CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion
Chowdhury, S., Man Hoi Wong, Swenson, B. L., Mishra, U. K.
Published in IEEE electron device letters (01.01.2012)
Published in IEEE electron device letters (01.01.2012)
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Journal Article
Interface states at the SiN/AlGaN interface on GaN heterojunctions for Ga and N-polar material
Yeluri, Ramya, Swenson, Brian L., Mishra, Umesh K.
Published in Journal of applied physics (15.02.2012)
Published in Journal of applied physics (15.02.2012)
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Journal Article
Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors
Yeluri, Ramya, Liu, Xiang, Swenson, Brian L., Lu, Jing, Keller, Stacia, Mishra, Umesh K.
Published in Journal of applied physics (28.08.2013)
Published in Journal of applied physics (28.08.2013)
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Journal Article
A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency
Schaake, Christopher A, Brown, David F, Swenson, Brian L, Keller, Stacia, Speck, James S, Mishra, Umesh K
Published in Semiconductor science and technology (01.10.2013)
Published in Semiconductor science and technology (01.10.2013)
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Journal Article
N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications
Nidhi, Dasgupta, Sansaptak, Yi Pei, Swenson, Brian L, Keller, Stacia, Speck, James S, Mishra, Umesh K
Published in IEEE electron device letters (01.12.2010)
Published in IEEE electron device letters (01.12.2010)
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Journal Article
수직 게이트 모듈을 포함하는 측면 III-질화물 디바이스들
NEUFELD CARL JOSEPH, GUPTA GEETAK, SWENSON BRIAN L, BISI DAVIDE, LAL RAKESH K, MISHRA UMESH
Year of Publication 15.06.2021
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Year of Publication 15.06.2021
Patent
Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth
Singisetti, Uttam, Man Hoi Wong, Dasgupta, Sansaptak, Nidhi, Swenson, Brian L, Thibeault, Brian J, Speck, James S, Mishra, Umesh K
Published in 68th Device Research Conference (01.06.2010)
Published in 68th Device Research Conference (01.06.2010)
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Conference Proceeding
N-polar GaN-based MIS-HEMTs for mixed signal applications
Mishra, Umesh K, Man Hoi Wong, Nidhi, Dasgupta, Sansaptak, Brown, David F, Swenson, Brian L, Keller, Stacia, Speck, James S
Published in 2010 IEEE MTT-S International Microwave Symposium (01.05.2010)
Published in 2010 IEEE MTT-S International Microwave Symposium (01.05.2010)
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Conference Proceeding
Current status and scope of gallium nitride-based vertical transistors for high-power electronics applicationThis work was done at Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
Chowdhury, Srabanti, Swenson, Brian L, Wong, Man Hoi, Mishra, Umesh K
Published in Semiconductor science and technology (21.06.2013)
Published in Semiconductor science and technology (21.06.2013)
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Journal Article
N-Face Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier
Man Hoi Wong, Yi Pei, Rongming Chu, Rajan, S., Swenson, B.L., Brown, D.F., Keller, S., DenBaars, S.P., Speck, J.S., Mishra, U.K.
Published in IEEE electron device letters (01.10.2008)
Published in IEEE electron device letters (01.10.2008)
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Journal Article
N-Polar GaN/AIN MIS-HEMT for Ka-Band Power Applications
NIDHI, DASGUPTA, Sansaptak, YI PEI, SWENSON, Brian L, KELLER, Stacia, SPECK, James S, MISHRA, Umesh K
Published in IEEE electron device letters (2010)
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Published in IEEE electron device letters (2010)
Journal Article
f and f of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT
Nidhi, Dasgupta, S., Yi Pei, Swenson, B.L., Brown, D.F., Keller, S., Speck, J.S., Mishra, U.K.
Published in IEEE electron device letters (01.06.2009)
Published in IEEE electron device letters (01.06.2009)
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Journal Article
N-Face Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With A1N Back-Barrier
MAN HOI WONG, YI PEI, RONGMING CHU, RAJAN, Siddharth, SWENSON, Brian L, BROWN, David F, KELLER, Stacia, DENBAARS, Steven P, SPECK, James S, MISHRA, Umesh K
Published in IEEE electron device letters (2008)
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Published in IEEE electron device letters (2008)
Journal Article