Channel Coupling phenomenon as scaling barrier of NAND flash memory beyond 20nm node
ChangHyun Lee, Jiyeong Hwang, Fayrushin, Albert, Hyunjung Kim, Byoungkeun Son, Youngwoo Park, Gyoyoung Jin, Eunseung Jung
Published in 2013 5th IEEE International Memory Workshop (01.05.2013)
Published in 2013 5th IEEE International Memory Workshop (01.05.2013)
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Conference Proceeding
Semiconductor device including a stack having a sidewall with recessed and protruding portions
Hyun, Chung-Il, Kim, Hyunjung, Son, Byoungkeun, Lee, Changhyun, Shin, Yoocheol
Year of Publication 14.09.2021
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Year of Publication 14.09.2021
Patent