A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate
Jeong, Woopyo, Im, Jae-woo, Kim, Doo-Hyun, Nam, Sang-Wan, Shim, Dong-Kyo, Choi, Myung-Hoon, Yoon, Hyun-Jun, Kim, Dae-Han, Kim, You-Se, Park, Hyun-Wook, Kwak, Dong-Hun, Park, Sang-Won, Yoon, Seok-Min, Hahn, Wook-Ghee, Ryu, Jin-Ho, Shim, Sang-Won, Kang, Kyung-Tae, Ihm, Jeong-Don, Kim, In-Mo, Lee, Doo-Sub, Cho, Ji-Ho, Kim, Moo-Sung, Jang, Jae-Hoon, Hwang, Sang-Won, Byeon, Dae-Seok, Yang, Hyang-Ja, Park, Kitae, Kyung, Kye-Hyun, Choi, Jeong-Hyuk
Published in IEEE journal of solid-state circuits (01.01.2016)
Published in IEEE journal of solid-state circuits (01.01.2016)
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Journal Article
Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming
Ki-Tae Park, Sangwan Nam, Daehan Kim, Pansuk Kwak, Doosub Lee, Yoon-He Choi, Myung-Hoon Choi, Dong-Hun Kwak, Doo-Hyun Kim, Min-Su Kim, Hyun-Wook Park, Sang-Won Shim, Kyung-Min Kang, Sang-Won Park, Kangbin Lee, Hyun-Jun Yoon, Kuihan Ko, Shim, Dong-Kyo, Ahn, Yang-Lo, Ryu, Jinho, Kim, Donghyun, Yun, Kyunghwa, Kwon, Joonsoo, Shin, Seunghoon, Byeon, Dae-Seok, Choi, Kihwan, Han, Jin-Man, Kyung, Kye-Hyun, Choi, Jeong-Hyuk, Kim, Kinam
Published in IEEE journal of solid-state circuits (01.01.2015)
Published in IEEE journal of solid-state circuits (01.01.2015)
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Journal Article
A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology
Ki-Tae Park, Ohsuk Kwon, Sangyong Yoon, Myung-Hoon Choi, In-Mo Kim, Bo-Geun Kim, Min-Seok Kim, Yoon-Hee Choi, Seung-Hwan Shin, Youngson Song, Joo-Yong Park, Jae-Eun Lee, Chang-Gyu Eun, Ho-Chul Lee, Hyeong-Jun Kim, Jun-Hee Lee, Jong-Young Kim, Tae-Min Kweon, Hyun-Jun Yoon, Taehyun Kim, Dong-Kyo Shim, Jongsun Sel, Ji-Yeon Shin, Pansuk Kwak, Jin-Man Han, Keon-Soo Kim, Sungsoo Lee, Young-Ho Lim, Tae-Sung Jung
Published in 2011 IEEE International Solid-State Circuits Conference (01.02.2011)
Published in 2011 IEEE International Solid-State Circuits Conference (01.02.2011)
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Conference Proceeding
7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate
Im, Jae-Woo, Jeong, Woo-Pyo, Kim, Doo-Hyun, Nam, Sang-Wan, Shim, Dong-Kyo, Choi, Myung-Hoon, Yoon, Hyun-Jun, Kim, Dae-Han, Kim, You-Se, Park, Hyun-Wook, Kwak, Dong-Hun, Park, Sang-Won, Yoon, Seok-Min, Hahn, Wook-Ghee, Ryu, Jin-Ho, Shim, Sang-Won, Kang, Kyung-Tae, Choi, Sung-Ho, Ihm, Jeong-Don, Min, Young-Sun, Kim, In-Mo, Lee, Doo-Sub, Cho, Ji-Ho, Kwon, Oh-Suk, Lee, Ji-Sang, Kim, Moo-Sung, Joo, Sang-Hyun, Jang, Jae-Hoon, Hwang, Sang-Won, Byeon, Dae-Seok, Yang, Hyang-Ja, Park, Ki-Tae, Kyung, Kye-Hyun, Choi, Jeong-Hyuk
Published in 2015 IEEE International Solid State Circuits Conference (ISSCC) (01.02.2015)
Published in 2015 IEEE International Solid State Circuits Conference (ISSCC) (01.02.2015)
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Conference Proceeding
Journal Article
Nonvolatile Memory Device
SHIM, DONG KYO, LIM, BONG SOON, JEON, SU CHANG, YU, CHANG YEON, KIM, JIN YOUNG, SONG, KI WHAN, KIM, SEONG JIN, PARK, JUNE HONG
Year of Publication 16.08.2018
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Year of Publication 16.08.2018
Patent
METHOD OF PROGRAMMING DATA IN NONVOLATILE MEMORY DEVICE
SHIM, DONG KYO, JEONG, JAE YONG, KIM, TAE YOUNG, KIM, MIN SEOK, PARK, KI TAE
Year of Publication 19.11.2013
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Year of Publication 19.11.2013
Patent