers
Telegin, K.Yu, Ladugin, M.A., Andreev, A.Yu, Yarotskaya, I.V., Volkov, N.A., Padalitsa, A.A., Lobintsov, A.V., Aparnikov, A.N., Sapozhnikov, S.M., Marmalyuk, A.A.
Published in Quantum electronics (Woodbury, N.Y.) (01.05.2020)
Published in Quantum electronics (Woodbury, N.Y.) (01.05.2020)
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Quantum cascade laser based on As heteropair grown by MOCVD
Zasavitskii, I.I., Zubov, A.N., Andreev, A.Yu, Bagaev, T.A., Gorlachuk, P.V., Ladugin, M.A., Padalitsa, A.A., Lobintsov, A.V., Sapozhnikov, S.M., Marmalyuk, A.A.
Published in Quantum electronics (Woodbury, N.Y.) (01.05.2016)
Published in Quantum electronics (Woodbury, N.Y.) (01.05.2016)
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Triple integrated laser - thyristor
Bagaev, T.A., Ladugin, M.A., Padalitsa, A.A., Marmalyuk, A.A., Kurnyavko, Yu.V., Lobintsov, A.V., Danilov, A.I., Sapozhnikov, S.M., Krichevskii, V.V., Konyaev, V.P., Simakov, V.A., Slipchenko, S.O., Podoskin, A.A., Pikhtin, N.A.
Published in Quantum electronics (Woodbury, N.Y.) (01.11.2020)
Published in Quantum electronics (Woodbury, N.Y.) (01.11.2020)
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Double integrated laser-thyristor
Bagaev, T.A., Ladugin, M.A., Padalitsa, A.A., Marmalyuk, A.A., Kurnyavko, Yu.V., Lobintsov, A.V., Danilov, A.I., Sapozhnikov, S.M., Krichevskii, V.V., Zverkov, M.V., Konyaev, V.P., Simakov, V.A., Slipchenko, S.O., Podoskin, A.A., Pikhtin, N.A.
Published in Quantum electronics (Woodbury, N.Y.) (01.11.2019)
Published in Quantum electronics (Woodbury, N.Y.) (01.11.2019)
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Compact laser diode array based on epitaxially integrated AlGaAs/GaAs heterostructures
Ladugin, M.A., Bagaev, T.A., Marmalyuk, A.A., Koval', Yu.P., Konyaev, V.P., Sapozhnikov, S.M., Lobintsov, A.V., Simakov, V.A.
Published in Quantum electronics (Woodbury, N.Y.) (01.12.2018)
Published in Quantum electronics (Woodbury, N.Y.) (01.12.2018)
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AlGaInAs/InP semiconductor lasers with an increased electron barrier
Marmalyuk, A.A., Ivanov, A.V., Kurnosov, V.D., Kurnosov, K.V., Ladugin, M.A., Lobintsov, A.V., Padalitsa, A.A., Romantsevich, V.I., Ryaboshtan, Yu.L., Sapozhnikov, S.M., Svetogorov, V.N., Simakov, V.A.
Published in Quantum electronics (Woodbury, N.Y.) (01.06.2019)
Published in Quantum electronics (Woodbury, N.Y.) (01.06.2019)
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Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62
Ladugin, M.A., Marmalyuk, A.A., Padalitsa, A.A, Telegin, K.Yu, Lobintsov, A.V., Sapozhnikov, S.M., Danilov, A.I., Podkopaev, A.V., Simakov, V.A.
Published in Quantum electronics (Woodbury, N.Y.) (01.09.2017)
Published in Quantum electronics (Woodbury, N.Y.) (01.09.2017)
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Journal Article
Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70
Ladugin, M.A., Marmalyuk, A.A., Padalitsa, A.A., Bagaev, T.A., Andreev, A.Yu, Telegin, K.Yu, Lobintsov, A.V., Davydova, E.I., Sapozhnikov, S.M., Danilov, A.I., Podkopaev, A.V., Ivanova, E.B., Simakov, V.A.
Published in Quantum electronics (Woodbury, N.Y.) (01.05.2017)
Published in Quantum electronics (Woodbury, N.Y.) (01.05.2017)
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Metalorganic vapour phase epitaxy of GaAs/AlGaAs nanoheterostructures for a quantum cascade laser
Marmalyuk, A. A., Padalitsa, A. A., Ladugin, M. A., Gorlachuk, P. V., Yarotskaya, I. V., Andreev, A. Yu, Bagaev, T. A., Lobintsov, A. V., Kurnyavko, Yu. V., Sapozhnikov, S. M., Danilov, A. I., Telegin, K. Yu, Simakov, V. A., Zasavitskii, I. I., Zarubin, S. S.
