Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors
Oishi, Toshiyuki, Shiozawa, Katsuomi, Furukawa, Akihiko, Abe, Yuji, Tokuda, Yasunori
Published in Japanese Journal of Applied Physics (15.07.1998)
Published in Japanese Journal of Applied Physics (15.07.1998)
Get full text
Journal Article
Remarkable Effects of Introduction of SiON Materials into Shallow Trench Isolation Fabrication Process on Metal-Oxide-Semiconductor Field-Effect Transistors
Shiozawa, Katsuomi, Oishi, Toshiyuki, Abe, Yuji, Tokuda, Yasunori
Published in Japanese Journal of Applied Physics (2001)
Published in Japanese Journal of Applied Physics (2001)
Get full text
Journal Article
Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts
Nanjo, Takuma, Motoya, Tsukasa, Imai, Akihumi, Suzuki, Yosuke, Shiozawa, Katsuomi, Suita, Muneyoshi, Oishi, Toshiyuki, Abe, Yuji, Yagyu, Eiji, Yoshiara, Kiichi, Tokuda, Yasunori
Published in Japanese Journal of Applied Physics (01.06.2011)
Published in Japanese Journal of Applied Physics (01.06.2011)
Get full text
Journal Article
Narrow-channel metal oxide semiconductor field effect transistor (MOSFET) isolated by an ultra-fine trench
OISHI, T, SHIOZAWA, K, FURUKAWA, A, ABE, Y, TOKUDA, Y
Published in Japanese Journal of Applied Physics (01.05.1997)
Published in Japanese Journal of Applied Physics (01.05.1997)
Get full text
Journal Article
Electrical characteristics of ultra-fine trench isolation fabricated by a new two-step filling process
SHIOZAWA, K, OISHI, T, MAEDA, H, MURAKAMI, T.-A, YASUMURA, K, ABE, Y, TOKUDA, Y
Published in Japanese Journal of Applied Physics (01.12.1996)
Published in Japanese Journal of Applied Physics (01.12.1996)
Get full text
Journal Article
Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts
Nanjo, Takuma, Motoya, Tsukasa, Imai, Akihumi, Suzuki, Yosuke, Shiozawa, Katsuomi, Suita, Muneyoshi, Oishi, Toshiyuki, Abe, Yuji, Yagyu, Eiji, Yoshiara, Kiichi, Tokuda, Yasunori
Published in Japanese Journal of Applied Physics (01.06.2011)
Published in Japanese Journal of Applied Physics (01.06.2011)
Get full text
Journal Article
Successful enhancement of lifetime for SiO2 on 4H-SiC by N2O anneal
FUJIHIRA, Keiko, MIURA, Naruhisa, SHIOZAWA, Katsuomi, IMAIZUMI, Masayuki, OHTSUKA, Ken-Ichi, TAKAMI, Tetsuya
Published in IEEE electron device letters (01.11.2004)
Published in IEEE electron device letters (01.11.2004)
Get full text
Journal Article
Isolation edge effect depending on gate length of MOSFETs with various isolation structures
Oishi, T., Shiozawa, K., Furukawa, A., Abe, Y., Tokuda, Y.
Published in IEEE transactions on electron devices (01.04.2000)
Published in IEEE transactions on electron devices (01.04.2000)
Get full text
Journal Article
MANUFACTURE OF FABRICATING SEMICONDUCTOR DEVICE
NAKAMURA, KATSUMI, MINATO, TADAHARU, TOMINAGA, SHUUICHI, SHIOZAWA, KATSUOMI
Year of Publication 01.06.1999
Get full text
Year of Publication 01.06.1999
Patent
Simulation study on comparison between metal gate and polysilicon gate for sub-quarter-micron MOSFETs
Abe, Y., Oishi, T., Shiozawa, K., Tokuda, Y., Satoh, S.
Published in IEEE electron device letters (01.12.1999)
Published in IEEE electron device letters (01.12.1999)
Get full text
Journal Article