New Highly Reliable Optical Transmitting Modules Based on High-Power Superluminescent Diodes in the Spectral Range of 1.5–1.6 μm
Sabitov, D. R., Svetogorov, V. N., Ryaboshtan, Yu. L., Ladugin, M. A., Marmalyuk, A. A., Vasil’ev, M. G., Vasil’ev, A. M., Kostin, Yu. O., Shelyakin, A. A.
Published in Bulletin of the Lebedev Physics Institute (01.12.2023)
Published in Bulletin of the Lebedev Physics Institute (01.12.2023)
Get full text
Journal Article
Photoreversible Current in InGaN/GaN-Based LED Heterostructures with Different Numbers of QWs
Aslanyan, A. E., Avakyants, L. P., Chervyakov, A. V., Turkin, A. N., Kureshov, V. A., Sabitov, D. R., Marmalyuk, A. A.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2020)
Get full text
Journal Article
Investigation into the Internal Electric-Field Strength in the Active Region of InGaN/GaN-Based LED Structures with Various Numbers of Quantum Wells by Electrotransmission Spectroscopy
Aslanyan, A. E., Avakyants, L. P., Chervyakov, A. V., Turkin, A. N., Mirzai, S. S., Kureshov, V. A., Sabitov, D. R., Marmalyuk, A. A.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2020)
Get full text
Journal Article
Superluminescent diodes in the spectral range of 1.5 - 1.6 μm based on strain-compensated AlGaInAs/InP quantum wells
Sabitov, D.R., Ryaboshtan, Yu.L., Svetogorov, V.N., Padalitsa, A.A., Ladugin, M.A., Marmalyuk, A.A., Vasil'ev, M.G., Vasil'ev, A.M., Kostin, Yu.O., Shelyakin, A.A.
Published in Quantum electronics (Woodbury, N.Y.) (01.09.2020)
Published in Quantum electronics (Woodbury, N.Y.) (01.09.2020)
Get full text
Journal Article
Compact superluminescent AlGaInAs/InP strain-compensated quantum-well diodes for fibre-optic gyroscopes
Sabitov, D.R., Svetogorov, V.N., Ryaboshtan, Yu.L., Ladugin, M.A., Marmalyuk, A.A., Vasil’ev, M.G., Vasil’ev, A.M., Kostin, Yu.O., Shelyakin, A.A.
Published in Quantum electronics (Woodbury, N.Y.) (01.06.2022)
Published in Quantum electronics (Woodbury, N.Y.) (01.06.2022)
Get full text
Journal Article
Improvement of the current – voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940 – 980 nm)
Volkov, N.A., Telegin, K.Yu, Gultikov, N.V., Sabitov, D.R., Andreev, A.Yu, Yarotskaya, I.V., Padalitsa, A.A., Ladugin, M.A., Marmalyuk, A.A., Shestak, L.I., Kozyrev, A.A., Panarin, V.A.
Published in Quantum electronics (Woodbury, N.Y.) (01.02.2022)
Published in Quantum electronics (Woodbury, N.Y.) (01.02.2022)
Get full text
Journal Article
InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900−920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics
Volkov, N.A., Bagaev, T.A., Sabitov, D.R., Andreev, A.Yu, Yarotskaya, I.V., Padalitsa, A.A., Ladugin, M.A., Marmalyuk, A.A., Bakhvalov, K.V., Veselov, D.A., Lyutetskii, A.V., Rudova, N.A., Strelets, V.A., Slipchenko, S.O., Pikhtin, N.A.
Published in Quantum electronics (Woodbury, N.Y.) (01.10.2021)
Published in Quantum electronics (Woodbury, N.Y.) (01.10.2021)
Get full text
Journal Article
Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes
Duraev, V P, Marmalyuk, A A, Padalitsa, A A, Petrovskii, A V, Sabitov, D R, Sumarokov, M A, Sukharev, A V
Published in Quantum electronics (Woodbury, N.Y.) (28.02.2008)
Published in Quantum electronics (Woodbury, N.Y.) (28.02.2008)
Get full text
Journal Article
Change in the Properties of AlGaN/InGaN/GaN Structures during the Operation of Electron-Beam-Pumped and Optically Pumped Pulse-Periodic Lasers Based on Them
Zverev, M. M., Gamov, N. A., Gladyshev, N. I., Zhdanova, E. V., Loktionov, D. E., Studionov, V. B., Kureshov, V. A., Mazalov, A. V., Sabitov, D. R., Padalitsa, A. A., Marmalyuk, A. A., Kozlovsky, V. I., Mituhliaev, V. B.
