Limiting factors of GaN-on-GaN LED
Samsudin, M E A, Alias, E A, Md Taib, M Ikram, Li, H, Iza, M, Denbaars, S P, Nakamura, S, Zainal, N
Published in Semiconductor science and technology (01.09.2021)
Published in Semiconductor science and technology (01.09.2021)
Get full text
Journal Article
Processing and characterization of a free-standing bulk polycrystalline GaN layer
Samsudin, M.E.A., Taib, M. Ikram Md, Alias, E., Waheeda, S.N., Ariff, A., Ahmad, M.A., Zainal, N.
Published in Journal of alloys and compounds (15.11.2018)
Published in Journal of alloys and compounds (15.11.2018)
Get full text
Journal Article
Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate
Ikram Md Taib, M, Samsudin, M E A, Alias, E A, Waheeda, S N, Ibrahim, N, Shuhaimi, A, Zainal, N
Published in Materials research express (10.05.2019)
Published in Materials research express (10.05.2019)
Get full text
Journal Article
Improving polycrystalline GaN by controlling annealing temperature of ScN interlayer
Alvin, Y S M, Samsudin, M E A, Md Taib, M Ikram, Hassan, Z, Zainal, N
Published in Materials research express (13.03.2019)
Published in Materials research express (13.03.2019)
Get full text
Journal Article
High quality aluminum nitride layer grown with a combined step of nitridation and trimethylaluminum preflow
Yusuf, Y., Samsudin, M.E.A., Md. Sahar, M.A.A.Z., Hassan, Z., Maryam, W., Zainal, N.
Published in Thin solid films (31.10.2021)
Published in Thin solid films (31.10.2021)
Get full text
Journal Article
Controlled nucleation time for improving aluminum nitride growth
Samsudin, M.E.A., Yusuf, Y., Ahmad, M.A., Zainal, N.
Published in Materials science in semiconductor processing (01.10.2021)
Published in Materials science in semiconductor processing (01.10.2021)
Get full text
Journal Article
Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology
Azman, Adreen, Shuhaimi, Ahmad, Omar, Al-Zuhairi, Kamarundzaman, Anas, Khudus, Muhammad Imran Mustafa Abdul, Ariff, Azharul, Samsudin, M.E.A., Zainal, Norzaini, Rahman, Saadah Abd
Published in Thin solid films (01.12.2018)
Published in Thin solid films (01.12.2018)
Get full text
Journal Article
Freestanding patterned polycrystalline GaN substrate by a straightforward and affordable technique
Zainal, N., Samsudin, M.E.A., Taib, Muhamad Ikram Md, Ahmad, M.A., Ariff, A., Alwadai, N., Roqan, I.S.
Published in Materials science in semiconductor processing (01.12.2018)
Published in Materials science in semiconductor processing (01.12.2018)
Get full text
Journal Article
Comparison between standing transparent mirrorless packaging and planar-mounted packaging for GaN-on-GaN LEDs
Alias, E A, Samsudin, M E A, Zainal, N, Iza, M, Alhassan, A I, DenBaars, S P, Speck, J S, Nakamura, S
Published in Journal of physics. Conference series (01.05.2020)
Published in Journal of physics. Conference series (01.05.2020)
Get full text
Journal Article
Controlled porosity of GaN using different pore size of Si (100) substrates
Samsudin, M.E.A., Zainal, N., Hassan, Z.
Published in Superlattices and microstructures (01.09.2014)
Published in Superlattices and microstructures (01.09.2014)
Get full text
Journal Article
To develop porous Si as substrate for better quality GaN layer
Zainal, N., Radzali, R., Samsudin, M. E. A., Taib, M. I. M., Ramizy, A., Hassan, Z.
Published in 2012 International Conference on Enabling Science and Nanotechnology (01.01.2012)
Published in 2012 International Conference on Enabling Science and Nanotechnology (01.01.2012)
Get full text
Conference Proceeding