GaN-Based RF Power Devices and Amplifiers
Mishra, Umesh K., Shen, Likun, Kazior, Thomas E., Wu, Yi-Feng
Published in Proceedings of the IEEE (01.02.2008)
Published in Proceedings of the IEEE (01.02.2008)
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Journal Article
Plasma Treatment for Leakage Reduction in AlGaN/GaN and GaN Schottky Contacts
Rongming Chu, Likun Shen, Fichtenbaum, N., Brown, D., Keller, S., Mishra, U.K.
Published in IEEE electron device letters (01.04.2008)
Published in IEEE electron device letters (01.04.2008)
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Journal Article
V-Gate GaN HEMTs for X-Band Power Applications
Rongming Chu, Likun Shen, Fichtenbaum, N., Brown, D., Zhen Chen, Keller, S., DenBaars, S.P., Mishra, U.K.
Published in IEEE electron device letters (01.09.2008)
Published in IEEE electron device letters (01.09.2008)
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Journal Article
Commercialization and reliability of 600 V GaN power switches
Kikkawa, Toshihide, Hosoda, Tsutomu, Shono, Ken, Imanishi, Kenji, Asai, Yoshimori, YiFeng Wu, Likun Shen, Smith, Kurt, Dunn, Dixie, Chowdhury, Saurabh, Smith, Peter, Gritters, John, McCarthy, Lee, Barr, Ronald, Lal, Rakesh, Mishra, Umesh, Parikh, Primit
Published in 2015 IEEE International Reliability Physics Symposium (01.04.2015)
Published in 2015 IEEE International Reliability Physics Symposium (01.04.2015)
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Conference Proceeding
Interdigitated Multipixel Arrays for the Fabrication of High-Power Light-Emitting Diodes With Very Low Series Resistances, Reduced Current Crowding, and Improved Heat Sinking
Chakraborty, Arpan, Shen, Likun, Mishra, Umesh K.
Published in IEEE transactions on electron devices (01.05.2007)
Published in IEEE transactions on electron devices (01.05.2007)
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Journal Article
Correlation Between DC-RF Dispersion and Gate Leakage in Deeply Recessed GaN/AlGaN/GaN HEMTs
Rongming Chu, Likun Shen, Fichtenbaum, N., Zhen Chen, Keller, S., DenBaars, S.P., Mishra, U.K.
Published in IEEE electron device letters (01.04.2008)
Published in IEEE electron device letters (01.04.2008)
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Journal Article
Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs
Moe, Craig G., Schmidt, Mathew C., Masui, Hisashi, Chakraborty, Arpan, Vampola, Kenneth, Newman, Scott, Moran, Brendan, Shen, Likun, Mates, Tom, Keller, Stacia, Denbaars, Steven P., Emerson, David
Published in Journal of electronic materials (01.04.2006)
Published in Journal of electronic materials (01.04.2006)
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Journal Article
Commercialization of high 600V GaN-on-silicon power HEMTs and diodes
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Conference Proceeding
V-Gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-Band
Rongming Chu, Likun Shen, Fichtenbaum, N., Brown, D., Zhen Chen, Keller, S., Mishra, U.
Published in 2008 Device Research Conference (01.06.2008)
Published in 2008 Device Research Conference (01.06.2008)
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Conference Proceeding
Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
Moe, Craig G., Masui, Hisashi, Schmidt, Mathew C., Shen, Likun, Moran, Brendan, Newman, Scott, Vampola, Kenneth, Mates, Tom, Keller, Stacia, Speck, James S., DenBaars, Steven P., Hussel, Chris, Emerson, David
Published in Japanese Journal of Applied Physics (01.01.2005)
Published in Japanese Journal of Applied Physics (01.01.2005)
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Journal Article
Surface Treatment for Leakage Reduction in AlGaN/GaN HEMTs
Rongming Chu, Likun Shen, Fichtenbaum, N., Keller, S., Corrion, A., Poblenz, C., Speck, J., Mishra, U.
