Mapping of Au/a‐IGZO Schottky contacts by using scanning internal photoemission microscopy
Shiojima, Kenji, Shingo, Masato
Published in Physica Status Solidi. B: Basic Solid State Physics (01.02.2017)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.02.2017)
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Journal Article
Estimation of uniformity in Schottky contacts between printed Ni electrode and n-GaN by scanning internal photoemission microscopy
Shiojima, Kenji, Kawasumi, Yuto, Yasui, Yuto, Kashiwagi, Yukiyasu, Tamai, Toshiyuki
Published in Japanese Journal of Applied Physics (01.08.2022)
Published in Japanese Journal of Applied Physics (01.08.2022)
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Journal Article
Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates: Metal work function dependence of Schottky barrier height
Imadate, Hiroyoshi, Mishima, Tomoyoshi, Shiojima, Kenji
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
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Journal Article
Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy
Imabayashi, Hiroki, Yasui, Yuto, Horikiri, Fumimasa, Narita, Yoshinobu, Fukuhara, Noboru, Mishima, Tomoyoshi, Shiojima, Kenji
Published in Japanese Journal of Applied Physics (01.01.2023)
Published in Japanese Journal of Applied Physics (01.01.2023)
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Journal Article
Deep-level transient spectroscopy of low-free-carrier-concentration n-GaN layers grown on freestanding GaN substrates: Dependence on carbon compensation ratio
Tanaka, Takeshi, Shiojima, Kenji, Mishima, Tomoyoshi, Tokuda, Yutaka
Published in Japanese Journal of Applied Physics (01.06.2016)
Published in Japanese Journal of Applied Physics (01.06.2016)
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Journal Article
Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes
Shiojima, Kenji, Tanaka, Ryo, Takashima, Shinya, Ueno, Katsunori, Edo, Masaharu
Published in Japanese Journal of Applied Physics (01.05.2021)
Published in Japanese Journal of Applied Physics (01.05.2021)
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Journal Article
Roles of lightly doped carbon in the drift layers of vertical n-GaN Schottky diode structures on freestanding GaN substrates
Tanaka, Takeshi, Kaneda, Naoki, Mishima, Tomoyoshi, Kihara, Yuhei, Aoki, Toshichika, Shiojima, Kenji
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
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Journal Article
Mapping of contactless photoelectrochemical etched GaN Schottky contacts using scanning internal photoemission microscopy—difference in electrolytes
Shiojima, Kenji, Matsuda, Ryo, Horikiri, Fumimasa, Narita, Yoshinobu, Fukuhara, Noboru, Mishima, Tomoyoshi
Published in Japanese Journal of Applied Physics (01.05.2022)
Published in Japanese Journal of Applied Physics (01.05.2022)
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Journal Article
Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples
Matsuda, Ryo, Horikiri, Fumimasa, Narita, Yoshinobu, Yoshida, Takehiro, Fukuhara, Noboru, Mishima, Tomoyoshi, Shiojima, Kenji
Published in Japanese Journal of Applied Physics (01.05.2021)
Published in Japanese Journal of Applied Physics (01.05.2021)
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Journal Article