Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation
Hayashi, Shohei, Fujita, Yuji, Kamikura, Takahiro, Sakaike, Kohei, Akazawa, Muneki, Ikeda, Mitsuhisa, Hanafusa, Hiroaki, Higashi, Seiichiro
Published in Applied physics letters (22.10.2012)
Published in Applied physics letters (22.10.2012)
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Fabrication of N-channel single crystalline silicon (100) thin-film transistors on glass substrate by meniscus force-mediated layer transfer technique
Akazawa, Muneki, Sakaike, Kohei, Nakamura, Shogo, Higashi, Seiichiro
Published in Japanese Journal of Applied Physics (01.10.2014)
Published in Japanese Journal of Applied Physics (01.10.2014)
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Investigation of silicon grain structure and electrical characteristics of TFTs fabricated using different crystallized silicon films by atmospheric pressure micro-thermal-plasma-jet irradiation
Hayashi, Shohei, Morisaki, Seiji, Kamikura, Takahiro, Yamamoto, Shogo, Sakaike, Kohei, Akazawa, Muneki, Higashi, Seiichiro
Published in Japanese Journal of Applied Physics (01.03.2014)
Published in Japanese Journal of Applied Physics (01.03.2014)
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Leading Wave Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation of Amorphous Silicon Films
Hayashi, Shohei, Fujita, Yuji, Kamikura, Takahiro, Sakaike, Kohei, Akazawa, Muneki, Ikeda, Mitsuhisa, Higashi, Seiichiro
Published in Japanese Journal of Applied Physics (01.05.2013)
Published in Japanese Journal of Applied Physics (01.05.2013)
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Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates
Sakaike, Kohei, Akazawa, Muneki, Nakagawa, Akitoshi, Higashi, Seiichiro
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
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A technique for local area transfer and simultaneous crystallization of amorphous silicon layer with midair cavity by irradiation with near-infrared semiconductor diode laser
Sakaike, Kohei, Kobayashi, Yoshitaka, Nakamura, Shogo, Akazawa, Muneki, Higashi, Seiichiro
Published in Japanese Journal of Applied Physics (01.04.2014)
Published in Japanese Journal of Applied Physics (01.04.2014)
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Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabrication
Sakaike, Kohei, Kobayashi, Yoshitaka, Nakamura, Shogo, Hayashi, Shohei, Akazawa, Muneki, Morisaki, Seiji, Ikeda, Mitsuhisa, Higashi, Seiichiro
Published in Japanese Journal of Applied Physics (01.05.2013)
Published in Japanese Journal of Applied Physics (01.05.2013)
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Grain Growth Control during Micro-Thermal-Plasma-Jet Irradiation Using Amorphous Si Strips and Slit Masks
Fujita, Yuji, Hayashi, Shohei, Sakaike, Kohei, Higashi, Seiichiro
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Layer Transfer and Simultaneous Crystallization of Amorphous Si Films with Mid-Air Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation
Sakaike, Kohei, Kobayashi, Yoshitaka, Nakamura, Shogo, Akazawa, Muneki, Ikeda, Mitsuhisa, Higashi, Seiichiro
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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