High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer
Muhammed, M M, Roldan, M A, Yamashita, Y, Sahonta, S-L, Ajia, I A, Iizuka, K, Kuramata, A, Humphreys, C J, Roqan, I S
Published in Scientific reports (14.07.2016)
Published in Scientific reports (14.07.2016)
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Journal Article
Mg doping affects dislocation core structures in GaN
Rhode, S K, Horton, M K, Kappers, M J, Zhang, S, Humphreys, C J, Dusane, R O, Sahonta, S -L, Moram, M A
Published in Physical review letters (09.07.2013)
Published in Physical review letters (09.07.2013)
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Journal Article
Structure and strain relaxation effects of defects in InxGa1−xN epilayers
Rhode, S L, Fu, W Y, C-P, Massabuau F, Kappers, M J, McAleese, C, Oehler, F, Humphreys, C J, Dusane, R O, Sahonta S–L
Published in Journal of applied physics (14.09.2014)
Published in Journal of applied physics (14.09.2014)
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Journal Article
Dislocation core structures in (0001) InGaN
Rhode, S. L., Horton, M. K., Sahonta, S.-L., Kappers, M. J., Haigh, S. J., Pennycook, T. J., McAleese, C., Humphreys, C. J., Dusane, R. O., Moram, M. A.
Published in Journal of applied physics (14.03.2016)
Published in Journal of applied physics (14.03.2016)
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Journal Article
SCM and SIMS investigations of unintentional doping in III-nitrides
Kappers, M. J., Zhu, T., Sahonta, S.-L., Humphreys, C. J., Oliver, R. A.
Published in Physica status solidi. C (01.04.2015)
Published in Physica status solidi. C (01.04.2015)
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Journal Article
Structural and Dielectric Properties of SnTiO3, a Putative Ferroelectric
Fix, Thomas, Sahonta, S.-Lata, Garcia, Vincent, MacManus-Driscoll, Judith L, Blamire, Mark G
Published in Crystal growth & design (04.05.2011)
Published in Crystal growth & design (04.05.2011)
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Journal Article
Properties of GaN nanowires with ScxGa1−xN insertion
Bao, A., Goff, L. E., Zhu, T., Sahonta, S.‐L., Ritchie, D. A., Joyce, H. J., Moram, M. A., Oliver, R. A.
Published in physica status solidi (b) (01.08.2017)
Published in physica status solidi (b) (01.08.2017)
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Journal Article
Rapid open-air deposition of uniform, nanoscale, functional coatings on nanorod arrays
Musselman, K P, Muñoz-Rojas, D, Hoye, R L Z, Sun, H, Sahonta, S-L, Croft, E, Böhm, M L, Ducati, C, MacManus-Driscoll, J L
Published in Nanoscale horizons (01.03.2017)
Published in Nanoscale horizons (01.03.2017)
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Journal Article
Photoluminescence studies of cubic GaN epilayers
Church, S. A., Hammersley, S., Mitchell, P. W., Kappers, M. J., Sahonta, S. L., Frentrup, M., Nilsson, D., Ward, P. J., Shaw, L. J., Wallis, D. J., Humphreys, C. J., Oliver, R. A., Binks, D. J., Dawson, P.
Published in physica status solidi (b) (01.08.2017)
Published in physica status solidi (b) (01.08.2017)
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Journal Article
n-Type conductivity bound by the growth temperature: the case of Al0.72Ga0.28N highly doped by silicon
Kakanakova-Georgieva, A, Sahonta, S.-L, Nilsson, D, Trinh, X. T, Son, N. T, Janzén, E, Humphreys, C. J
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (01.01.2016)
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (01.01.2016)
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Journal Article
High-efficiency InGaN/GaN quantum well structures on large area silicon substrates
Zhu, D., McAleese, C., Häberlen, M., Kappers, M. J., Hylton, N., Dawson, P., Radtke, G., Couillard, M., Botton, G. A., Sahonta, S.-L., Humphreys, C. J.
Published in Physica status solidi. A, Applications and materials science (01.01.2012)
Published in Physica status solidi. A, Applications and materials science (01.01.2012)
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Journal Article
Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE
Adikimenakis, A., Sahonta, S.-L., Dimitrakopulos, G.P., Domagala, J., Kehagias, Th, Komninou, Ph, Iliopoulos, E., Georgakilas, A.
Published in Journal of crystal growth (15.03.2009)
Published in Journal of crystal growth (15.03.2009)
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Conference Proceeding
Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy
Dimitrakopulos, G. P., Komninou, Ph, Kehagias, Th, Sahonta, S.-L., Kioseoglou, J., Vouroutzis, N., Hausler, I., Neumann, W., Iliopoulos, E., Georgakilas, A., Karakostas, Th
Published in Physica status solidi. A, Applications and materials science (01.11.2008)
Published in Physica status solidi. A, Applications and materials science (01.11.2008)
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Journal Article
A dissociation mechanism for the [a+c] dislocation in GaN
Nellist, P D, Hirsch, P B, Rhode, S, Horton, M K, Lozano, J G, Yasuhara, A, Okunishi, E, Zhang, S, Sahonta, S-L, Kappers, M J, Humphreys, C J, Moram, M A
Published in Journal of physics. Conference series (11.06.2014)
Published in Journal of physics. Conference series (11.06.2014)
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Journal Article
Structural properties of ultrathin InGaN/GaN quantum wells
Sahonta, S.-L., Komninou, Ph, Dimitrakopulos, G. P., Salcianu, C., Thrush, E. J., Karakostas, Th
Published in Physica status solidi. A, Applications and materials science (01.11.2008)
Published in Physica status solidi. A, Applications and materials science (01.11.2008)
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Journal Article
Conference Proceeding