384x288 readout integrated circuit for MWIR and LWIR HgCdTe based FPA
Zverev, A V, Makarov, Yu S, Mikhantiev, E A, Sabinina, I V, Sidorov, G Yu, Dvoretskiy, S A
Published in Journal of physics. Conference series (02.11.2015)
Published in Journal of physics. Conference series (02.11.2015)
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Journal Article
The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface
Gorshkov, D. V., Sidorov, G. Yu, Sabinina, I. V., Sidorov, Yu. G., Marin, D. V., Yakushev, M. V.
Published in Technical physics letters (01.08.2020)
Published in Technical physics letters (01.08.2020)
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Journal Article
HgCdTe-Based 640 x 512 Matrix Midwave Infrared Photodetector
Marchishin, I. V, Sabinina, I. V, Sidorov, G. Yu, Yakushev, M. V, Varavin, V. S, Remesnik, V. G, Predein, A. V
Published in Journal of communications technology & electronics (01.03.2020)
Published in Journal of communications technology & electronics (01.03.2020)
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Journal Article
HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector
Marchishin, I. V., Sabinina, I. V., Sidorov, G. Yu, Yakushev, M. V., Varavin, V. S., Remesnik, V. G., Predein, A. V., Dvoretsky, S. A., Vasil’ev, V. V., Sidorov, Yu. G., Marin, D. V., Kovchavtsev, A. P., Latyshev, A. V.
Published in Journal of communications technology & electronics (01.03.2020)
Published in Journal of communications technology & electronics (01.03.2020)
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Journal Article
A Megapixel Matrix Photodetector of the Middle Infrared Range
Bazovkin, V. M., Varavin, V. S., Vasil’ev, V. V., Glukhov, A. V., Gorshkov, D. V., Dvoretsky, S. A., Kovchavtsev, A. P., Makarov, Yu. S., Marin, D. V., Mzhelsky, I. V., Polovinkin, V. G., Remesnik, V. G., Sabinina, I. V., Sidorov, Yu. G., Sidorov, G. Yu, Stroganov, A. S., Tsarenko, A. V., Yakushev, M. V., Latyshev, A. V.
Published in Journal of communications technology & electronics (01.09.2019)
Published in Journal of communications technology & electronics (01.09.2019)
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Journal Article
Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns
Zverev, A. V., Suslyakov, A. O., Sabinina, I. V., Sidorov, G. Yu, Yakushev, M. V., Kuzmin, V. D., Varavin, V. S., Remesnik, V. G., Makarov, Yu. S., Predein, A. V., Gorshkov, D. V., Dvoretsky, S. A., Vasil’ev, V. V., Sidorov, Yu. G., Latyshev, A. V., Kremis, I. I.
Published in Journal of communications technology & electronics (01.09.2019)
Published in Journal of communications technology & electronics (01.09.2019)
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Journal Article
HgCdTe p+-n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors
Bazovkin, V. M., Dvoretskiy, S. A., Guzev, A. A., Kovchavtsev, A. P., Marin, D. V., Panova, Z. V., Sabinina, I. V., Sidorov, Yu. G., Sidorov, G. Yu, Tsarenko, A. V., Varavin, V. S., Vasiliev, V. V., Yakushev, M. V.
Published in Physica status solidi. C (01.07.2016)
Published in Physica status solidi. C (01.07.2016)
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Journal Article
Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates
Izhnin, I I, Izhnin, A I, Savytskyy, H V, Vakiv, M M, Stakhira, Y M, Fitsych, O E, Yakushev, M V, Sorochkin, A V, Sabinina, I V, Dvoretsky, S A, Sidorov, Yu G, Varavin, V S, Pociask-Bialy, M, Mynbaev, K D
Published in Semiconductor science and technology (01.03.2012)
Published in Semiconductor science and technology (01.03.2012)
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Journal Article
CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures
Varavin, V. S., Vasilyev, V. V., Guzev, A. A., Dvoretsky, S. A., Kovchavtsev, A. P., Marin, D. V., Sabinina, I. V., Sidorov, Yu. G., Sidorov, G. Yu, Tsarenko, A. V., Yakushev, M. V.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2016)
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Journal Article
Nature of V-shaped defects in HgCdTe epilayers grown by molecular beam epitaxy
Sabinina, I.V., Gutakovsky, A.K., Sidorov, Yu.G., Latyshev, A.V.
