Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0·7Sr0·3TiO3 thin film capacitors
Baniecki, J.D., Laibowitz, R.B., Shaw, T.M., Saenger, K.L., Duncombe, P.R., Cabral, C., Kotecki, D.E., Shen, H., Lian, J., Ma, Q.Y.
Published in Journal of the European Ceramic Society (01.06.1999)
Published in Journal of the European Ceramic Society (01.06.1999)
Get full text
Journal Article
Improved DC and RF performance in Si/SiGe n-MODFETs with ion-implanted buried p-well doping
Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Canaperi, D.F., Tornello, J.A., Jahnes, C.V.
Published in IEEE electron device letters (01.11.2005)
Published in IEEE electron device letters (01.11.2005)
Get full text
Journal Article
80 nm gate-length Si∕Si0.7Ge0.3 n-MODFET with 194 GHz fmax
Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Rooks, M.J., Canaperi, D.F., Tornello, J.A., Jahnes, C.V., Steen, S.E.
Published in Electronics letters (13.11.2003)
Published in Electronics letters (13.11.2003)
Get full text
Journal Article
Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax > 200 GHz and low operating bias
KOESTER, S. J, SAENGER, K. L, CHU, J. O, OUYANG, Q. C, OTT, J. A, JENKINS, K. A, CANAPERI, D. F, TORNELLO, J. A, JAHNES, C. V, STEEN, S. E
Published in IEEE electron device letters (01.03.2005)
Published in IEEE electron device letters (01.03.2005)
Get full text
Journal Article
Laterally scaled Si-Si/sub 0.7/Ge/sub 0.3/ n-MODFETs with f/sub max/>200 GHz and low operating bias
Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Jenkins, K.A., Canaperi, D.F., Tornello, J.A., Jahnes, C.V., Steen, S.E.
Published in IEEE electron device letters (01.03.2005)
Published in IEEE electron device letters (01.03.2005)
Get full text
Journal Article
Static frequency divider circuit using 0.15 [micro sign]m gate length Si0.2Ge0.8∕Si0.7Ge0.3 p-MODFETs
Singh, D.V., Koester, S.J., Chu, J.O., Jenkins, K.A., Mooney, P.M., Ouyang, Q.C., Ruiz, N., Ott, J.A., Ralston, D., Wetzel, M., Asbeck, P.M., Saenger, K.L., Patel, V.V., Grill, A.
Published in Electronics letters (2003)
Published in Electronics letters (2003)
Get full text
Journal Article
Scalability of Direct Silicon Bonded (DSB) Technology for 32nm Node and Beyond
Yin, Haizhou, Wallner, T.A., Li, J., Ott, J.A., Chen, X., Luo, Z.J., Rovedo, N., Fogel, K., Pfeiffer, G., Kleinhenz, R., Bendernagel, R., Sung, C.Y., Sadana, D.K., Takayanagi, M., Ishimaru, K., Crowder, S.W., Park, D., Khare, M., Shahidi, G., Saenger, K.L., Hamaguchi, M., Hasumi, R., Ohuchi, K., Ng, H., Zhang, R., Stein, K.J.
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
Get full text
Conference Proceeding
Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)
Hamaguchi, M., Yin, H., Saenger, K.L., Sung, C.Y., Hasumi, R., Iijima, R., Ohuchi, K., Takasu, Y., Ott, J.A., Kang, H., Biscardi, M., Li, J., Domenicucci, A.G., Zhu, Z., Ronsheim, P., Zhang, R., Rovedo, N., Utomo, H., Fogel, K., de Souza, J.P., Sadana, D.K., Takayanagi, M., Park, D., Shahidi, G., Ishimaru, K.
Published in 2008 Symposium on VLSI Technology (01.06.2008)
Published in 2008 Symposium on VLSI Technology (01.06.2008)
Get full text
Conference Proceeding
Effects of annealing conditions on charge loss mechanisms in MOCVD Ba 0·7Sr 0·3TiO 3 thin film capacitors
Baniecki, J.D., Laibowitz, R.B., Shaw, T.M., Saenger, K.L., Duncombe, P.R., Cabral, C., Kotecki, D.E., Shen, H., Lian, J., Ma, Q.Y.
