Effects of Device Structure and Back Biasing on HCI and NBTI in Silicon-on-Thin-BOX (SOTB) CMOSFET
Ishigaki, T, Tsuchiya, R, Morita, Y, Sugii, N, Kimura, S
Published in IEEE transactions on electron devices (01.04.2011)
Published in IEEE transactions on electron devices (01.04.2011)
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Journal Article
La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode
Zadeh, D.H., Oomine, H., Suzuki, Y., Kakushima, K., Ahmet, P., Nohira, H., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., Iwai, H.
Published in Solid-state electronics (01.04.2013)
Published in Solid-state electronics (01.04.2013)
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Journal Article
Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer
Dou, C., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.
Published in Microelectronics and reliability (01.04.2012)
Published in Microelectronics and reliability (01.04.2012)
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Journal Article
Interface and electrical properties of La-silicate for direct contact of high- k with silicon
Kakushima, K., Tachi, K., Adachi, M., Okamoto, K., Sato, S., Song, J., Kawanago, T., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., Iwai, H.
Published in Solid-state electronics (01.07.2010)
Published in Solid-state electronics (01.07.2010)
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Journal Article
A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based electrodes using CeOx buffer layer
Hadi, M S, Kano, S, Kakushima, K, Kataoka, Y, Nishiyama, A, Sugii, N, Wakabayashi, H, Tsutsui, K, Natori, K, Iwai, H
Published in Semiconductor science and technology (01.11.2014)
Published in Semiconductor science and technology (01.11.2014)
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Journal Article
Valence number transition and silicate formation of cerium oxide films on Si(100)
Mamatrishat, M., Kouda, M., Kakushima, K., Nohira, H., Ahmet, P., Kataoka, Y., Nishiyama, A., Tsutsui, K., Sugii, N., Natori, K., Hattori, T., Iwai, H.
Published in Vacuum (27.04.2012)
Published in Vacuum (27.04.2012)
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Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric
KAKUSHIM, K, KOYANAGI, T, TACHI, K, SONG, J, AHMET, P, TSUTSUI, K, SUGII, N, HATTORI, T, IWAI, H
Published in Solid-state electronics (01.07.2010)
Published in Solid-state electronics (01.07.2010)
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Journal Article
Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion
Kakushima, K., Okamoto, K., Adachi, M., Tachi, K., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., Iwai, H.
Published in Solid-state electronics (01.09.2008)
Published in Solid-state electronics (01.09.2008)
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Conference Proceeding
Solid-phase crystallization of Si1−xGex alloy layers
Yamaguchi, S., Sugii, N., Park, S. K., Nakagawa, K., Miyao, M.
Published in Journal of applied physics (15.02.2001)
Published in Journal of applied physics (15.02.2001)
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Journal Article
Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process
Kawanago, T., Suzuki, T., Lee, Y., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., Iwai, H.
Published in Solid-state electronics (01.02.2012)
Published in Solid-state electronics (01.02.2012)
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Journal Article
Novel single p+poly-Si/Hf/SiON gate stack technology on silicon-on-thin-buried-oxide (SOTB) for ultra-low leakage applications
Yamamoto, Y., Makiyama, H., Yamashita, T., Oda, H., Kamohara, S., Sugii, N., Yamaguchi, Y., Mizutani, T., Kobayashi, M., Hiramoto, T.
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
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Conference Proceeding
Journal Article
Physical and electrical properties of ultra-thin nickel silicide Schottky diodes on Si (100)
Tamura, Y, Yoshihara, R, Kakushima, K, Nohira, H, Nakatsuka, O, Ahmet, P, Kataoka, Y, Nishiyama, A, Sugii, N, Tsutsui, K, Natori, K, Hattori, T, Iwai, H
Published in Journal of physics. Conference series (01.03.2013)
Published in Journal of physics. Conference series (01.03.2013)
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Journal Article
Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film
Kakushima, K., Tachi, K., Song, J., Sato, S., Nohira, H., Ikenaga, E., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., Iwai, H.
Published in Journal of applied physics (15.12.2009)
Published in Journal of applied physics (15.12.2009)
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Journal Article
Post metallization annealing study in La2O3/Ge MOS structure
SONG, J, KAKUSHIMA, K, AHMET, P, TSUTSUI, K, SUGII, N, HATTORI, T, IWAI, H
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Conference Proceeding
Journal Article
Selection of rare earth silicates for highly scaled gate dielectrics
Kakushima, K., Okamoto, K., Koyanagi, T., Kouda, M., Tachi, K., Kawanago, T., Song, J., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., Iwai, H.
Published in Microelectronic engineering (01.10.2010)
Published in Microelectronic engineering (01.10.2010)
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Journal Article
Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing
Ng, J.A., Kuroki, Y., Sugii, N., Kakushima, K., Ohmi, S.-I., Tsutsui, K., Hattori, T., Iwai, H., Wong, H.
Published in Microelectronic engineering (01.06.2005)
Published in Microelectronic engineering (01.06.2005)
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Conference Proceeding
Effect of thin Si insertion at metal gate/high-k interface on electrical characteristics of MOS device with La2O3
KITAYAMA, D, KOYANAGI, T, KAKUSHIMA, K, AHMET, P, TSUTSUI, K, NISHIYAMA, A, SUGII, N, NATORI, K, HATTORI, T, IWAI, H
Published in Microelectronic engineering (01.07.2011)
Published in Microelectronic engineering (01.07.2011)
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Conference Proceeding
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