Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
Zakgeim, A. L., Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyy, M. A., Stus’, N. M., Usikova, A. A., Cherniakov, A. E.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2017)
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Journal Article
InAsSbP Photodiodes for 2.6–2.8-μm Wavelengths
Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Usikova, A. A.
Published in Technical physics (01.02.2018)
Published in Technical physics (01.02.2018)
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Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes
Karandashev, S. A., Matveev, B. A., Ratushnyi, V. I., Remennyi, M. A., Rybal’chenko, A. Yu, Stus’, N. M.
Published in Technical physics (01.11.2014)
Published in Technical physics (01.11.2014)
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Journal Article
Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes
Brunkov, P.N., Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.
Published in Infrared physics & technology (01.05.2014)
Published in Infrared physics & technology (01.05.2014)
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Journal Article
Sources of spontaneous emission based on indium arsenide
Zotova, N. V., Il’inskaya, N. D., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2008)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2008)
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Journal Article
P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction
Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.
Published in Infrared physics & technology (01.01.2018)
Published in Infrared physics & technology (01.01.2018)
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Journal Article
Array of InGaAsSb light-emitting diodes (λ = 3.7 μm)
Zakheim, A. L., Zotova, N. V., Il’inskaya, N. D., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Usikova, A. A., Chernyakov, A. E.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2009)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2009)
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Journal Article
InAs and InAsSb LEDs with built-in cavities
Aidaraliev, M, Zotova, N V, Il'inskaya, N D, Karandashev, S A, Matveev, B A, Remennyi, M A, Stus', N M, Talalakin, G N
Published in Semiconductor science and technology (01.04.2003)
Published in Semiconductor science and technology (01.04.2003)
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Journal Article
Photoacoustic gas detection using a cantilever microphone and III–V mid-IR LEDs
Kuusela, T., Peura, J., Matveev, B.A., Remennyy, M.A., Stus’, N.M.
Published in Vibrational spectroscopy (10.11.2009)
Published in Vibrational spectroscopy (10.11.2009)
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Journal Article
The flip-chip InGaAsSb/GaSb LEDs emitting at a wavelength of 1.94 μm
Zotova, N. V., Il’inskaya, N. D., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Shlenskiĭ, A. A.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2006)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2006)
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Journal Article
Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Karpukhina, N.G., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.05.2016)
Published in Infrared physics & technology (01.05.2016)
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Journal Article
Cooled photodiodes based on a type-II single p-InAsSbP/n-InAs heterostructure
Il’inskaya, N. D., Karandashev, S. A., Latnikova, N. M., Lavrov, A. A., Matveev, B. A., Petrov, A. S., Remennyi, M. A., Sevost’yanov, E. N., Stus’, N. M.
Published in Technical physics letters (01.09.2013)
Published in Technical physics letters (01.09.2013)
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Journal Article
Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes
Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyy, M. A., Rybal’chenko, A. Yu, Stus’, N. M.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2011)
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Journal Article
Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff λ0.1 = 5.2 μm)
Karandashev, S. A., Matveev, B. A., Mzhelskii, I. V., Polovinkin, V. G., Remennyi, M. A., Rybal’chenko, A. Yu, Stus’, N. M.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2012)
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Journal Article
Uncooled photodiodes based on InAsSb(P) with long-wavelength cut-off at λ = 5.8 μm
Il’inskaya, N. D., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M.
Published in Technical physics letters (01.03.2012)
Published in Technical physics letters (01.03.2012)
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Journal Article
Indium arsenide light-emitting diodes with a cavity formed by an anode contact and semiconductor-air interface
Zotova, N. V., Il’inskaya, N. D., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Shustov, V. V.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2004)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2004)
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Journal Article
Front surface illuminated InAsSb photodiodes (long-wavelength cutoff λ0.1 = 4.5 μm) operating at temperatures of 25–80°C
Il’inskaya, N. D., Zakgeim, A. L., Karandashev, S. A., Matveev, B. A., Ratushnyi, V. I., Remennyy, M. A., Rybal’chenko, A. Yu, Stus’, N. M., Chernyakov, A. E.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2012)
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Journal Article
Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys
Aydaraliev, M, Zotova, N V, Karandashov, S A, Matveev, B A, Stus', N M, Talalakin, G N
Published in Semiconductor science and technology (01.08.1993)
Published in Semiconductor science and technology (01.08.1993)
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Journal Article
Optically pumped “immersion-lens” infrared light emitting diodes based on narrow-gap III–V semiconductors
Aidaraliev, M., Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyi, M. A., Stus’, N. M., Talalakin, G. N.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2002)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2002)
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