Published in Journal of the European Ceramic Society (1999)
Published in Journal of the European Ceramic Society (1999)
Get full text
Journal Article
Laterally-scaled Si/SiGe n-MODFETs with in situ and ion-implanted p-well doping
Koester, S.J., Saenger, K.L., Chu, J.O., Ouyang, Q.C., Ott, J.A., Canaperi, D.F., Tornello, J.A., Jahnes, C.V., Steen, S.E.
Published in Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC (2004)
Published in Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC (2004)
Get full text
Conference Proceeding
Effect of End-of-Range Defects on Device Leakage in Direct Silicon Bonded (DSB) Technology
Haizhou Yin, Hamaguchi, M., Saenger, K.L., Sung, C.Y., Hasumi, R., Ohuchi, K., Zhang, R., Cai, J., Ott, J.A., Chen, X., Luo, Z.J., Rovedo, N., Fogel, K., Pfeiffer, G., Kleinhenz, R., Sadana, D.K., Takayanagi, M., Ishimaru, K., Ning, T.H., Park, D.-G., Shahidi, G.
Published in 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (01.04.2008)
Published in 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (01.04.2008)
Get full text
Conference Proceeding
Direct Silicon Bonded (DSB) Substrate Solid Phase Epitaxy (SPE) Integration Scheme Study for High Performance Bulk CMOS
Haizhou Yin, Sung, C.Y., Ng, H., Saenger, K.L., Chan, V., Crowder, S., Zhang, R., Li, J., Ott, J.A., Pfeiffer, G., Bendernagel, R., Ko, S.B., Ren, Z., Chen, X., Wang, G., Liu, J., Cheng, K., Mesfin, A., Kelly, R., Ku, V., Luo, Z.J., Rovedo, N., Fogel, K., Sadana, D.K., Khare, M., Shahidi, G.
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
Get full text
Conference Proceeding
Uniaxial strain relaxation on ultra-thin strained-Si directly on insulator (SSDOI) substrates
Haizhou Yin, Ren, Z., Saenger, K.L., Hovel, H.J., de Souza, J.P., Ott, J.A., Zhang, R., Bedell, S.W., Pfeiffer, G., Bendernagel, R., Chan, V., Sadana, D.K., Sung, C.Y., Khare, M., Ieong, M., Shahidi, G.
Published in 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (01.10.2006)
Published in 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings (01.10.2006)
Get full text
Conference Proceeding
High performance cmos bulk technology using direct silicon bond (dsb) mixed crystal orientation substrates
Chun-Yung Sung, Haizhou Yin, Ng, H.Y., Saenger, K.L., Chan, V., Crowder, S.W., Jinghong Li, Ott, J.A., Bendernagel, R., Kempisty, J.J., Ku, V., Lee, H.K., Zhijiong Luo, Madan, A., Mo, R.T., Nguyen, P.Y., Pfeiffer, G., Raccioppo, M., Rovedo, N., Sadana, D., de Souza, J.P., Rong Zhang, Zhibin Ren, Wann, C.H.
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
Published in IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest (2005)
Get full text
Conference Proceeding
Implications of gate design on RF performance of sub-100 nm strained-Si/SiGe nMODFETs
Ouyang, Q., Koester, S.J., Chu, J.O., Saenger, K.L., Ott, J.A., Jenkins, K.A.
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)
Published in International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003 (2003)
Get full text
Conference Proceeding
Electromechanical conversion efficiency of PZT films
Etzold, K.F., Roy, R.A., Saenger, K.L., Cuomo, J.J.
Published in IEEE Symposium on Ultrasonics (1990)
Published in IEEE Symposium on Ultrasonics (1990)
Get full text
Conference Proceeding