Published in Surface investigation, x-ray, synchrotron and neutron techniques (2019)
Published in Surface investigation, x-ray, synchrotron and neutron techniques (2019)
Get full text
Journal Article
Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure
Gamov, N.A., Zhdanova, E.V., Zverev, M.M., Peregoudov, D.V., Studenov, V.B., Mazalov, A.V., Kureshov, V.A., Sabitov, D.R., Padalitsa, A.A., Marmalyuk, A.A.
Published in Quantum electronics (Woodbury, N.Y.) (01.01.2015)
Published in Quantum electronics (Woodbury, N.Y.) (01.01.2015)
Get full text
Journal Article
Effect of growth temperature of GaN:Mg layer on internal quantum efficiency of LED structures with InGaN/GaN quantum wells
Romanov, I S, Prudaev, I A, Kopyev, V V, Marmalyuk, A A, Kureshov, V A, Sabitov, D R, Mazalov, A V
Published in Journal of physics. Conference series (01.01.2014)
Published in Journal of physics. Conference series (01.01.2014)
Get full text
Journal Article
Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping
Prudaev, I. A., Romanov, I. S., Kopyev, V. V., Brudnyi, V. N., Marmalyuk, A. A., Kureshov, V. A., Sabitov, D. R., Mazalov, A. V.
Published in Russian physics journal (01.11.2016)
Published in Russian physics journal (01.11.2016)
Get full text
Journal Article
Broadband near-IR double quantum-well heterostructure superluminescent diodes
Andreeva, E V, Volkov, N A, Kostin, Yu O, Lapin, P I, Marmalyuk, A A, Sabitov, D R, Yakubovich, S D
Published in Quantum electronics (Woodbury, N.Y.) (31.08.2008)
Published in Quantum electronics (Woodbury, N.Y.) (31.08.2008)
Get full text
Journal Article
Influence of conditions of growth on the structural perfection of AlN layers obtained by the MOS-hydride Epitaxy Method
Mazalov, A. V., Sabitov, D. R., Kureshov, V. A., Padalitsa, A. A., Marmalyuk, A. A., Akchurin, R. Kh
Published in Russian microelectronics (01.12.2014)
Published in Russian microelectronics (01.12.2014)
Get full text
Journal Article
Effect of the Barrier Thickness on the Optical Properties of InGaN/GaN/Al2O3 (0001) LED Heterostructures
Romanov, I. S., Prudaev, I. A., Brudnyi, V. N., Kopyev, V. V., Novikov, Vad. A., Marmalyuk, A. A., Kureshov, V. A., Sabitov, D. R., Mazalov, A. V.
Published in Russian physics journal (01.11.2015)
Published in Russian physics journal (01.11.2015)
Get full text
Journal Article
Effect of Magnesium Diffusion Into the Active Region of LED Structures with InGaN/GaN Quantum Wells on Internal Quantum Efficiency
Romanov, I. S., Prudaev, I. A., Marmalyuk, А. А., Kureshov, V. A., Sabitov, D. R., Маzalov, А. V.
Published in Russian physics journal (01.08.2014)
Published in Russian physics journal (01.08.2014)
Get full text
Journal Article
Led InGaN/GaN Structures with Short-Period Superlattice Grown on Flat and Patterned Sapphire Substrates
Romanov, I. S., Prudaev, I. A., Brudnyi, V. N., Kop’ev, V. V., Novikov, Vad. A., Маrmalyuk, А. А., Кureshov, V. А., Sabitov, D. R., Маzalov, А. V.
Published in Russian physics journal (01.03.2015)
Published in Russian physics journal (01.03.2015)
Get full text
Journal Article
High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement
Andreev, A. Yu, Zorina, S. A., Leshko, A. Yu, Lyutetskiy, A. V., Marmalyuk, A. A., Murashova, A. V., Nalet, T. A., Padalitsa, A. A., Pikhtin, N. A., Sabitov, D. R., Simakov, V. A., Slipchenko, S. O., Telegin, K. Yu, Shamakhov, V. V., Tarasov, I. S.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2009)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2009)
Get full text
Journal Article