Manufacturable 22nm FD-SOI Embedded MRAM Technology for Industrial-grade MCU and IOT Applications
Naik, V. B., Lim, J. H., Lee, T. Y., Neo, W. P., Dixit, H., K, S., Goh, L. C., Ling, T., Hwang, J., Zeng, D., Ting, J. W., Lee, K., Toh, E. H., Zhang, L., Low, R., Balasankaran, N., Zhang, L. Y., Gan, K. W., Hau, L. Y., Mueller, J., Pfefferling, B., Kallensee, O., Yamane, K., Tan, S. L., Seet, C. S., You, Y. S., Woo, S. T., Quek, E., Siah, S. Y., Pellerin, J., Chao, R., Kwon, J., Thiyagarajah, N., Chung, N. L., Jang, S. H., Behin-Aein, B.
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
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Conference Proceeding
Selection of gate length and gate bias to make nanoscale metal–oxide-semiconductor transistors less sensitive to both statistical gate length variation and temperature variation
Yang, Peizhen, Lau, W.S., Lai, Seow Wei, Lo, V.L., Siah, S.Y., Chan, L.
Published in Solid-state electronics (01.11.2010)
Published in Solid-state electronics (01.11.2010)
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Journal Article
Observation of halo implant from the drain side reaching the source side and vice versa in extremely short p-channel transistors
Lau, W.S., Yang, Peizhen, Lim, Eng Hua, Tang, Yee Ling, Lai, Seow Wei, Lo, V.L., Siah, S.Y., Chan, L.
Published in Microelectronics and reliability (01.03.2010)
Published in Microelectronics and reliability (01.03.2010)
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Journal Article
Extended MTJ TDDB Model, and Improved STT-MRAM Reliability With Reduced Circuit and Process Variabilities
Naik, V. B., Lim, J. H., Yamane, K., Kwon, J., B., Behin-Aein, Chung, N. L., K, S., Hau, L. Y., Chao, R., Chiang, C., Huang, Y., Pu, L., Otani, Y., Jang, S.H., Balasankaran, N., Neo, W. P., Ling, T., Ting, J. W., Yoon, H., Mueller, J., Pfefferling, B., Kallensee, O., Merbeth, T., Seet, C.S., Wong, J., You, Y. S., Soss, S., Chan, T. H., Siah, S. Y.
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
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Conference Proceeding
Magnetic Immunity Guideline for Embedded MRAM Reliability to Realize Mass Production
Lee, T. Y., Yamane, K., Hau, L. Y., Chao, R., Chung, N. L., Naik, V. B., Sivabalan, K., Kwon, J., Lim, J. H., Neo, W. P., Khua, K., Thiyagarajah, N., Jang, S. H., Behin-Aein, B., Toh, E. H., Otani, Y., Zeng, D., Balasankaran, N., Goh, L. C., Ling, T., Hwang, J., Zhang, L., Low, R., Tan, S. L, Seet, C. S., Ting, J. W., Ong, S., You, Y. S., Woo, S. T., Quek, E., Siah, S. Y.
Published in 2020 IEEE International Reliability Physics Symposium (IRPS) (01.04.2020)
Published in 2020 IEEE International Reliability Physics Symposium (IRPS) (01.04.2020)
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Conference Proceeding
A Reliable TDDB Lifetime Projection Model Verified Using 40Mb STT-MRAM Macro at Sub-ppm Failure Rate To Realize Unlimited Endurance for Cache Applications
Naik, V. B., Yamane, K., Lim, J. H., Lee, T. Y., Kwon, J., Aein, Behin, Chung, N. L., Hau, L. Y., Chao, R., Zeng, D., Otani, Y., Chiang, C, Huang, Y., Pu, L., Thiyagarajah, N., Jang, S. H., Neo, W. P., Dixit, H., Aris, S.K, Goh, L. C., Ling, T., Hwang, J., Ting, J. W., Zhang, L., Low, R., Balasankaran, N., Seet, C. S., Ong, S., Wong, J., You, Y. S., Woo, S. T., Siah, S. Y.
