Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices
Farrell, R M, Young, E C, Wu, F, DenBaars, S P, Speck, J S
Published in Semiconductor science and technology (08.02.2012)
Published in Semiconductor science and technology (08.02.2012)
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Journal Article
Improved growth rates and purity of basic ammonothermal GaN
Pimputkar, S., Kawabata, S., Speck, J.S., Nakamura, S.
Published in Journal of crystal growth (01.10.2014)
Published in Journal of crystal growth (01.10.2014)
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Journal Article
Conference Proceeding
High-power AlGaN/GaN HEMTs for Ka-band applications
Palacios, T., Chakraborty, A., Rajan, S., Poblenz, C., Keller, S., DenBaars, S.P., Speck, J.S., Mishra, U.K.
Published in IEEE electron device letters (01.11.2005)
Published in IEEE electron device letters (01.11.2005)
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Journal Article
Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures
Zhang, Z., Cardwell, D., Sasikumar, A., Kyle, E. C. H., Chen, J., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Speck, J. S., Arehart, A. R., Ringel, S. A.
Published in Journal of applied physics (28.04.2016)
Published in Journal of applied physics (28.04.2016)
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Journal Article
Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts
Leonard, J. T., Cohen, D. A., Yonkee, B. P., Farrell, R. M., DenBaars, S. P., Speck, J. S., Nakamura, S.
Published in Journal of applied physics (14.10.2015)
Published in Journal of applied physics (14.10.2015)
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Journal Article
High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells
Gelžinytė, K., Ivanov, R., Marcinkevičius, S., Zhao, Y., Becerra, D. L., Nakamura, S., DenBaars, S. P., Speck, J. S.
Published in Journal of applied physics (14.01.2015)
Published in Journal of applied physics (14.01.2015)
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Journal Article
Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition
Liu, X., Kim, J., Yeluri, R., Lal, S., Li, H., Lu, J., Keller, S., Mazumder, B., Speck, J. S., Mishra, U. K.
Published in Journal of applied physics (28.10.2013)
Published in Journal of applied physics (28.10.2013)
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Journal Article
Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition
Liu, X., Jackson, C. M., Wu, F., Mazumder, B., Yeluri, R., Kim, J., Keller, S., Arehart, A. R., Ringel, S. A., Speck, J. S., Mishra, U. K.
Published in Journal of applied physics (07.01.2016)
Published in Journal of applied physics (07.01.2016)
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Journal Article
Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs
Sasikumar, A., Arehart, A., Kolluri, S., Wong, M. H., Keller, S., DenBaars, S. P., Speck, J. S., Mishra, U. K., Ringel, S. A.
Published in IEEE electron device letters (01.05.2012)
Published in IEEE electron device letters (01.05.2012)
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Journal Article
Progress in the growth of nonpolar gallium nitride
Haskell, B. A., Nakamura, S., DenBaars, S. P., Speck, J. S.
Published in Physica Status Solidi (b) (01.08.2007)
Published in Physica Status Solidi (b) (01.08.2007)
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Journal Article
Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
Heying, B., Averbeck, R., Chen, L. F., Haus, E., Riechert, H., Speck, J. S.
Published in Journal of applied physics (15.08.2000)
Published in Journal of applied physics (15.08.2000)
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