Removal of Side-gating Effects in GaAs Quantum Nanodevices with Nano-Schottky Gates by Surface Passivation Using Si Interface Control Layer
Jia, Rui, Shiozaki, Nanako, Kasai, Seiya, Hasegawa, Hideki
Published in E-journal of surface science and nanotechnology (01.01.2005)
Published in E-journal of surface science and nanotechnology (01.01.2005)
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Journal Article
Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth
Nakazawa, Satoshi, Shiozaki, Nanako, Negoro, Noboru, Tsurumi, Naohiro, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo
Published in Japanese Journal of Applied Physics (01.09.2017)
Published in Japanese Journal of Applied Physics (01.09.2017)
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Journal Article
Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation
Shiozaki, Nanako, Anantathanasarn, Sanguan, Sato, Taketomo, Hashizume, Tamotsu, Hasegawa, Hideki
Published in Applied surface science (15.05.2005)
Published in Applied surface science (15.05.2005)
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Journal Article
Conference Proceeding
High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates
Handa, Hiroyuki, Ujita, Shinji, Shibata, Daisuke, Kajitani, Ryo, Shiozaki, Nanako, Ogawa, Masahiro, Umeda, Hidekazu, Tanaka, Kenichiro, Tamura, Satoshi, Hatsuda, Tsuguyasu, Ishida, Masahiro, Ueda, Tetsuzo
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
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Conference Proceeding