MEMORY SYSTEM
SHIBAZAKI KENTA, HIRASHIMA YASUTAKA, SHINDO YOSHIHIKO, HAGIWARA YOSUKE, NAKAMURA MASARU, NAGASAKA SHIGEKI, SUGAWARA AKIO
Year of Publication 29.09.2023
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Year of Publication 29.09.2023
Patent
A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology
Maejima, Hiroshi, Kanda, Kazushige, Fujimura, Susumu, Takagiwa, Teruo, Ozawa, Susumu, Sato, Jumpei, Shindo, Yoshihiko, Sato, Manabu, Kanagawa, Naoaki, Musha, Junji, Inoue, Satoshi, Sakurai, Katsuaki, Morozumi, Naohito, Fukuda, Ryo, Shimizu, Yuui, Hashimoto, Toshifumi, Xu Li, Shimizu, Yuuki, Abe, Kenichi, Yasufuku, Tadashi, Minamoto, Takatoshi, Yoshihara, Hiroshi, Yamashita, Takahiro, Satou, Kazuhiko, Sugimoto, Takahiro, Kono, Fumihiro, Abe, Mitsuhiro, Hashiguchi, Tomoharu, Kojima, Masatsugu, Suematsu, Yasuhiro, Shimizu, Takahiro, Imamoto, Akihiro, Kobayashi, Naoki, Miakashi, Makoto, Yamaguchi, Kouichirou, Bushnaq, Sanad, Haibi, Hicham, Ogawa, Masatsugu, Ochi, Yusuke, Kubota, Kenro, Wakui, Taichi, Dong He, Weihan Wang, Minagawa, Hiroe, Nishiuchi, Tomoko, Hao Nguyen, Kwang-Ho Kim, Ken Cheah, Yee Koh, Feng Lu, Ramachandra, Venky, Rajendra, Srinivas, Choi, Steve, Payak, Keyur, Raghunathan, Namas, Georgakis, Spiros, Sugawara, Hiroshi, Seungpil Lee, Futatsuyama, Takuya, Hosono, Koji, Shibata, Noboru, Hisada, Toshiki, Kaneko, Tetsuya, Nakamura, Hiroshi
Published in 2018 IEEE International Solid - State Circuits Conference - (ISSCC) (01.02.2018)
Published in 2018 IEEE International Solid - State Circuits Conference - (ISSCC) (01.02.2018)
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Conference Proceeding
SEMICONDUCTOR STORAGE DEVICE AND MEMORY SYSTEM
YAMAMURA TOSHIO, SHINDO YOSHIHIKO, UTSUNOMIYA YUKO, SHIMIZU TAKAHIRO, SUGAWARA AKIO
Year of Publication 22.03.2018
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Year of Publication 22.03.2018
Patent
A 151-mm ^ 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology
Fukuda, K., Watanabe, Y., Makino, E., Kawakami, K., Sato, J., Takagiwa, T., Kanagawa, N., Shiga, H., Tokiwa, N., Shindo, Y., Ogawa, T., Edahiro, T., Iwai, M., Nagao, O., Musha, J., Minamoto, T., Furuta, Y., Yanagidaira, K., Suzuki, Y., Nakamura, D., Hosomura, Y., Tanaka, R., Komai, H., Muramoto, M., Shikata, G., Yuminaka, A., Sakurai, K., Sakai, M., Hong Ding, Watanabe, M., Kato, Y., Miwa, T., Mak, A., Nakamichi, M., Hemink, G., Lee, D., Higashitani, M., Murphy, B., Bo Lei, Matsunaga, Y., Naruke, K., Hara, T.
Published in IEEE journal of solid-state circuits (01.01.2012)
Published in IEEE journal of solid-state circuits (01.01.2012)
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Journal Article
A 151-mm 2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology
Fukuda, Koichi, Watanabe, Yoshihisa, Makino, Eiichi, Kawakami, Koichi, Sato, Jumpei, Takagiwa, Teruo, Kanagawa, Naoaki, Shiga, Hitoshi, Tokiwa, Naoya, Shindo, Yoshihiko, Ogawa, Takeshi, Edahiro, Toshiaki, Iwai, Makoto, Nagao, Osamu, Musha, Junji, Minamoto, Takatoshi, Furuta, Yuka, Yanagidaira, Kosuke, Suzuki, Yuya, Nakamura, Dai, Hosomura, Yoshikazu, Tanaka, Rieko, Komai, Hiromitsu, Muramoto, Mai, Shikata, Go, Yuminaka, Ayako, Sakurai, Kiyofumi, Sakai, Manabu, Ding, Hong, Watanabe, Mitsuyuki, Kato, Yosuke, Miwa, Toru, Mak, Alexander, Nakamichi, Masaru, Hemink, Gertjan, Lee, Dana, Higashitani, Masaaki, Murphy, Brian, Lei, Bo, Matsunaga, Yasuhiko, Naruke, Kiyomi, Hara, Takahiko
Published in IEEE journal of solid-state circuits (01.01.2012)
Published in IEEE journal of solid-state circuits (01.01.2012)
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Journal Article