Epitaxial Si 1− x Ge x grown into fine contact hole by ultrahigh-vacuum chemical vapor deposition
Nakahata, Takumi, Sugihara, Kohei, Furukawa, Taisuke, Yamakawa, Satoshi, Maruno, Shigemitsu, Tokuda, Yasunori, Yamamoto, Kazuma, Inagaki, Toru, Kiyama, Hiromi
Published in Materials science & engineering. B, Solid-state materials for advanced technology (2000)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (2000)
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Journal Article
Epitaxial Si1-xGex grown into fine contact hole by ultrahigh-vacuum chemical vapor deposition
NAKAHATA, T, SUGIHARA, K, FURUKAWA, T, YAMAKAWA, S, MARUNO, S, TOKUDA, Y, YAMAMOTO, K, INAGAKI, T, KIYAMA, H
Published in Materials science & engineering. B, Solid-state materials for advanced technology (03.01.2000)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (03.01.2000)
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Journal Article
Improvement of alignment tolerance against contact hole etching by growing of underlying silicon-selective epitaxial layer
Nakahata, Takumi, Sugihara, Kohei, Furukawa, Taisuke, Nishioka, Yasutaka, Maruno, Shigemitsu, Abe, Yuji, Tokuda, Yasunori, Satoh, Shinichi
Published in Microelectronic engineering (01.08.2001)
Published in Microelectronic engineering (01.08.2001)
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Parasitic Resistance Reduction in Deep Submicron Dual-Gate Transistors with Partially Elevated Source/Drain Extension Regions Fabricated by Complementary Metal-Oxide-Semiconductor Technologies
Sugihara, Kohei, Miura, Naruhisa, Furukawa, Taisuke, Nakahata, Takumi, Nishioka, Yasutaka, Yamakawa, Satoshi, Abe, Yuji, Maruno, Shigemitsu, Tokuda, Yasunori
Published in Japanese Journal of Applied Physics (01.02.2000)
Published in Japanese Journal of Applied Physics (01.02.2000)
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Journal Article
OPTICAL MODULATOR DRIVE CONTROLLER
HAYASHI SHUSAKU, SHIMAKURA YASUHISA, YOSHIDA TAKESHI, SUGIHARA KOHEI, YAGYU EIJI
Year of Publication 13.05.2013
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Year of Publication 13.05.2013
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