Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime
Jazaeri, F., Barbut, L., Koukab, A., Sallese, J.-M.
Published in Solid-state electronics (01.04.2013)
Published in Solid-state electronics (01.04.2013)
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Journal Article
Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID
Termo, G., Borghello, G., Faccio, F., Michelis, S., Koukab, A., Sallese, J.-M.
Published in Journal of instrumentation (01.01.2023)
Published in Journal of instrumentation (01.01.2023)
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Journal Article
Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor
Yesayan, A., Petrosyan, S., Papiyan, A., Sallese, J.-M.
Published in Journal of contemporary physics (01.10.2021)
Published in Journal of contemporary physics (01.10.2021)
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Journal Article
Role of the gate in ballistic nanowire SOI MOSFETs
Mangla, A., Sallese, J.-M., Sampedro, C., Gamiz, F., Enz, C.
Published in Solid-state electronics (01.10.2015)
Published in Solid-state electronics (01.10.2015)
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Journal Article
Design and modeling of self-aligned nano-imprinted sub-micrometer pentacene-based organic thin-film transistors
Zanella, F., Marjanović, N., Ferrini, R., Gold, H., Haase, A., Fian, A., Stadlober, B., Müller, R., Genoe, J., Hirshy, H., Drost, A., König, M., Lee, K.-D., Ring, J., Prétôt, R., Enz, C.C., Sallese, J.-M.
Published in Organic electronics (01.11.2013)
Published in Organic electronics (01.11.2013)
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Journal Article
Transient current technique for charged traps detection in silicon bonded interfaces
Bronuzzi, J., Bouvet, D., Charrier, C., Fournel, F., García, M. F., Mapelli, A., Moll, M., Rouchouze, E., Sallese, J. M.
Published in AIP advances (01.02.2019)
Published in AIP advances (01.02.2019)
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Journal Article
Principle of the electrically induced Transient Current Technique
Bronuzzi, J., Moll, M., Bouvet, D., Mapelli, A., Sallese, J.M.
Published in Journal of instrumentation (18.05.2018)
Published in Journal of instrumentation (18.05.2018)
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Journal Article
A capacitor-less 1T-DRAM cell
Okhonin, S., Nagoga, M., Sallese, J.M., Fazan, P.
Published in IEEE electron device letters (01.02.2002)
Published in IEEE electron device letters (01.02.2002)
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Journal Article
Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications
Termo, G., Borghello, G., Faccio, F., Michelis, S., Koukab, A., Sallese, J.M.
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01.08.2024)
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (01.08.2024)
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Journal Article
Explicit Compact Model for Ultranarrow Body FinFETs
Mingchun Tang, Pregaldiny, F., Lallement, C., Sallese, J.-M.
Published in IEEE transactions on electron devices (01.07.2009)
Published in IEEE transactions on electron devices (01.07.2009)
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Journal Article
Noise modeling methodologies in the presence of mobility degradation and their equivalence
Roy, A.S., Enz, C.C., Sallese, J.-M.
Published in IEEE transactions on electron devices (01.02.2006)
Published in IEEE transactions on electron devices (01.02.2006)
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Journal Article
Noise Modeling in Lateral Nonuniform MOSFET
Roy, A.S., Enz, C.C., Sallese, J.-M.
Published in IEEE transactions on electron devices (01.08.2007)
Published in IEEE transactions on electron devices (01.08.2007)
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Journal Article
A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET
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Journal Article
Conference Proceeding
New architecture for the analog front-end of Medipix4
Sriskaran, V., Alozy, J., Ballabriga, R., Campbell, M., Egidos, N., Fernandez-Tenllado, J.M., Heijne, E., Kremastiotis, I., Koukab, A., Llopart, X., Sallese, J.M., Tlustos, L.
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21.10.2020)
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21.10.2020)
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Journal Article
A compact non-quasi-static extension of a charge-based MOS model
Porret, A.-S., Sallese, J.-M., Enz, C.C.
Published in IEEE transactions on electron devices (01.08.2001)
Published in IEEE transactions on electron devices (01.08.2001)
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Journal Article