Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs
Koehler, Andrew D., Anderson, Travis J., Tadjer, Marko J., Weaver, Bradley D., Greenlee, Jordan D., Shahin, David I., Hobart, Karl D., Kub, Francis J.
Published in IEEE electron device letters (01.05.2016)
Published in IEEE electron device letters (01.05.2016)
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Journal Article
A Tri-Layer PECVD SiN Passivation Process for Improved AlGaN/GaN HEMT Performance
Tadjer, Marko J., Anderson, Travis J., Koehler, Andrew D., Eddy, Charles R., Shahin, David I., Hobart, Karl D., Kub, Fritz J.
Published in ECS journal of solid state science and technology (01.01.2017)
Published in ECS journal of solid state science and technology (01.01.2017)
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Journal Article
Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition
Anderson, Travis J., Wheeler, Virginia D., Shahin, David I., Tadjer, Marko J., Koehler, Andrew D., Hobart, Karl D., Christou, Aris, Kub, Francis J., Eddy, Charles R.
Published in Applied physics express (01.07.2016)
Published in Applied physics express (01.07.2016)
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Journal Article
Cracking up
Tandon, Rajan, Shahin, David, Swiler, Thomas P.
Published in Materials today (Kidlington, England) (01.01.2012)
Published in Materials today (Kidlington, England) (01.01.2012)
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Journal Article
Ultraviolet detector based on graphene/SiC heterojunction
Anderson, Travis J., Hobart, Karl D., Greenlee, Jordan D., Shahin, David I., Koehler, Andrew D., Tadjer, Marko J., Imhoff, Eugene A., Myers-Ward, Rachael L., Christou, Aris, Kub, Francis J.
Published in Applied physics express (01.04.2015)
Published in Applied physics express (01.04.2015)
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Journal Article
Thermal etching of nanocrystalline diamond films
Shahin, David I., Anderson, Travis J., Feygelson, Tatyana I., Pate, Bradford B., Wheeler, Virginia D., Greenlee, Jordan D., Hite, Jennifer K., Tadjer, Marko J., Christou, Aristos, Hobart, Karl D.
Published in Diamond and related materials (01.10.2015)
Published in Diamond and related materials (01.10.2015)
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Journal Article
Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO 2 gate dielectric deposited by atomic layer deposition
Anderson, Travis J., Wheeler, Virginia D., Shahin, David I., Tadjer, Marko J., Koehler, Andrew D., Hobart, Karl D., Christou, Aris, Kub, Francis J., Eddy, Charles R.
Published in Applied physics express (01.07.2016)
Published in Applied physics express (01.07.2016)
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Journal Article
Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs
Shahin, David I., Anderson, Travis J., Wheeler, Virginia D., Tadjer, Marko J., Koehler, Andrew D., Hobart, Karl D., Eddy, Charles R., Kub, Francis J., Christou, Aris
Published in ECS journal of solid state science and technology (01.01.2016)
Published in ECS journal of solid state science and technology (01.01.2016)
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Journal Article
ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
Wheeler, Virginia D., Anderson, Travis J, Ahn, Shihyun, Shahin, David I, Tadjer, Marko J, Koehler, Andrew D., Hobart, Karl D, Ren, Fan, Kub, Francis J, Christou, Aris, Eddy, Charles R.
Published in ECS transactions (14.08.2017)
Published in ECS transactions (14.08.2017)
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Journal Article
(Invited) Radiation-Induced Defect Mechanisms in GaN HEMTs
Koehler, Andrew D., Anderson, Travis J, Specht, Petra, Weaver, Brad D, Greenlee, Jordan D, Tadjer, Marko J, Shahin, David I, Hobart, Karl D, Kub, Francis J
Published in ECS transactions (21.09.2015)
Published in ECS transactions (21.09.2015)
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Journal Article
(Invited) Vertical GaN High Voltage Transistors: Comparison with SiC Switches
Christou, Aristos, Shahin, David
Published in Meeting abstracts (Electrochemical Society) (01.09.2016)
Published in Meeting abstracts (Electrochemical Society) (01.09.2016)
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Journal Article