Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memoryElectronic supplementary information (ESI) available: Schematic illustration of nanoscale conical TiN/GST/TiN PCM cell array fabrication, schematic illustration of two-step etching, masked deposition method, endurance-cycling test of conical trilayer PRAM cell, process for SiO2 encapsulation of PCM cells, and minimum reset pulse width test. See DOI: 10.1039/c1jm14190b
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Year of Publication 20.12.2011
Year of Publication 20.12.2011
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JANG, Jaehyuck, KIM, Soo-Jung, HONG, Sung-Hoon, RHO, Junsuk, JUNG, Chunghwan, KO, Byoungsu, KIM, Doa
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Year of Publication 07.09.2023
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