Phase-change random access memory: A scalable technology
Raoux, S., Burr, G. W., Breitwisch, M. J., Rettner, C. T., Chen, Y.-C., Shelby, R. M., Salinga, M., Krebs, D., Chen, S.-H., Lung, H.-L., Lam, C. H.
Published in IBM journal of research and development (01.07.2008)
Published in IBM journal of research and development (01.07.2008)
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Analysis of Transient Currents During Ultrafast Switching of \hbox Nanocrossbar Devices
Hermes, C., Wimmer, M., Menzel, S., Fleck, K., Bruns, G., Salinga, M., Bottger, U., Bruchhaus, R., Schmitz-Kempen, T., Wuttig, M., Waser, R.
Published in IEEE electron device letters (01.08.2011)
Published in IEEE electron device letters (01.08.2011)
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Phase change materials and their application to random access memory technology
Raoux, Simone, Shelby, Robert M., Jordan-Sweet, Jean, Munoz, Becky, Salinga, Martin, Chen, Yi-Chou, Shih, Yen-Hao, Lai, Erh-Kun, Lee, Ming-Hsiu
Published in Microelectronic engineering (01.12.2008)
Published in Microelectronic engineering (01.12.2008)
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Conference Proceeding
Ultra-Thin Phase-Change Bridge Memory Device Using GeSb
Chen, Y.C., Rettner, C.T., Raoux, S., Burr, G.W., Chen, S.H., Shelby, R.M., Salinga, M., Risk, W.P., Happ, T.D., McClelland, G.M., Breitwisch, M., Schrott, A., Philipp, J.B., Lee, M.H., Cheek, R., Nirschl, T., Lamorey, M., Chen, C.F., Joseph, E., Zaidi, S., Yee, B., Lung, H.L., Bergmann, R., Lam, C.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Conference Proceeding
Analysis of Transient Currents During Ultrafast Switching of hbox TiO 2 Nanocrossbar Devices
Hermes, C, Wimmer, M, Menzel, S, Fleck, K, Bruns, G, Salinga, M, Bottger, U, Bruchhaus, R, Schmitz-Kempen, T, Wuttig, M, Waser, R
Published in IEEE electron device letters (01.08.2011)
Published in IEEE electron device letters (01.08.2011)
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Journal Article
Analysis of Transient Currents During Ultrafast Switching of [Formula Omitted] Nanocrossbar Devices
Hermes, C, Wimmer, M, Menzel, S, Fleck, K, Bruns, G, Salinga, M, Bottger, U, Bruchhaus, R, Schmitz-Kempen, T, Wuttig, M, Waser, R
Published in IEEE electron device letters (01.08.2011)
Published in IEEE electron device letters (01.08.2011)
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Journal Article
Analysis of Transient Currents During Ultrafast Switching of Ti02 Nanocrossbar Devices
HERMES, C, WIMMER, M, WASER, R, MENZEL, S, FLECK, K, BRUNS, G, SALINGA, M, BÖTTGER, U, BRUCHHAUS, R, SCHMITZ-KEMPEN, T, WUTTIG, M
Published in IEEE electron device letters (2011)
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Published in IEEE electron device letters (2011)
Journal Article
Phase-change random access memory : A scalable technology: Storages technologies and systems
RAOUX, S, BURR, G. W, LAM, C. H, BREITWISCH, M. J, RETTNER, C. T, CHEN, Y.-C, SHELBY, R. M, SALINGA, M, KREBS, D, CHEN, S.-H, LUNG, H.-L
Published in IBM journal of research and development (2008)
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Published in IBM journal of research and development (2008)
Journal Article
Fast pulse analysis of TiO2 based RRAM nano-crossbar devices
Hermes, C., Lentz, F., Waser, R., Bruchhaus, R., Menzel, S., Fleck, K., Bottger, U., Wimmer, M., Salinga, M., Wuttig, M.
Published in 2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding (01.11.2011)
Published in 2011 11th Annual Non-Volatile Memory Technology Symposium Proceeding (01.11.2011)
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Conference Proceeding