Published in 2020 IEEE Symposium on VLSI Technology (01.06.2020)
Published in 2020 IEEE Symposium on VLSI Technology (01.06.2020)
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Conference Proceeding
Fast Switching of STT-MRAM to Realize High Speed Applications
Lee, T. Y., Yamane, K., Kwon, J., Naik, V. B., Otani, Y., Zeng, D., Lim, J. H., Sivabalan, K., Chiang, C., Huang, Y., Jang, S. H., Hau, L. Y., Chao, R., Chung, N. L., Neo, W. P., Khua, K., Thiyagarajah, N., Ling, T., Goh, L. C., Hwang, J., Zhang, L., Low, R., Balasankaran, N., Tan, F., Wong, J., Seet, C. S., Ting, J. W., Ong, S., You, Y. S., Woo, S. T., Siah, S. Y.
Published in 2020 IEEE Symposium on VLSI Technology (01.06.2020)
Published in 2020 IEEE Symposium on VLSI Technology (01.06.2020)
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Conference Proceeding
Effects of switching from [left angle bracket]1 1 0[right-pointing angle bracket] to [left angle bracket]1 0 0[right-pointing angle bracket] channel orientation and tensile stress on n-channel and p-channel metal-oxide-semiconductor transistors
Yang, Peizhen, Lau, W S, Lai, Seow Wei, Lo, V L, Siah, SY, Chan, L
Published in Solid-state electronics (01.04.2010)
Published in Solid-state electronics (01.04.2010)
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Journal Article
Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors
LAU, W. S, PEIZHEN YANG, JASON ZHIWEI CHIAN, HU, V, LOH, C. H, SIAH, S. Y, CHAN, L
Published in Microelectronics and reliability (2009)
Published in Microelectronics and reliability (2009)
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Journal Article
An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 μm metal–oxide–semiconductor transistors by quasi-ballistic transport theory
Lau, W.S., Yang, Peizhen, Ho, V., Toh, L.F., Liu, Y., Siah, S.Y., Chan, L.
Published in Microelectronics and reliability (01.10.2008)
Published in Microelectronics and reliability (01.10.2008)
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Journal Article
Void formation in titanium desilicide/p + silicon interface: impact on junction leakage and silicide sheet resistance
Pey, K.L, Sundaresan, R, Wong, H, Siah, S.Y, Tung, C.H
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.05.2000)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.05.2000)
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Journal Article
Conference Proceeding
JEDEC-Qualified Highly Reliable 22nm FD-SOI Embedded MRAM For Low-Power Industrial-Grade, and Extended Performance Towards Automotive-Grade-1 Applications
Naik, V. B., Yamane, K., Lee, T.Y., Kwon, J., Chao, R., Lim, J.H., Chung, N.L., Behin-Aein, B., Hau, L.Y., Zeng, D., Otani, Y., Chiang, C., Huang, Y., Pu, L., Jang, S.H., Neo, W.P., Dixit, H., Goh, S. K L. C., Toh, E. H., Ling, T., Hwang, J., Ting, J.W., Low, R., Zhang, L., Lee, C.G., Balasankaran, N., Tan, F., Gan, K. W., Yoon, H., Congedo, G., Mueller, J., Pfefferling, B., Kallensee, O., Vogel, A., Kriegerstein, V., Merbeth, T., Seet, C.S., Ong, S., Xu, J., Wong, J., You, Y.S., Woo, S.T., Chan, T.H., Quek, E., Siah, S. Y.
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
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Conference Proceeding
Advanced MTJ Stack Engineering of STT-MRAM to Realize High Speed Applications
Lee, T. Y., Yamane, K., Otani, Y., Zeng, D., Kwon, J., Lim, J. H., Naik, V. B., Hau, L. Y., Chao, R., Chung, N. L., Ling, T., Jang, S. H., Goh, L. C., Hwang, J., Zhang, L., Low, R., Balasankaran, N., Tan, F., Ting, J. W., Chang, J., Seet, C. S., Ong, S., You, Y. S., Woo, S. T., Chan, T. H., Siah, S. Y.