Published in Inorganic materials (01.09.2017)
Published in Inorganic materials (01.09.2017)
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Optimal output mirror reflection coefficient for powerful InGaAs/AlGaAs laser diode arrays
Bogdanovich, M.V., Kabanov, V.V., Lebiadok, Y.V., Ryabtsev, A.G., Ryabtsev, G.I., Shchemelev, M.A., Kurlenkov, S.S., Sapozhnikov, S.M., Mehta, S.K.
Published in Optics and laser technology (01.02.2013)
Published in Optics and laser technology (01.02.2013)
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Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission
Konyaev, V. P., Marmalyuk, A. A., Ladugin, M. A., Bagaev, T. A., Zverkov, M. V., Krichevsky, V. V., Padalitsa, A. A., Sapozhnikov, S. M., Simakov, V. A.
Published in Semiconductors (Woodbury, N.Y.) (2014)
Published in Semiconductors (Woodbury, N.Y.) (2014)
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Journal Article
AlGaAs/GaAs laser diode bars with improved thermal stability
Marmalyuk, A.A., Ladugin, M.A., Andreev, A.Yu, Telegin, K.Yu, Yarotskaya, I.V., Meshkov, A.S., Konyaev, V.P., Sapozhnikov, S.M., Lebedeva, E.I., Simakov, V.A.
Published in Quantum electronics (Woodbury, N.Y.) (01.01.2013)
Published in Quantum electronics (Woodbury, N.Y.) (01.01.2013)
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Laser emitters (λ = 808 nm) based on AlGaAs/GaAs heterostructures
Marmalyuk, A. A., Andreev, A. Yu, Konyaev, V. P., Ladugin, M. A., Lebedeva, E. I., Meshkov, A. S., Morozyuk, A. N., Sapozhnikov, S. M., Danilov, A. I., Simakov, V. A., Telegin, K. Yu, Yarotskaya, I. V.
Published in Semiconductors (Woodbury, N.Y.) (2014)
Published in Semiconductors (Woodbury, N.Y.) (2014)
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Laser diodes with several emitting regions (λ = 800–1100 nm) on the basis of epitaxially integrated heterostructures
Marmalyuk, A. A., Davydova, E. I., Zverkov, M. V., Konyaev, V. P., Krichevsky, V. V., Ladugin, M. A., Lebedeva, E. I., Petrov, S. V., Sapozhnikov, S. M., Simakov, V. A., Uspenskiy, M. B., Yarotskaya, I. V., Pikhtin, N. A., Tarasov, I. S.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2011)
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PROCESS OF MANUFACTURE OF FIBRE-OPTICAL RECEIVING OR TRANSMITTING MODULE
SHVEJKIN V.I, SAPOZHNIKOV S.M, BESSONOVA S.V, KURLENKOV S.S, KURNYAVKO YU.V
Year of Publication 27.08.1995
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Year of Publication 27.08.1995
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MOUNTING PLATE OF LASER DIODE
BELANOVSKIJ E.A, BORODKIN A.A, SAPOZHNIKOV S.M, KOBJAKOVA M.SH, KOVAL' JU.P, MOROZJUK A.M, LOBINTSOV A.V
Year of Publication 10.08.1999
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Year of Publication 10.08.1999
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Investigation of mechanisms of multimode emission from double-heterostructure AlGaAs injection lasers with narrow stripe contacts
Bessonov, Yu L, Kurlenkov, S S, Morozov, V N, Sapozhnikov, S M, Thai, Chan M, Shidlovskiĭ, V R
Published in Soviet journal of quantum electronics (28.02.1985)
Published in Soviet journal of quantum electronics (28.02.1985)
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Influence of spectral width on power fluctuations of injection lasers
Bessonov, Yu L, Kurlenkov, S S, Morozov, V N, Sapozhnikov, S M, Thai, Chan M, Shidlovskiĭ, V P
Published in Soviet journal of quantum electronics (28.02.1985)
Published in Soviet journal of quantum electronics (28.02.1985)
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Investigation of a two-component injection heterojunction laser
Goldobin, I S, Kurnosov, V D, Luk'yanov, V N, Semenov, A T, Sapozhnikov, S M, Shelkov, N V, Yakubovich, S D
Published in Soviet journal of quantum electronics (30.11.1980)
Published in Soviet journal of quantum electronics (30.11.1980)
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METHOD FOR ASSEMBLING LASER DIODES AND OTHER OPTOELECTRONIC AND ELECTRONIC ELEMENTS
BELANOVSKIJ E.A, SAPOZHNIKOV S.M, KONJAEV V.P, OS'KIN V.V, POLJAKOV E.V, BESSONOV JU.L, SINITSYNA N.V
Year of Publication 10.08.1996
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Year of Publication 10.08.1996
Patent