Search Results - "STRICKER ANDREAS D" :: K.UTB vyhledávací portál

ELECTROSTATIC DISCHARGE PROTECTION STRUCTURES FOR EFUSES

by AHMED Y. GINAWI, ANDREAS D. STRICKER, EPHREM G. GEBRESELASIE, ALAIN F. LOISEAU, RICHARD A. PORO, JOSEPH M. LUKAITIS
Year of Publication 23.06.2017

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METHODS FOR MANUFACTURING A HIGH VOLTAGE JUNCTION FIELD EFFECT TRANSISTOR USING A HYBRID ORIENTATION TECHNOLOGY WAFER

by CAMILLO-CASTILLO RENATA, STRICKER ANDREAS D, GAUTHIER, JR. ROBERT J, PHELPS RICHARD A
Year of Publication 15.10.2009

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DEVICE STRUCTURES FOR A HIGH VOLTAGE JUNCTION FIELD EFFECT TRANSISTOR MANUFACTURED USING A HYBRID ORIENTATION TECHNOLOGY WAFER AND DESIGN STRUCTURES FOR A HIGH VOLTAGE INTEGRATED CIRCUIT

by CAMILLO-CASTILLO RENATA, STRICKER ANDREAS D, GAUTHIER, JR. ROBERT J, PHELPS RICHARD A
Year of Publication 15.10.2009

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TRANSISTOR STRUCTURE WITH A SIDEWALL-DEFINED INTRINSIC BASE TO EXTRINSIC BASE LINK-UP REGION AND METHOD OF FORMING THE STRUCTURE

by CAMILLO-CASTILLO RENATA, STRICKER ANDREAS D, DAHLSTROM MATTIAS E, GRAY PETER B, HERRIN RUSSELL T, HARAME DAVID L, JOSEPH ALVIN J
Year of Publication 22.12.2011

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BIPOLAR TRANSISTOR STRUCTURE AND METHOD OF FORMING THE STRUCTURE

by GRAY, PETER, B, DAHLSTROM, MATTIAS, E, HARAME, DAVID, L, HERRIN, RUSSELL, T, JOSEPH, ALVIN, J, CAMILLO-CASTILLO, RENATA, STRICKER, ANDREAS, D
Year of Publication 22.12.2011

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Bipolar transistor with collector having an epitaxial Si:C region

by KRISHNASAMY RAJENDRAN, STRICKER ANDREAS D, KHATER MARWAN H, FREEMAN GREGORY G, SCHONENBERG KATHRYN T
Year of Publication 28.10.2008

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Bipolar transistor with collector having an epitaxial Si:C region

by Freeman, Gregory G, Khater, Marwan H, Krishnasamy, Rajendran, Schonenberg, Kathryn T, Stricker, Andreas D
Year of Publication 28.10.2008

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TAILORED BIPOLAR TRANSISTOR DOPING PROFILE FOR IMPROVED RELIABILITY

by NOWAK EDWARD J, STRICKER ANDREAS D, JOHNSON JEFFREY B, VOEGELI BENJAMIN T
Year of Publication 11.09.2008

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Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the structure

by HARAME, DAVID L, DAHLSTROM, MATTIAS E, STRICKER, ANDREAS D, CAMILLO-CASTILLO, RENATA, HERRIN, RUSSELL T, GRAY, PETER B, JOSEPH, ALVIN J
Year of Publication 11.05.2017

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BIPOLAR TRANSISTOR WITH DUAL SHALLOW TRENCH ISOLATION AND LOW BASE RESISTANCE

by STRICKER ANDREAS D, DAHLSTROM MATTIAS E, ORNER BRADLEY A, KHATER MARWAN H
Year of Publication 27.12.2007

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Self-aligned mask formed utilizing differential oxidation rates of materials

by STRICKER ANDREAS D, CHEN HUAJIE, FREEMAN GREGORY G, RIEH JAE-SUNG, SCHONENBERG KATHRYN T
Year of Publication 30.10.2007

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Self-aligned mask formed utilizing differential oxidation rates of materials

by Chen, Huajie, Schonenberg, Kathryn T, Freeman, Gregory G, Stricker, Andreas D, Rieh, Jae-Sung
Year of Publication 30.10.2007

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TUNEABLE SEMICONDUCTOR DEVICE

by VOLDMAN, STEVEN, H, FREEMAN, GREGORY, G, SHERIDAN, DAVID, C, ST.ONGE, STEPHEN, A, RIEH, JAE-SUNG, STRICKER, ANDREAS, D
Year of Publication 01.04.2009

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Methods of base formation in a BiCOMS process

by MANN RANDY W, STRICKER ANDREAS D, PURTELL ROBERT J, KHATER MARWAN H, RAINEY BETH ANN, RIEH JAE-SUNG, LIU QIZHI, GEISS PETER J
Year of Publication 13.04.2010

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Methods of base formation in a BiCOMS process

by Geiss, Peter J, Khater, Marwan H, Liu, Qizhi, Mann, Randy W, Purtell, Robert J, Rainey, Beth Ann, Rieh, Jae-Sung, Stricker, Andreas D
Year of Publication 13.04.2010

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