High-mobility poly-Si thin-film transistors fabricated by a novel excimer laser crystallization method
Shimizu, K., Sugiura, O., Matsumura, M.
Published in IEEE transactions on electron devices (01.01.1993)
Published in IEEE transactions on electron devices (01.01.1993)
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Journal Article
Cryogenic neutron detector by InSb semiconductor detector with high-density helium-3 gas converter
Nakamura, T, Katagiri, M, Aratono, Y, Kanno, I, Hishiki, S, Sugiura, O, Murase, Y
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (11.03.2004)
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (11.03.2004)
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Journal Article
Undoped InSb Schottky detector for gamma-ray measurements
Hishiki, S., Kanno, I., Sugiura, O., Ruifei Xiang, Nakamura, T., Katagiri, M.
Published in IEEE transactions on nuclear science (01.12.2005)
Published in IEEE transactions on nuclear science (01.12.2005)
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Journal Article
Schottky and pn junction cryogenic radiation detectors made of p-InSb compound semiconductor
Kanno, I., Hishiki, S., Murakami, H., Sugiura, O., Murase, Y., Nakamura, T., Katagiri, M.
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (11.03.2004)
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (11.03.2004)
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Journal Article
Use of liquid helium-3 as a neutron converter for a semiconductor-based neutron detector
Nakamura, T, Katagiri, M, Aratono, Y, Kanno, I, Hishiki, S, Sugiura, O, Murase, Y
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21.08.2004)
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21.08.2004)
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Journal Article
Undoped InSb Schottky detector for gamma ray measurements
Hishiki, S., Kanno, I., Sugiura, O., Xiang, R., Nakamura, T., Katagiri, M.
Published in IEEE Symposium Conference Record Nuclear Science 2004 (2004)
Published in IEEE Symposium Conference Record Nuclear Science 2004 (2004)
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Conference Proceeding
Characteristics of amorphous-silicon distributed-threshold voltage transistors formed by ion implantation
Satoh, T., Sugiura, O., Matsumura, M.
Published in IEEE transactions on electron devices (01.12.1992)
Published in IEEE transactions on electron devices (01.12.1992)
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Journal Article
High-mobility poly-Si TFT's fabricated by a novel excimer laser crystallization method
Shimizu, K., Sugiura, O., Matsumura, M.
Published in IEEE transactions on electron devices (01.11.1992)
Published in IEEE transactions on electron devices (01.11.1992)
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Journal Article
Low-temperature growth of InSb by vacuum MOCVD using TEln and SbH3
Sugiura, O., Kameda, H., Shiina, K., Matsumura, M.
Published in Journal of electronic materials (01.01.1988)
Published in Journal of electronic materials (01.01.1988)
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Journal Article
A study of 2sf beat phenomena in induction motors
Akiyama, Y., Sugiura, O.
Published in Conference Record of the 1992 IEEE Industry Applications Society Annual Meeting (1992)
Published in Conference Record of the 1992 IEEE Industry Applications Society Annual Meeting (1992)
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Conference Proceeding
DEPOSITION MECHANISM OF SiO2 CVD USING TETRA-ISOCYANATE SILANE AND WATER
Fujimoto, A, Sugiura, O
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 9A, pp. 5164-5168. 2000 (01.01.2000)
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Published in Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 9A, pp. 5164-5168. 2000 (01.01.2000)
Journal Article
Batch-processing of high performance amorphous-silicon/silicon-nitride thin-film transistors (for active-matrix addressable LCD)
Ahn, B.C., Kanoh, H., Sugiura, O., Matsumura, M.
Published in Conference Record of the 1991 International Display Research Conference (1991)
Published in Conference Record of the 1991 International Display Research Conference (1991)
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Conference Proceeding
Atomic layer epitaxy of Si using atomic H
Imai, Shigeru, Iizuka, Toshio, Sugiura, Osamu, Matsumura, Masakiyo
Published in Thin solid films (25.03.1993)
Published in Thin solid films (25.03.1993)
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Journal Article
Conference Proceeding
Rectifying characteristics of an InSb device at low temperature
Kanno, I, Yoshihara, F, Sugiura, O, Katagiri, M
Published in AIP Conference Proceedings (01.01.2002)
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Published in AIP Conference Proceedings (01.01.2002)
Conference Proceeding