Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution
Mori, Tatsuhiro, Kato, Masashi, Watanabe, Hideki, Ichimura, Masaya, Arai, Eisuke, Sumie, Shingo, Hashizume, Hidehisa
Published in Japanese Journal of Applied Physics (01.12.2005)
Published in Japanese Journal of Applied Physics (01.12.2005)
Get full text
Journal Article
Comparison of Silicon-on-Insulator Wafer Mappings between Photoluminescence Intensity and Microwave Photoconductivity Decay Lifetime
Tajima, Michio, Li, Zhiqiang, Sumie, Shingo, Hashizume, Hidehisa, Ogura, Atsushi
Published in Japanese Journal of Applied Physics (01.02.2004)
Published in Japanese Journal of Applied Physics (01.02.2004)
Get full text
Journal Article
Characterization of Si wafer Surfaces after Wet Chemical Treatment by the Microwave Reflectance Photconductivity Decay Method with Surface Electric Field
Tada, Atsushi, Hirano, Masashi, Ichimura, Masaya, Arai, Eisuke, Takamatsu, Hiroyuki, Sumie, Shingo
Published in Japanese Journal of Applied Physics (01.05.2001)
Published in Japanese Journal of Applied Physics (01.05.2001)
Get full text
Journal Article
Control of Surface Recombination of Si Wafers by an External Electrode
Ichimura, Masaya, Hirano, Masashi, Kato, Naoki, Arai, Eisuke, Takamatsu, Hiroyuki, Sumie, Shingo
Published in Japanese Journal of Applied Physics (01.03.1999)
Published in Japanese Journal of Applied Physics (01.03.1999)
Get full text
Journal Article
A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe -Its Mechanism and Applications to Evaluation of Lattice Damage in Semiconductors
Sumie, Shingo, Takamatsu, Hiroyuki, Nishimoto, Yoshiro, Horiuchi, Takefumi, Nakayama, Hiroshi, Kanata, Takashi, Nishino, Taneo
Published in Japanese Journal of Applied Physics (01.11.1992)
Published in Japanese Journal of Applied Physics (01.11.1992)
Get full text
Journal Article
Dose and Damage Measurements in Low Dose Ion Implantation in Silicon by Photo-Acoustic Displacement and Minority Carrier Lifetime
Washidzu, Gen, Hara, Tohru, Ichikawa, Ryuji, Takamatsu, Hiroyuki, Sumie, Shingo, Nishimoto, Yoshiro, Nakai, Yasuhide, Hashizume, Hidehisa, Miyoshi, Tsunemichi
Published in Japanese Journal of Applied Physics (01.06.1991)
Published in Japanese Journal of Applied Physics (01.06.1991)
Get full text
Journal Article
Lifetime Mapping Technique for Ultrathin Silicon-on-Insulator Wafers
Sumie, Shingo, Ojima, Futoshi, Yamashita, Keizo, Iba, Kunio, Hashizume, Hidehisa
Published in Journal of the Electrochemical Society (01.01.2005)
Published in Journal of the Electrochemical Society (01.01.2005)
Get full text
Journal Article
Theoretical analysis of photoacoustic displacement for inhomogeneous materials
TAKAMATSU, H, SUMIE, S, MORIMOTO, T, KAWATA, Y, NISHIMOTO, Y, HORIUCHI, T, NAKAYAMA, H, KITA, T, NISHINO, T
Published in Japanese Journal of Applied Physics (01.10.1994)
Published in Japanese Journal of Applied Physics (01.10.1994)
Get full text
Journal Article
APPARATUS AND METHOD FOR MEASURING SEMICONDUCTOR CARRIER LIFETIME
FUKUMOTO YOSHITO, HAYASHI KAZUSHI, SAKODA NAOKAZU, TAKAMATSU HIROYUKI, INUI MASAHIRO, SUMIE SHINGO
Year of Publication 09.07.2012
Get full text
Year of Publication 09.07.2012
Patent
APPARATUS AND METHOD FOR MEASURING SEMICONDUCTOR CARRIER LIFETIME
HAYASHI, KAZUSHI, FUKUMOTO, YOSHITO, TAKAMATSU, HIROYUKI, SUMIE, SHINGO, INUI, MASAHIRO, SAKODA, NAOKAZU
Year of Publication 14.04.2011
Get full text
Year of Publication 14.04.2011
Patent
Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method
Kato, Masashi, Kawai, Masahiko, Mori, Tatsuhiro, Ichimura, Masaya, Sumie, Shingo, Hashizume, Hidehisa
Published in Japanese Journal of Applied Physics (01.08.2007)
Published in Japanese Journal of Applied Physics (01.08.2007)
Get full text
Journal Article
APPARATUS AND METHOD FOR MEASURING SEMICONDUCTOR CARRIER LIFETIME
FUKUMOTO YOSHITO, HAYASHI KAZUSHI, SAKODA NAOKAZU, TAKAMATSU HIROYUKI, INUI MASAHIRO, SUMIE SHINGO
Year of Publication 09.08.2012
Get full text
Year of Publication 09.08.2012
Patent
SEMICONDUCTOR CARRIER LIFETIME MEASURING APPARATUS AND METHOD THEREFOR
FUKUMOTO YOSHITO, HAYASHI KAZUSHI, TAKAMATSU HIROYUKI, SAKOTA HISAKAZU, INUI MASAHIRO, SUMIE SHINGO
Year of Publication 17.11.2011
Get full text
Year of Publication 17.11.2011
Patent
Einrichtung und Verfahren zum Messen einer Halbleiterladungsträgerlebensdauer
Hayashi, Kazushi, Sumie, Shingo, Inui, Masahiro, Takamatsu, Hiroyuki, Sakoda, Naokazu, Fukumoto, Yoshito
Year of Publication 29.12.2016
Get full text
Year of Publication 29.12.2016
Patent