Published in Journal of crystal growth (01.02.2005)
Published in Journal of crystal growth (01.02.2005)
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Journal Article
HgCdTe nanostructures on GaAs and Si substrate for IR and THz radiation detecting
Yakushev, M V, Varavin, V S, Vasil'ev, V V, Dvoretsky, S A, Mikhailov, N N, Sabinina, I V, Sidorov, Yu G, Shvetz, V A, Aseev, A L
Published in Journal of physics. Conference series (01.01.2012)
Published in Journal of physics. Conference series (01.01.2012)
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Journal Article
Effect of post-implantation anneal on the current-voltage characteristics of IR photodiodes based on p-CdxHg1-xTe
Vishnyakov, A. V., Varavin, V. S., Garifullin, M. O., Predein, A. V., Remesnik, V. G., Sabinina, I. V., Sidorov, G. Yu
Published in Physica status solidi. C (01.06.2010)
Published in Physica status solidi. C (01.06.2010)
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Journal Article
Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and Al$_{\mathbf{2}}$$O$_{\mathbf{3}}$$ Grown by Atomic Layer Deposition
Sidorov, G. Yu, Gorshkov, D. V., Sidorov, Yu. G., Sabinina, I. V., Varavin, V. S.
Published in Optoelectronics, instrumentation, and data processing (01.09.2020)
Published in Optoelectronics, instrumentation, and data processing (01.09.2020)
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Journal Article
Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and AlO Grown by Atomic Layer Deposition
Sidorov, G. Yu, Gorshkov, D. V., Sidorov, Yu. G., Sabinina, I. V., Varavin, V. S.
Published in Optoelectronics, instrumentation, and data processing (2020)
Published in Optoelectronics, instrumentation, and data processing (2020)
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Journal Article
The electrical properties of HgCdTe layers grown by MBE on Si and P + / n junction formed on its basis
Guzev, A. A., Kovchavtcev, A. P., Tsarenko, A. V., Yakushev, M. V., Varavin, V. S., Vasilyev, V. V., Dvoretsky, S. A., Marin, D. V., Sabinina, I. V., Shefer, D. A., Sidorov, G. Yu, Sidorov, Yu G.
Published in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) (01.06.2016)
Published in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) (01.06.2016)
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Conference Proceeding
Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm
Varavin, V.S., Sabinina, I.V., Sidorov, G.Yu, Marin, D.V., Remesnik, V.G., Predein, A.V., Dvoretsky, S.A., Vasilyev, V.V., Sidorov, Yu.G., Yakushev, M.V., Latyshev, A.V.
Published in Infrared physics & technology (01.03.2020)
Published in Infrared physics & technology (01.03.2020)
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Journal Article
Molecular Beam Epitaxy of CdHgTe: Current State and Horizons
Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Remesnik, V. G., Sabinina, I. V., Sidorov, Yu. G., Shvets, V. A., Yakushev, M. V., Latyshev, A. V.
Published in Optoelectronics, instrumentation, and data processing (01.09.2020)
Published in Optoelectronics, instrumentation, and data processing (01.09.2020)
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Journal Article
Monte Carlo Simulation of Charge Carrier Diffusion for Determining the Spatial Resolution of Infrared Cadmium—Mercury—Tellurium Detectors
Vishnyakov, A. V., Vasiliev, V. V., Sabinina, I. V., Sidorov, G. Yu, Stuchinsky, V. A.
Published in Optoelectronics, instrumentation, and data processing (01.09.2019)
Published in Optoelectronics, instrumentation, and data processing (01.09.2019)
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Journal Article
Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates
Sidorov, Yu. G., Yakushev, M. V., Varavin, V. S., Kolesnikov, A. V., Trukhanov, E. M., Sabinina, I. V., Loshkarev, I. D.
Published in Physics of the solid state (01.11.2015)
Published in Physics of the solid state (01.11.2015)
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Journal Article