Oxygen-vacancy defect in 4H-SiC as a near-infrared emitter: An ab initio study
Kobayashi, Takuma, Shimura, Takayoshi, Watanabe, Heiji
Published in Journal of applied physics (14.10.2023)
Published in Journal of applied physics (14.10.2023)
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Journal Article
Interface and oxide trap states of SiO2/GaN metal–oxide–semiconductor capacitors and their effects on electrical properties evaluated by deep level transient spectroscopy
Ogawa, Shingo, Mizobata, Hidetoshi, Kobayashi, Takuma, Shimura, Takayoshi, Watanabe, Heiji
Published in Journal of applied physics (07.09.2023)
Published in Journal of applied physics (07.09.2023)
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Journal Article
Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient
Yamada, Takahiro, Ito, Joyo, Asahara, Ryohei, Watanabe, Kenta, Nozaki, Mikito, Nakazawa, Satoshi, Anda, Yoshiharu, Ishida, Masahiro, Ueda, Tetsuzo, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Journal of applied physics (21.01.2017)
Published in Journal of applied physics (21.01.2017)
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Journal Article
Oxygen-related defects in 4H-SiC from first principles
Iwamoto, Sosuke, Shimura, Takayoshi, Watanabe, Heiji, Kobayashi, Takuma
Published in Applied physics express (01.05.2024)
Published in Applied physics express (01.05.2024)
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Journal Article
Probing the surface potential of SiO2/4H-SiC(0001) by terahertz emission spectroscopy
Nakanishi, Hidetoshi, Nishimura, Tatsuhiko, Kawayama, Iwao, Tonouchi, Masayoshi, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Journal of applied physics (21.09.2021)
Published in Journal of applied physics (21.09.2021)
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Journal Article
Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures
Onishi, Kentaro, Nakanuma, Takato, Tahara, Kosuke, Kutsuki, Katsuhiro, Shimura, Takayoshi, Watanabe, Heiji, Kobayashi, Takuma
Published in Applied physics express (01.05.2024)
Published in Applied physics express (01.05.2024)
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Journal Article
Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth
Mizobata, Hidetoshi, Nozaki, Mikito, Kobayashi, Takuma, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Japanese Journal of Applied Physics (01.05.2022)
Published in Japanese Journal of Applied Physics (01.05.2022)
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Journal Article
Study of SiO2/4H-SiC interface nitridation by post-oxidation annealing in pure nitrogen gas
Chanthaphan, Atthawut, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in AIP advances (01.09.2015)
Published in AIP advances (01.09.2015)
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Journal Article
Controlled oxide interlayer for improving reliability of SiO2/GaN MOS devices
Yamada, Takahiro, Terashima, Daiki, Nozaki, Mikito, Yamada, Hisashi, Takahashi, Tokio, Shimizu, Mitsuaki, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Impact of nitridation on the reliability of 4H-SiC(112̄0) MOS devices
Nakanuma, Takato, Kobayashi, Takuma, Hosoi, Takuji, Sometani, Mitsuru, Okamoto, Mitsuo, Yoshigoe, Akitaka, Shimura, Takayoshi, Watanabe, Heiji
Published in Applied physics express (01.04.2022)
Published in Applied physics express (01.04.2022)
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Journal Article
Toward Super Temporal Resolution by Suppression of Mixing Effects of Electrons
Ngo, Nguyen Hoai, Etoh, Takeharu Goji, Shimonomura, Kazuhiro, Ando, Taeko, Matsunaga, Yoshiyuki, Shimura, Takayoshi, Watanabe, Heiji, Mutoh, Hideki, Kamakura, Yoshinari, Charbon, Edoardo
Published in IEEE transactions on electron devices (01.06.2022)
Published in IEEE transactions on electron devices (01.06.2022)
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Journal Article
Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors
Hosoi, Takuji, Ohsako, Momoe, Moges, Kidist, Ito, Koji, Kimoto, Tsunenobu, Sometani, Mitsuru, Okamoto, Mitsuo, Yoshigoe, Akitaka, Shimura, Takayoshi, Watanabe, Heiji
Published in Applied physics express (01.06.2022)
Published in Applied physics express (01.06.2022)
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Journal Article
Demonstration of mm long nearly intrinsic GeSn single-crystalline wires on quartz substrate fabricated by nucleation-controlled liquid-phase crystallization
Wada, Youki, Inoue, Keitaro, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Japanese Journal of Applied Physics (01.04.2019)
Published in Japanese Journal of Applied Physics (01.04.2019)
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Journal Article
Evaluation and mitigation of reactive ion etching-induced damage in AlGaN/GaN MOS structures fabricated by low-power inductively coupled plasma
Nozaki, Mikito, Terashima, Daiki, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji
Published in Japanese Journal of Applied Physics (01.07.2020)
Published in Japanese Journal of Applied Physics (01.07.2020)
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Journal Article
Toward the Super Temporal Resolution Image Sensor with a Germanium Photodiode for Visible Light
Ngo, Nguyen Hoai, Nguyen, Anh Quang, Bufler, Fabian M., Kamakura, Yoshinari, Mutoh, Hideki, Shimura, Takayoshi, Hosoi, Takuji, Watanabe, Heiji, Matagne, Philippe, Shimonomura, Kazuhiro, Takehara, Kohsei, Charbon, Edoardo, Etoh, Takeharu Goji
Published in Sensors (Basel, Switzerland) (02.12.2020)
Published in Sensors (Basel, Switzerland) (02.12.2020)
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