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Published in IEEE transactions on electron devices (01.11.2016)
Published in IEEE transactions on electron devices (01.11.2016)
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Published in IEEE transactions on electron devices (01.03.2014)
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Published in IEEE transactions on electron devices (01.02.2012)
Published in IEEE transactions on electron devices (01.02.2012)
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Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
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Published in Japanese Journal of Applied Physics (01.04.2014)
Published in Japanese Journal of Applied Physics (01.04.2014)
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Published in 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2014)
Published in 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2014)
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Thick-Strained-Si/Relaxed-SiGe Structure of High-Performance RF Power LDMOSFETs for Cellular Handsets
Kondo, M., Sugii, N., Hoshino, Y., Hirasawa, W., Kimura, Y., Miyamoto, M., Fujioka, T., Kamohara, S., Kondo, Y., Kimura, S., Yoshida, I.
Published in IEEE transactions on electron devices (01.12.2006)
Published in IEEE transactions on electron devices (01.12.2006)
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Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Published in Applied physics express (01.04.2015)
Published in Applied physics express (01.04.2015)
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Kawanago, T., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.
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Published in IEEE electron device letters (01.03.2012)
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Published in Journal of Low Power Electronics and Applications (24.04.2014)
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Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime
Hao Qiu, Mizutani, Tomoko, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Sugii, Nobuyuki, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
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Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Rare Earth Oxide Capping Effect on La2O3 Gate Dielectrics for Equivalent Oxide Thickness Scaling toward 0.5 nm
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Published in Jpn J Appl Phys (01.10.2011)
Published in Jpn J Appl Phys (01.10.2011)
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Published in Japanese Journal of Applied Physics (01.10.2011)
Published in Japanese Journal of Applied Physics (01.10.2011)
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