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
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Conference Proceeding
22-nm FD-SOI Embedded MRAM with Full Solder Reflow Compatibility and Enhanced Magnetic Immunity
Lee, K., Yamane, K., Noh, S., Naik, V. B., Yang, H., Jang, S. H., Kwon, J., Behin-Aein, B., Chao, R., Lim, J. H., S. K., Gan, K. W., Zeng, D., Thiyagarajah, N., Goh, L. C., Liu, B., Toh, E. H., Jung, B., Wee, T. L., Ling, T., Chan, T. H., Chung, N. L., Ting, J. W., Lakshmipathi, S., Son, J. S., Hwang, J., Zhang, L., Low, R., Krishnan, R., Kitamura, T., You, Y. S., Seet, C. S., Cong, H., Shum, D., Wong, J., Woo, S. T., Lam, J., Quek, E., See, A., Siah, S. Y.
Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)
Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)
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Conference Proceeding
CMOS-embedded STT-MRAM arrays in 2x nm nodes for GP-MCU applications
Shum, D., Houssameddine, D., Woo, S. T., You, Y. S., Wong, J., Wong, K. W., Wang, C. C., Lee, K. H., Yamane, K., Naik, V. B., Seet, C. S., Tahmasebi, T., Hai, C., Yang, H. W., Thiyagarajah, N., Chao, R., Ting, J. W., Chung, N. L., Ling, T., Chan, T. H., Siah, S. Y., Nair, R., Deshpande, S., Whig, R., Nagel, K., Aggarwal, S., DeHerrera, M., Janesky, J., Lin, M., Chia, H-J, Hossain, M., Lu, H., Ikegawa, S., Mancoff, F. B., Shimon, G., Slaughter, J. M., Sun, J. J., Tran, M., Alam, S. M., Andre, T.
Published in 2017 Symposium on VLSI Technology (01.06.2017)
Published in 2017 Symposium on VLSI Technology (01.06.2017)
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Conference Proceeding
Functionality Demonstration of a High-Density 2.5V Self-Aligned Split-Gate NVM Cell Embedded into 40nm CMOS Logic Process for Automotive Microcontrollers
Luo, L. Q., Teo, Z. Q., Kong, Y. J., Deng, F. X., Liu, J. Q., Zhang, F., Cai, X. S., Tan, K. M., Lim, K. Y., Khoo, P., Jung, S. M., Siah, S. Y., Shum, D., Wang, C. M., Xing, J. C., Liu, G. Y., Diao, Y., Lin, G. M., Tee, L., Lemke, S. M., Ghazavi, P., Liu, X., Do, N., Pey, K. L., Shubhakar, K.
Published in 2016 IEEE 8th International Memory Workshop (IMW) (01.05.2016)
Published in 2016 IEEE 8th International Memory Workshop (IMW) (01.05.2016)
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Conference Proceeding
STT-MRAM: A Robust Embedded Non-Volatile Memory with Superior Reliability and Immunity to External Magnetic Field and RF Sources
Naik, V. B., Yamane, K., Kwon, J., K, S., Lim, J. H., Ali, Z., Behin-Aein, B., Chung, N. L., Hau, L. Y., Chao, R., Chiang, C., Huang, Y., Pu, L., Otani, Y., Dixit, H., Jang, S. H., Balasankaran, N., Tan, F., Neo, W. P., Goh, L. C., Toh, E. H., Ling, T., Ting, J. W., Yoon, H., Congedo, G., Mueller, J., Pfefferling, B., Kallensee, O., Vogel, A., Merbeth, T., Seet, C. S., Wong, J., Bordelon, J., You, Y. S., Soss, S., Chan, T. H., Quek, E., Siah, S. Y.
Published in 2021 Symposium on VLSI Technology (13.06.2021)
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Published in 2021 Symposium on VLSI Technology (13.06.2021)
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