Solution-Processable LaZrO x /SiO 2 Gate Dielectric at Low Temperature of 180 °C for High-Performance Metal Oxide Field-Effect Transistors
Je, So Yeon, Son, Byeong-Geun, Kim, Hyun-Gwan, Park, Man-Young, Do, Lee-Mi, Choi, Rino, Jeong, Jae Kyeong
Published in ACS applied materials & interfaces (12.11.2014)
Published in ACS applied materials & interfaces (12.11.2014)
Get full text
Journal Article
Solution-Processable LaZrO x /SiO2 Gate Dielectric at Low Temperature of 180 °C for High-Performance Metal Oxide Field-Effect Transistors
Je, So Yeon, Son, Byeong-Geun, Kim, Hyun-Gwan, Park, Man-Young, Do, Lee-Mi, Choi, Rino, Jeong, Jae Kyeong
Published in ACS applied materials & interfaces (12.11.2014)
Published in ACS applied materials & interfaces (12.11.2014)
Get full text
Journal Article