A 70 nm 16 Gb 16-Level-Cell NAND flash Memory
Shibata, N., Maejima, H., Isobe, K., Iwasa, K., Nakagawa, M., Fujiu, M., Shimizu, T., Honma, M., Hoshi, S., Kawaai, T., Kanebako, K., Yoshikawa, S., Tabata, H., Inoue, A., Takahashi, T., Shano, T., Komatsu, Y., Nagaba, K., Kosakai, M., Motohashi, N., Kanazawa, K., Imamiya, K., Nakai, H., Lasser, M., Murin, M., Meir, A., Eyal, A., Shlick, M.
Published in IEEE journal of solid-state circuits (01.04.2008)
Published in IEEE journal of solid-state circuits (01.04.2008)
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Year of Publication 29.03.2016
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Semiconductor memory device
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Year of Publication 03.11.2015
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SEMICONDUCTOR MEMORY DEVICE
SHANO TOSHIFUMI, HARA TOKUMASA, IWAI HITOSHI, FUJITA SHIROU, SUKEGAWA HIROSHI, TOKIWA NAOYA
Year of Publication 05.02.2015
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Year of Publication 05.02.2015
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