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WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES BY SELECTIVELY REMOVING A BARRIER LAYER
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Work function adjustment in high-k metal gate electrode structures by selectively removing a barrier layer
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Year of Publication 01.12.2011
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WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES BY SELECTIVELY REMOVING A BARRIER LAYER
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Year of Publication 02.12.2010
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A self-aligned multiple gate transistor formed on a bulk substrate
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Year of Publication 11.07.2016
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Self-aligned multiple gate transistor formed on bulk substrate and manufacture method thereof
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Year of Publication 26.02.2014
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Year of Publication 26.02.2014
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