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Year of Publication 21.12.2023
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Year of Publication 05.02.2019
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Year of Publication 10.01.2019
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Silicon carbide semiconductor device and method for manufacturing same
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Year of Publication 18.12.2018
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Year of Publication 13.12.2018
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Year of Publication 13.12.2018
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SILICON CARBIDE SEMICONDUCTOR DEVICE
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Year of Publication 01.11.2018
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Year of Publication 30.08.2018
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Year of Publication 30.08.2018
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Halbleiterbauelement
Adachi, Kohei, Hino, Shiro, Fukui, Yutaka, Sugawara, Katsutoshi, Konishi, Kazuya
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Year of Publication 09.03.2023
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Siliciumcarbid-Halbleitereinheit
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Year of Publication 12.01.2023
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Year of Publication 12.01.2023
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Halbleitereinheit
Adachi, Kohei, Fukui, Yutaka, Sugawara, Katsutoshi, Tanaka, Rina, Konishi, Kazuya
Year of Publication 08.12.2022
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Year of Publication 08.12.2022
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Semiconductor device having a gate trench and an outside trench
Fukui, Yutaka, Taguchi, Kensuke, Sugawara, Katsutoshi, Tanaka, Rina, Kagawa, Yasuhiro, Fujiwara, Nobuo
Year of Publication 22.10.2019
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Year of Publication 22.10.2019
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SILICIUMCARBID-HALBLEITEREINHEIT
Miura, Naruhisa, Sugawara, Katsutoshi, Tanaka, Rina, Kagawa, Yasuhiro
Year of Publication 27.10.2022
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Year of Publication 27.10.2022
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