Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides : Sc2O3, Lu2O3, LaLuO3
AFANAS' EV, V. V, SHAMUILIA, S, BADYLEVICH, M, STESMANS, A, EDGE, L. F, TIAN, W, SCHLOM, D. G, LOPES, J. M. J, ROECKERATH, M, SCHUBERT, J
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Conference Proceeding
Journal Article
Strontium hafnate films deposited by physical vapor deposition
McCarthy, I., Agustin, M.P., Shamuilia, S., Stemmer, S., Afanas'ev, V.V., Campbell, S.A.
Published in Thin solid films (05.12.2006)
Published in Thin solid films (05.12.2006)
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Journal Article
Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals
BADYLEVICH, M, SHAMUILIA, S, AFANAS'EV, V. V, STESMANS, A, LAHA, A, OSTEN, H. J, FISSEL, A
Published in Microelectronic engineering (01.12.2008)
Published in Microelectronic engineering (01.12.2008)
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Conference Proceeding
Journal Article
Photoconductivity of Hf-based binary metal oxides
Shamuilia, S., ev, V.V. Afanas’, Stesmans, A., McCarthy, I., Campbell, S.A., Boutchich, M., Lopes, J.M.J., Roeckerath, M., Heeg, T., Rije, E., Mantl, S.
Published in Microelectronic engineering (01.12.2008)
Published in Microelectronic engineering (01.12.2008)
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Journal Article
Conference Proceeding
Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks
LI, Z, SCHRAM, T, DEWEERD, W, NAOKI, Y, LEHNEN, P, DE GENDT, S, DE MEYER, K, PANTISANO, L, STESMANS, A, CONARD, T, SHAMUILIA, S, AFANASIEV, V. V, AKHEYAR, A, VAN ELSHOCHT, S, BRUNCO, D. P
Published in Microelectronics and reliability (01.04.2007)
Published in Microelectronics and reliability (01.04.2007)
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Conference Proceeding
Journal Article
Electronic structure of the interface of aluminum nitride with Si(100)
Badylevich, M., Shamuilia, S., Afanas'ev, V. V., Stesmans, A., Fedorenko, Y. G., Zhao, C.
Published in Journal of applied physics (01.11.2008)
Published in Journal of applied physics (01.11.2008)
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Journal Article
Internal photoemission of electrons from Ta-based conductors into SiO2 and HfO2 insulators
Shamuilia, S., Afanas’ev, V. V., Stesmans, A., Schram, T., Pantisano, L.
Published in Journal of applied physics (01.10.2008)
Published in Journal of applied physics (01.10.2008)
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Journal Article
Internal photoemission of electrons from Ta-based conductors into SiO 2 and HfO 2 insulators
Shamuilia, S., Afanas'ev, V. V., Stesmans, A., Schram, T., Pantisano, L.
Published in Journal of applied physics (09.10.2008)
Published in Journal of applied physics (09.10.2008)
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Journal Article
Photoconductivity of Hf-based binary metal oxide systems
Shamuilia, S., Afanas'ev, V. V., Stesmans, A., McCarthy, I., Campbell, S. A., Boutchich, M., Roeckerath, M., Heeg, T., Lopes, J. M. J., Schubert, J.
Published in Journal of applied physics (01.12.2008)
Published in Journal of applied physics (01.12.2008)
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Journal Article
Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface
Li, Z., Schram, T., Pantisano, L., Conard, T., Van Elshocht, S., Deweerd, W., De Gendt, S., De Meyer, K., Stesmans, A., Shamuilia, S., Afanas’ev, V. V., Akheyar, A., Brunco, D. P., Yamada, N., Lehnen, P.
Published in Journal of applied physics (01.02.2007)
Published in Journal of applied physics (01.02.2007)
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Journal Article
Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc 2O 3, Lu 2O 3, LaLuO 3
Afanas’ev, V.V., Shamuilia, S., Badylevich, M., Stesmans, A., Edge, L.F., Tian, W., Schlom, D.G., Lopes, J.M.J., Roeckerath, M., Schubert, J.
Published in Microelectronic engineering (2007)
Published in Microelectronic engineering (2007)
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Journal Article
Flatband voltage shift of ruthenium gated stacks and its linkwith the formation of a thin ruthenium oxide layerat the ruthenium/dielectric interface
Li, Z., Schram, T., Pantisano, L., Conard, T., Van Elshocht, S., Deweerd, W., De Gendt, S., De Meyer, K., Stesmans, A., Shamuilia, S., Afanas'ev, V. V., Akheyar, A., Brunco, D. P., Yamada, N., Lehnen, P.
Published in Journal of applied physics (06.02.2007)
Published in Journal of applied physics (06.02.2007)
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Journal Article
Mechanism of O 2-anneal induced V fb shifts of Ru gated stacks
Li, Z., Schram, T., Pantisano, L., Stesmans, A., Conard, T., Shamuilia, S., Afanasiev, V.V., Akheyar, A., Van Elshocht, S., Brunco, D.P., Deweerd, W., Naoki, Y., Lehnen, P., De Gendt, S., De Meyer, K.
Published in Microelectronics and reliability (01.04.2007)
Published in Microelectronics and reliability (01.04.2007)
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Journal Article