Modeling of [Formula Omitted] Shift in nand Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects
Jung, Sang-Goo, Lee, Keun-Woo, Kim, Ki-Seog, Shin, Seung-Woo, Lee, Seaung-Suk, Om, Jae-Chul, Bae, Gi-Hyun, Lee, Jong-Ho
Published in IEEE transactions on electron devices (01.04.2008)
Published in IEEE transactions on electron devices (01.04.2008)
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Journal Article
Extraction of Energy Distribution of Nitride Traps Using Charge Pumping Method in Silicon–Oxide–Nitride–Oxide–Silicon Flash Memory
Choi, Won-Ho, Park, Sung-Soo, Choi, Kwang-Il, Nam, Dong-Ho, Kwon, Hyuk-Min, Han, In-Shik, Park, Byung-Seok, Om, Jae-Chul, Lee, Seaung-Suk, Joo, Han-Soo, Lee, Hi-Deok, Lee, Ga-Won
Published in Japanese Journal of Applied Physics (01.04.2009)
Published in Japanese Journal of Applied Physics (01.04.2009)
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Journal Article
New Charge Pumping Method for Characterization of Charge Trapping Layer in Oxide–Nitride–Oxide Structure
Choi, Won-Ho, Park, Sung-Soo, Han, In-Shik, Om, Jae-Chul, Lee, Seaung-Suk, Bae, Gi-Hyun, Lee, Hi-Deok, Lee, Ga-Won
Published in Japanese Journal of Applied Physics (01.04.2008)
Published in Japanese Journal of Applied Physics (01.04.2008)
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Journal Article
Modeling of Vth Shift in NAND Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects
JUNG, Sang-Goo, LEE, Keun-Woo, KIM, Ki-Seog, SHIN, Seung-Woo, LEE, Seaung-Suk, OM, Jae-Chul, BAE, Gi-Hyun, LEE, Jong-Ho
Published in IEEE transactions on electron devices (01.04.2008)
Published in IEEE transactions on electron devices (01.04.2008)
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Journal Article
A hierarchy bitline boost scheme for sub-1.5 V operation and short precharge time on high density FeRAM
Kang, Hee-Bok, Kye, Hun-Woo, Lee, Geun-Il, Park, Je-Hoon, Kim, Jung-Hwan, Lee, Seaung-Suk, Hong, Suk-Kyoung, Park, Young-Jin, Chung, Jin-Yong
Published in 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) (2002)
Published in 2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) (2002)
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Conference Proceeding
Journal Article
Issues and Reliability of High-Density FeRAMs
Noh, Keum Hwan, Yang, Beelyong, Lee, Seok Won, Lee, Seaung-Suk, Kang, Hee-Bok, Park, Young-Jin
Published in Japanese Journal of Applied Physics (2003)
Published in Japanese Journal of Applied Physics (2003)
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Journal Article
Highly reliable 26nm 64Gb MLC E2NAND (Embedded-ECC & Enhanced-efficiency) flash memory with MSP (Memory Signal Processing) controller
Hyunyoung Shim, Seaung-Suk Lee, Byungkook Kim, Namjae Lee, Doyoung Kim, Hankyum Kim, Byungkeun Ahn, Youngho Hwang, Hoseok Lee, Jumsoo Kim, Youngbok Lee, Heeyoul Lee, Juyeab Lee, Seungho Chang, Joongseob Yang, Sungkye Park, Aritome, S., Seokkiu Lee, Kun-Ok Ahn, Gihyun Bae, Yeseok Yang
Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
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Published in 2011 Symposium on VLSI Technology - Digest of Technical Papers (01.06.2011)
Conference Proceeding
Modeling of V Shift in nand Flash-Memory Cell Device Considering Crosstalk and Short-Channel Effects
Jung, Sang-Goo, Lee, Keun-Woo, Kim, Ki-Seog, Shin, Seung-Woo, Lee, Seaung-Suk, Om, Jae-Chul, Bae, Gi-Hyun, Lee, Jong-Ho
Published in IEEE transactions on electron devices (01.04.2008)
Published in IEEE transactions on electron devices (01.04.2008)
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Journal Article
Performance and reliability of low-temperature processed SrBi2Ta2O9 capacitors for FeRAM applications
OH, Sang-Hyun, KEUM HWAN NOH, SEAUNG SUK LEE, KANG, Hee-Bok, YOUNG HO YANG, LEE, Kye-Nam, HONG, Suk-Kyoung, PARK, Young-Jin
Published in Journal of the Electrochemical Society (2004)
Published in Journal of the Electrochemical Society (2004)
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Journal Article
Performance and Reliability of Low-Temperature Processed SrBi[sub 2]Ta[sub 2]O[sub 9] Capacitors for FeRAM Applications
Oh, Sang-Hyun, Noh, Keum Hwan, Lee, Seaung Suk, Kang, Hee-Bok, Yang, Young Ho, Lee, Kye-Nam, Hong, Suk-Kyoung, Park, Young-Jin
Published in Journal of the Electrochemical Society (2004)
Published in Journal of the Electrochemical Society (2004)
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Journal Article
Characterization of Low Frequency Noise in Floating Gate NAND Flash Memory
Sung-Ho Bae, Jeong-Hyun Lee, Jong-Ho Lee, Hyuck-In Kwon, Seaung-Suk Lee, Jae-Chul Om, Gi-Hyun Bae
Published in 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design (01.05.2008)
Published in 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design (01.05.2008)
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Conference Proceeding
Modeling and Characterization of Program / Erasure Speed and Retention of TiN-gate MANOS (Si-Oxide-SiNx-Al2O3-Metal Gate) Cells for NAND Flash Memory
Eun-Seok Choi, Hyun-Seung Yoo, Kyoung-Hwan Park, Se-Jun Kim, Jung-Ryul Ahn, Myung-Shik Lee, Young-Ok Hong, Suk-Goo Kim, Jae-Chul Om, Moon-Sig Joo, Seung-Ho Pyi, Seaung-Suk Lee, Seok-Kiu Lee, Gi-Hyun Bae
Published in 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop (01.08.2007)
Published in 2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop (01.08.2007)
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Conference Proceeding
FERROELECTRIC MEMORIES USING RANDOMLY ORIENTED (Bi1-xLax)4Ti3O12 FILMS
Yang, B, Lee, S S, Kang, Y M, Noh, K H, Lee, S W, Kim, N K, Kweon, S Y
Published in Japanese Journal of Applied Physics, Part 1 (2003)
Published in Japanese Journal of Applied Physics, Part 1 (2003)
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Journal Article
Characterization of Hynix 16M Feram Adopted Novel Sensing Scheme
Lee, Seaung-Suk, Noh, Keum-Hwan, Kang, Hee-Bok, Hong, Suk-Kyoung, Yeom, Seung-Jin, Park, Young-Jin
Published in Integrated ferroelectrics (01.01.2003)
Published in Integrated ferroelectrics (01.01.2003)
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Journal Article
CHARACTERIZATION OF POLARIZATION SWITCHING BEHAVIOR OF Pt/SrBi2Ta2O9/Pt FERROELECTRIC CAPACITORS IN FERROELECTRIC RANDOM ACCESS MEMORY
Kang, Y M, Chung, C H, Oh, S H, Yang, B, Lee, S S, Hong, S K, Kang, N S
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 2A, pp. 694-697. 2002 (2002)
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 2A, pp. 694-697. 2002 (2002)
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Journal Article