AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 μA/μm at 0.5 V
RUI LI, YEQING LU, WISTEY, Mark, HUILI XING, SEABAUGH, Alan, GUANGLE ZHOU, QINGMIN LIU, DOO CHAE, Soo, VASEN, Tim, SIK HWANG, Wan, QIN ZHANG, FAY, Patrick, KOSEL, Tom
Published in IEEE electron device letters (01.03.2012)
Published in IEEE electron device letters (01.03.2012)
Get full text
Journal Article
Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned
Yeqing Lu, Guangle Zhou, Rui Li, Qingmin Liu, Qin Zhang, Vasen, T., Soo Doo Chae, Kosel, T., Wistey, M., Huili Xing, Seabaugh, A., Fay, P.
Published in IEEE electron device letters (01.05.2012)
Published in IEEE electron device letters (01.05.2012)
Get full text
Journal Article
Fabrication and program/erase characteristics of 30-nm SONOS nonvolatile memory devices
Sung, Suk-Kang, Park, Il-Han, Lee, Chang Ju, Lee, Yong Kyu, Lee, Jong Duk, Park, Byung-Gook, Chae, Soo Doo, Kim, Chung Woo
Published in IEEE transactions on nanotechnology (01.12.2003)
Published in IEEE transactions on nanotechnology (01.12.2003)
Get full text
Journal Article
Conference Proceeding
AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 \mu\hbox/\mu\hbox at 0.5 V
Rui Li, Yeqing Lu, Guangle Zhou, Qingmin Liu, Soo Doo Chae, Vasen, T., Wan Sik Hwang, Qin Zhang, Fay, P., Kosel, T., Wistey, M., Huili Xing, Seabaugh, A.
Published in IEEE electron device letters (01.03.2012)
Published in IEEE electron device letters (01.03.2012)
Get full text
Journal Article
Single-Electron MOS Memory with a Defined Quantum Dot Based on Conventional VLSI Technology
Sung, Suk-Kang, Kim, Dae Hwan, Sim, Jae-Sung, Kim, Kyung Rok, Lee, Yong Kyu, Lee, Jong Duk, Chae, Soo Doo, Kim, Byung Man, Park, Byung-Gook
Published in Japanese Journal of Applied Physics (01.04.2002)
Published in Japanese Journal of Applied Physics (01.04.2002)
Get full text
Journal Article
The impact of work-function of metal gate and fixed oxide charge of high-k blocking dielectric on memory properties of NAND type charge trap flash memory devices
Sanghun Jeon, Jeong Hee Han, Junghoon Lee, Jaewoong Hyun, Ju Hyung Kim, Jeong, Y.S., Hee Soon Chae, Soo Doo Chae, Kim, M.K., Lee, J.-W., Sangmoo Choi, Man Jang, Hyunsang Hwang, Chungwoo Kim
Published in 63rd Device Research Conference Digest, 2005. DRC '05 (2005)
Published in 63rd Device Research Conference Digest, 2005. DRC '05 (2005)
Get full text
Conference Proceeding
In-Situ Electrical Study of a Reversible Surface Modification and a Nanomachining of Gold Microstrips by the Voltage-Biased Atomic Force Microscope Tip in Air
Kim, Byong Man, Min, Yo-Sep, Lee, Nae Sung, Sok, Jung Hyun, Kim, Moon Kyung, Chae, Soo Doo, Ryu, Won Il, Chae, Hee Soon
Published in Japanese Journal of Applied Physics (01.06.2001)
Published in Japanese Journal of Applied Physics (01.06.2001)
Get full text
Journal Article
InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field
Li, Rui, Lu, Yeqing, Chae, Soo Doo, Zhou, Guangle, Liu, Qingmin, Chen, Chen, Shahriar Rahman, M., Vasen, Tim, Zhang, Qin, Fay, Patrick, Kosel, Tom, Wistey, Mark, Xing, Huili (Grace), Koswatta, Siyuranga, Seabaugh, Alan
Published in Physica status solidi. C (01.02.2012)
Published in Physica status solidi. C (01.02.2012)
Get full text
Journal Article
The Effects of ONO thickness on Memory Characteristics in Nano-scale Charge Trapping Devices
Moon Kyung Kim, Soo Doo Chae, Chung Woo Kim, Jooyeon Kim, Tiwari, S.
Published in 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (01.04.2007)
Published in 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (01.04.2007)
Get full text
Conference Proceeding
First demonstration of two-dimensional WS2 transistors exhibiting 105 room temperature modulation and ambipolar behavior
Wan Sik Hwang, Remskar, M., Rusen Yan, Protasenko, V., Tahy, K., Soo Doo Chae, Huili Xing, Seabaugh, A., Jena, D.
Published in 70th Device Research Conference (01.06.2012)
Published in 70th Device Research Conference (01.06.2012)
Get full text
Conference Proceeding