Immobilization of streptavidin on 4H–SiC for biosensor development
Williams, Elissa H., Davydov, Albert V., Motayed, Abhishek, Sundaresan, Siddarth G., Bocchini, Peter, Richter, Lee J., Stan, Gheorghe, Steffens, Kristen, Zangmeister, Rebecca, Schreifels, John A., Rao, Mulpuri V.
Published in Applied surface science (01.06.2012)
Published in Applied surface science (01.06.2012)
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Journal Article
Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Process Using Group VIII Metal Catalysts
Sundaresan, Siddarth G, Davydov, Albert V, Vaudin, Mark D, Levin, Igor, Maslar, James E, Tian, Yong-Lai, Rao, Mulpuri V
Published in Chemistry of materials (13.11.2007)
Published in Chemistry of materials (13.11.2007)
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Journal Article
Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs
Sundaresan, S. G., Soe, Aye-Mya, Jeliazkov, S., Singh, R.
Published in IEEE transactions on electron devices (01.10.2012)
Published in IEEE transactions on electron devices (01.10.2012)
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Journal Article
Effects of microwave annealing on crystalline quality of ion-implanted SiC epitaxial layers
Mahadik, Nadeemullah A., Qadri, Syed B., Sundaresan, Siddarth G., Rao, Mulpuri V., Tian, Yonglai, Zhang, Qingchun
Published in Surface & coatings technology (15.06.2009)
Published in Surface & coatings technology (15.06.2009)
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Journal Article
Conference Proceeding
Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC
SUNDARESAN, SIDDARTH G., RAO, MULPURI V., TIAN, YONGLAI, SCHREIFELS, JOHN A., WOOD, MARK C., JONES, KENNETH A., DAVYDOV, ALBERT V.
Published in Journal of electronic materials (01.04.2007)
Published in Journal of electronic materials (01.04.2007)
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Journal Article
Ultra-low resistivity Al + implanted 4H–SiC obtained by microwave annealing and a protective graphite cap
Sundaresan, Siddarth G., Mahadik, Nadeemullah A., Qadri, Syed B., Schreifels, John A., Tian, Yong-Lai, Zhang, Qingchun, Gomar-Nadal, Elba, Rao, Mulpuri V.
Published in Solid-state electronics (2008)
Published in Solid-state electronics (2008)
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Journal Article
Characteristics of in situ Mg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps
Sundaresan, Siddarth G, Murthy, Madhu, Rao, Mulpuri V, Schreifels, John A, Mastro, M A, Eddy, Charles R, Holm, R T, Henry, R L, Freitas, Jaime A, Gomar-Nadal, Elba, Vispute, R D, Tian, Yong-Lai
Published in Semiconductor science and technology (01.10.2007)
Published in Semiconductor science and technology (01.10.2007)
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Journal Article
Surge Current and Avalanche Robustness of Commercial 1200 V SiC Schottky Diodes
Mulpuri, Vamsi, Singh, Ranbir, Sundaresan, Siddarth G.
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
4600 V Sic Dmosfets with RDS,On = 17 mΩ-cm2
Singh, Ranbir, Sundaresan, Siddarth G., Jeliazkov, Stoyan
Published in Materials science forum (05.06.2018)
Published in Materials science forum (05.06.2018)
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Journal Article
Avalanche Robustness of 4600 V SiC DMOSFETs
Mulpuri, Vamsi, Sundaresan, Siddarth G., Singh, Ranbir, Jeliazkov, Stoyan
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
Comparison of Energy Losses in High-Current 1700 V Switches
Singh, Ranbir, Sundaresan, Siddarth G., Grummel, Brian
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
Short Circuit Robustness of 1200 V SiC Junction Transistors and Power MOSFETs
Sundaresan, Siddarth G., Grummel, Brian, Singh, Ranbir
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
Current Gain Stability of SiC Junction Transistors Subjected to Long-Duration DC and Pulsed Current Stress
Sundaresan, Siddarth G., Grummel, Brian, Singh, Ranbir
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
Improvement of the Current Gain Stability of SiC Junction Transistors
Singh, Ranbir, Grummel, Brian, Hamilton, Dean, Sundaresan, Siddarth G.
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Solid-state microwave annealing of ion-implanted 4H–SiC
Sundaresan, Siddarth G., Tian, Yong-lai, Ridgway, Mark C., Mahadik, Nadeemullah A., Qadri, Syed B., Rao, Mulpuri V.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.08.2007)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.08.2007)
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Journal Article
Ultra-low resistivity A1+ implanted 4H-SiC obtained by microwave annealing and a protective graphite cap
SUNDARESAN, Siddarth G, MAHADIK, Nadeemullah A, QADRI, Syed B, SCHREIFELS, John A, TIAN, Yong-Lai, QINGCHUN ZHANG, GOMAR-NADAL, Elba, RAO, Mulpuri V
Published in Solid-state electronics (2008)
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Published in Solid-state electronics (2008)
Journal Article
Comparison of solid-state microwave annealing with conventional furnace annealing of ion-implanted SiC: Group III Nitrides, SiC and ZnO
SUNDARESAN, Siddarth G, RAO, Mulpuri V, YONGLAI TIAN, SCHREIFELS, John A, WOOD, Mark C, JONES, Kenneth A, DAVYDOV, Albert V
Published in Journal of electronic materials (2007)
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Published in Journal of electronic materials (2007)
Journal Article