Effect of Device Temperature on Domain Wall Motion in a Perpendicularly Magnetized Co/Ni Wire
Tanigawa, Hironobu, Suemitsu, Katsumi, Fukami, Shunsuke, Ohshima, Norikazu, Suzuki, Tetsuhiro, Kariyada, Eiji, Ishiwata, Nobuyuki
Published in Applied physics express (01.01.2011)
Published in Applied physics express (01.01.2011)
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Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition
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Published in Japanese Journal of Applied Physics (01.04.2008)
Published in Japanese Journal of Applied Physics (01.04.2008)
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Etching Magnetic Tunnel Junction with Metal Etchers
Kinoshita, Keizo, Utsumi, Hiroaki, Suemitsu, Katsumi, Hada, Hiromitsu, Sugibayashi, Tadahiko
Published in Japanese Journal of Applied Physics (01.08.2010)
Published in Japanese Journal of Applied Physics (01.08.2010)
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Effect of Inserting a Pt Layer into a Perpendicularly Magnetized Co/Ni Multilayered Film in Terms of Current-Induced Domain Wall Motion
Tanigawa, Hironobu, Ohshima, Norikazu, Suzuki, Tetsuhiro, Suemitsu, Katsumi, Kariyada, Eiji
Published in Japanese Journal of Applied Physics (01.10.2012)
Published in Japanese Journal of Applied Physics (01.10.2012)
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Operating principle of a three-terminal domain wall device with perpendicularly magnetized Ta/CoFeB/MgO free layer and underlying hard magnets
Tanigawa, Hironobu, Suzuki, Tetsuhiro, Suemitsu, Katsumi, Ohshima, Norikazu, Kitamura, Takuya, Ohkochi, Takuo, Kotsugi, Masato, Kinoshita, Toyohiko, Koyama, Tomohiro, Chiba, Daichi, Yoshimura, Yoko, Ueda, Kohei, Ono, Teruo, Kariyada, Eiji
Published in Japanese Journal of Applied Physics (01.06.2014)
Published in Japanese Journal of Applied Physics (01.06.2014)
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Journal Article
Effect of Inserting a Pt Layer into a Perpendicularly Magnetized Co/Ni Multilayered Film in Terms of Current-Induced Domain Wall Motion
Tanigawa, Hironobu, Ohshima, Norikazu, Suzuki, Tetsuhiro, Suemitsu, Katsumi, Kariyada, Eiji
Published in Japanese Journal of Applied Physics (01.10.2012)
Published in Japanese Journal of Applied Physics (01.10.2012)
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SEMICONDUCTOR DEVICE
TANIGAWA HIRONOBU, SUZUKI AKIHIRO, SUEMITSU KATSUMI, KARIYADA HIDETSUGU, KITAMURA TAKUYA
Year of Publication 30.07.2015
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Year of Publication 30.07.2015
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