Published in 2007 65th Annual Device Research Conference (01.06.2007)
Published in 2007 65th Annual Device Research Conference (01.06.2007)
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Conference Proceeding
600 V JEDEC-qualified highly reliable GaN HEMTs on Si substrates
Kikkawa, Toshihide, Hosoda, Tsutomu, Imanishi, Kenji, Shono, Ken, Itabashi, Kazuo, Ogino, Tsutomu, Miyazaki, Yasumori, Mochizuki, Akitoshi, Kiuchi, Kenji, Kanamura, Masahito, Kamiyama, Masamichi, Akiyama, Shiniichi, Kawasaki, Susumu, Maeda, Takeshi, Asai, Yoshimori, YiFeng Wu, Smith, Kurt, Gritters, John, Smith, Peter, Chowdhury, Saurabh, Dunn, Dixie, Aguilera, Martin, Swenson, Brian, Birkhahn, Ron, McCarthy, Lee, Likun Shen, McKay, Jim, Clement, Heber, Honea, Jim, Sung Yea, Thor, Douglas, Lal, Rakesh, Mishra, Umesh, Parikh, Primit
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
Published in 2014 IEEE International Electron Devices Meeting (01.12.2014)
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Conference Proceeding
5000+ Wafers of 650 V Highly Reliable GaN HEMTs on Si Substrates: Wafer Breakage and Backside Contamination Results
Chowdhury, Saurabh, Wu, YiFeng, Shen, Likun, McCarthy, Lee, Parikh, Primit, Rhodes, David, Hosoda, Tsutomu, Kotani, Yoshiyuki, Imanishi, Kenji, Asai, Yoshimori, Ogino, Tsutsumo, Kiuchi, Kenji
Published in 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) (01.08.2020)
Published in 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) (01.08.2020)
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Conference Proceeding
(Invited) 650 Volt GaN Commercialization Reaches Automotive Standards
Parikh, Primit, Smith, Kurt, Barr, Ron, Shono, Ken, McKay, J., Shen, Likun, Lal, R., Chowdhury, S., Yea, S., Smith, R. P., Hosoda, T., Gritters, J., McCarthy, L., Birkhahn, R., Imanishi, K., Swenson, B., Moore, M., Kotani, Y., Ogino, T., Bushnell, N., Guerrero, J., Clement, H., Asai, Y., Wu, YiFeng
Published in ECS transactions (17.08.2017)
Published in ECS transactions (17.08.2017)
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Journal Article
650 V Highly Reliable GaN HEMTs on Si Substrates over multiple generations: Expanding usage of a mature 150 mm Si Foundry
Chowdhury, Saurabh, Wu, YiFeng, Shen, Likun, Smith, Peter, Gritters, John, McCarthy, Lee, Barr, Ronald, Parikh, Primit, Hosoda, Tsutomu, Kotani, Yoshiyuki, Imanishi, Kenji, Ogino, Tsutsumo, Kiuchi, Kenji, Asai, Yoshimori
Published in 2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) (01.05.2019)
Published in 2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) (01.05.2019)
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Conference Proceeding
650 V Highly Reliable GaN HEMTs on Si Substrates over Multiple Generations: Matching Silicon CMOS Manufacturing Metrics and Process Control
Chowdhury, Saurabh, Wu, YiFeng, Shen, Likun, Smith, Kurt, Smith, Peter, Kikkawa, Toshihide, Gritters, John, McCarthy, Lee, Lal, Rakesh, Barr, Ronald, Wang, Zhan, Mishra, Umesh, Parikh, Primit, Hosoda, Tsutomu, Shono, Ken, Imanishi, Kenji, Ogino, Tsutsumo, Mochizuki, Akitoshi, Kiuchi, Kenji, Asai, Yoshimori
Published in 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) (01.10.2016)
Published in 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) (01.10.2016)
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Conference Proceeding
Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
Pei, Yi, Chu, Rongming, Fichtenbaum, Nicholas A., Chen, Zhen, Brown, David, Shen, Likun, Keller, Stacia, DenBaars, Steven P., Mishra, Umesh K.
Published in Japanese Journal of Applied Physics (01.12.2007)
Published in Japanese Journal of Applied Physics (01.12.2007)
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Journal Article
Large area GaN HEMT power devices for power electronic applications: switching and temperature characteristics
Naiqian Zhang, Mehrotra, V., Chandrasekaran, S., Moran, B., Likun Shen, Mishra, U., Etzkorn, E., Clarke, D.
Published in IEEE 34th Annual Conference on Power Electronics Specialist, 2003. PESC '03 (2003)
Published in IEEE 34th Annual Conference on Power Electronics Specialist, 2003. PESC '03 (2003)
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Conference Proceeding