Active Terahertz Imaging Using Schottky Diodes in CMOS: Array and 860-GHz Pixel
Ruonan Han, Yaming Zhang, Youngwan Kim, Dae Yeon Kim, Shichijo, Hisashi, Afshari, Ehsan, Kenneth, K. O.
Published in IEEE journal of solid-state circuits (01.10.2013)
Published in IEEE journal of solid-state circuits (01.10.2013)
Get full text
Journal Article
High-Frequency Noise Characterization and Modeling of SiGe HBTs
Cheng, Peng, Shichijo, Hisashi
Published in IEEE transactions on microwave theory and techniques (01.12.2018)
Published in IEEE transactions on microwave theory and techniques (01.12.2018)
Get full text
Journal Article
Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs
Mehta, Abhas, Shichijo, Hisashi, Joh, Jungwoo, Suh, Chang, Kim, Moon
Published in ECS transactions (29.09.2023)
Published in ECS transactions (29.09.2023)
Get full text
Journal Article
High Frequency TDDB of Reinforced Isolation Dielectric Systems
Bonifield, Tom, Guo, Honglin, West, Jeff, Shichijo, Hisashi, Tahir, Talha
Published in 2020 IEEE International Reliability Physics Symposium (IRPS) (01.04.2020)
Published in 2020 IEEE International Reliability Physics Symposium (IRPS) (01.04.2020)
Get full text
Conference Proceeding
280GHz and 860GHz image sensors using Schottky-barrier diodes in 0.13μm digital CMOS
Ruonan Han, Yaming Zhang, Youngwan Kim, Dae Yeon Kim, Shichijo, H., Afshari, E., Kenneth, O.
Published in 2012 IEEE International Solid-State Circuits Conference (01.02.2012)
Published in 2012 IEEE International Solid-State Circuits Conference (01.02.2012)
Get full text
Conference Proceeding
Broadband Root-Mean-Square Detector in CMOS for On-Chip Measurements of Millimeter-Wave Voltages
Chuan Lee, Wooyeol Choi, Ruonan Han, Shichijo, H., Kenneth, K. O.
Published in IEEE electron device letters (01.06.2012)
Published in IEEE electron device letters (01.06.2012)
Get full text
Journal Article
I-Gate Body-Tied Silicon-on-Insulator MOSFETs With Improved High-Frequency Performance
Chieh-Lin Wu, Chikuang Yu, Shichijo, H, Kenneth, K O
Published in IEEE electron device letters (01.04.2011)
Published in IEEE electron device letters (01.04.2011)
Get full text
Journal Article
off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown
Varghese, D., Kufluoglu, H., Reddy, V., Shichijo, H., Mosher, D., Krishnan, S., Muhammad Ashraful Alam
Published in IEEE transactions on electron devices (01.10.2007)
Published in IEEE transactions on electron devices (01.10.2007)
Get full text
Journal Article
A Physical Understanding of RF Noise in Bulk nMOSFETs With Channel Lengths in the Nanometer Regime
Mahajan, V. M., Patalay, P. R., Jindal, R. P., Shichijo, H., Martin, S., Hou, F., Machala, C., Trombley, D. E.
Published in IEEE transactions on electron devices (01.01.2012)
Published in IEEE transactions on electron devices (01.01.2012)
Get full text
Journal Article
Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs
Mehta, Abhas, Shichijo, Hisashi, Joh, Jungwoo, Suh, Chang, Kim, Moon
Published in Meeting abstracts (Electrochemical Society) (22.12.2023)
Published in Meeting abstracts (Electrochemical Society) (22.12.2023)
Get full text
Journal Article
Device and technology evolution for Si-based RF integrated circuits
Bennett, H.S., Brederlow, R., Costa, J.C., Cottrell, P.E., Huang, W.M., Immorlica, A.A., Mueller, J.-E., Racanelli, M., Shichijo, H., Weitzel, C.E., Bin Zhao
Published in IEEE transactions on electron devices (01.07.2005)
Published in IEEE transactions on electron devices (01.07.2005)
Get full text
Journal Article
Prediction of noise transit time and noise correlation of SiGe HBTs
Cheng, Peng, Shichijo, Hisashi
Published in 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) (01.01.2018)
Published in 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) (01.01.2018)
Get full text
Conference Proceeding
High-voltage drain extended MOS transistors for 0.18-μm logic CMOS process
Mitros, J.C., Chin-Yu Tsai, Shichijo, H., Kunz, M., Morton, A., Goodpaster, D., Mosher, D., Efland, T.R.
Published in IEEE transactions on electron devices (01.08.2001)
Published in IEEE transactions on electron devices (01.08.2001)
Get full text
Journal Article
RF CMOS on high-resistivity substrates for system-on-chip applications
Benaissa, K., Jau-Yuann Yang, Crenshaw, D., Williams, B., Sridhar, S., Ai, J., Boselli, G., Song Zhao, Shaoping Tang, Ashburn, S., Madhani, P., Blythe, T., Mahalingam, N., Shichijo, H.S.
Published in IEEE transactions on electron devices (01.03.2003)
Published in IEEE transactions on electron devices (01.03.2003)
Get full text
Journal Article
High frequency noise characterization of BiCMOS transistors over temperature
Peng Cheng, Shichijo, Hisashi
Published in 2016 IEEE Dallas Circuits and Systems Conference (DCAS) (01.10.2016)
Published in 2016 IEEE Dallas Circuits and Systems Conference (DCAS) (01.10.2016)
Get full text
Conference Proceeding
Device and technology evolution for Si-based RF integrated circuits : Integrated Circuits Technologies for RF Circuit Applications
BENNETT, Herbert S, BREDERLOW, Ralf, BIN ZHAO, COSTA, Julio C, COTTRELL, Peter E, HUANG, W. Margaret, IMMORLICA, Anthony A, MUELLER, Jan-Erik, RACANELLI, Marco, SHICHIJO, Hisashi, WEITZEL, Charles E
Published in IEEE transactions on electron devices (2005)
Get full text
Published in IEEE transactions on electron devices (2005)
Journal Article
Foreword special issue on device integration technology for mixed-signal SOC
Chatterjee, A., Cressler, J.D., Klaassen, D.B.M., Matsuzawa, A., Shichijo, H.
Published in IEEE transactions on electron devices (01.03.2003)
Published in IEEE transactions on electron devices (01.03.2003)
Get full text
Journal Article