Investigation of AlN buffer layers on 6H-SiC for AlInN HEMTs grown by MOVPE
Behmenburg, H., Giesen, C., Srnanek, R., Kovac, J., Kalisch, H., Heuken, M., Jansen, R.H.
Published in Journal of crystal growth (01.02.2011)
Published in Journal of crystal growth (01.02.2011)
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Journal Article
Study of photoexcited plasma in p-doped GaAs beveled structures by micro-Raman spectroscopy
Srnanek, R., Irmer, G., Donoval, D., Novotny, I., Sciana, B., Radziewicz, D., Tlaczala, M.
Published in Applied surface science (30.05.2008)
Published in Applied surface science (30.05.2008)
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Journal Article
Cross-sectional and surface Raman mapping of thick GaN layers
Korbutowicz, R., Tłaczała, M., Kovač, J., Irmer, G., Srnanek, R.
Published in Crystal research and technology (1979) (01.12.2008)
Published in Crystal research and technology (1979) (01.12.2008)
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Journal Article
Preparation and properties of thin parylene layers as the gate dielectrics for organic field effect transistors
Jakabovič, J., Kováč, J., Weis, M., Haško, D., Srnánek, R., Valent, P., Resel, R.
Published in Microelectronics (01.03.2009)
Published in Microelectronics (01.03.2009)
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Journal Article
Determination of the doping concentration profile in Si δ-doped GaAs layers using micro-Raman spectroscopy of bevelled structures
Srnanek, R., Geurts, J., Lentze, M., Irmer, G., Kovac, J., Donoval, D., Mc Phail, D.S., Kordos, P., Florovic, M., Vincze, A., Sciana, B., Radziewicz, D., Tlaczala, M.
Published in Thin solid films (21.02.2006)
Published in Thin solid films (21.02.2006)
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Journal Article
Accurate carrier profiling of n-type GaAs junctions
Clarysse, T., Brammertz, G., Vanhaeren, D., Eyben, P., Goossens, J., Clemente, F., Meuris, M., Vandervorst, W., Srnanek, R., Kinder, R., Sciana, B., Radziewicz, D., Li, Zhiqiang
Published in Materials science in semiconductor processing (01.10.2008)
Published in Materials science in semiconductor processing (01.10.2008)
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Journal Article
Conference Proceeding
Study of δ-doped GaAs layers by micro-Raman spectroscopy on bevelled samples
Srnanek, R, Geurts, J, Lentze, M, Irmer, G, Donoval, D, Brdecka, P, Kordos, P, Förster, A, Sciana, B, Radziewicz, D, Tlaczala, M
Published in Applied surface science (31.05.2004)
Published in Applied surface science (31.05.2004)
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Journal Article
Properties of GaN layers deposited on AlN/sapphire template substrates
Prażmowska, J, Korbutowicz, R, Szyszka, A, Wośko, M, Serafińczuk, J, Paszkiewicz, R, Podhorodecki, A, Misiewicz, J, Kovač, J, Srnanek, R, Tłaczała, M
Published in Journal of physics. Conference series (01.01.2009)
Published in Journal of physics. Conference series (01.01.2009)
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Journal Article
Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device
Lalinský, T., Hudek, P., Vanko, G., Dzuba, J., Kutiš, V., Srnánek, R., Choleva, P., Vallo, M., Držík, M., Matay, L., Kostič, I.
Published in Microelectronic engineering (01.10.2012)
Published in Microelectronic engineering (01.10.2012)
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Journal Article
Conference Proceeding
Micro-Raman study of photoexcited plasma in GaAs bevelled structures
Srnanek, R., Irmer, G., Geurts, J., Lentze, M., Donoval, D., Sciana, B., Radziewicz, D., Tlaczala, M., Florovic, M., Novotny, I.
Published in Applied surface science (30.04.2005)
Published in Applied surface science (30.04.2005)
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Journal Article
Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy
Srnanek, R, Kinder, R, Sciana, B, Radziewicz, D, McPhail, D.S, Littlewood, S.D, Novotny, I
Published in Applied surface science (01.06.2001)
Published in Applied surface science (01.06.2001)
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Journal Article
Determination of doping concentrations in very thin GaAs layers using micro-Raman spectroscopy on bevelled samples
Srnanek, R., Vesely, M., Vincze, A., Florovic, M., Kovac, J., Irmer, G., Prunici, P., Mc Phail, D.S., Sciana, B., Radziewicz, D., Tlaczala, M.
Published in Vacuum (14.10.2005)
Published in Vacuum (14.10.2005)
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Journal Article
A Raman study of GaAsN, GaInAsN layers on bevelled samples
Srnanek, R., Vincze, A., Kovac, J., Gregora, I., Mc Phail, D.S., Gottschalch, V.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.04.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.04.2002)
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Journal Article
Conference Proceeding
MOVPE technology and characterisation of silicon δ-doped GaAs and AlxGa1-xAs
SCIANA, B, RADZIEWICZ, D, SRNANEK, R, PASZKIEWICZ, B, TŁACZAŁA, M, UTKO, M, SITAREK, P, SIKH, G, MISIEWICZ, J, KINDER, R, KOVAC, J
Published in Thin solid films (03.06.2002)
Published in Thin solid films (03.06.2002)
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Conference Proceeding
Journal Article
Thermal stability of NbN films deposited on GaAs substrates
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Journal Article
Conference Proceeding
A computer controlled chemical bevel etching apparatus: applications to Auger analysis of multi-layered structures
El-Gomati, M, Gelsthorpe, A, Srnanek, R, Liday, J, Vogrincic, P, Kovac, J
Published in Applied surface science (01.04.1999)
Published in Applied surface science (01.04.1999)
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Journal Article
Conference Proceeding
Surface and interface analysis of iodine-doped pentacene structures for OTFTs
Jakabovič, J., Vincze, A., Kováč, J., Srnánek, R., Kováč Jr, J., Dobročka, E., Donoval, D., Heinemeyer, U., Schreiber, F., Machovič, V., Uherek, F.
Published in Surface and interface analysis (01.01.2011)
Published in Surface and interface analysis (01.01.2011)
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Journal Article
Conference Proceeding
Chemical bevelling of GaAs-based structures
Srnanek, R, Novotny, I, Hotovy, I, Gomati, M.El
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.06.1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.06.1997)
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