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Methods for producing a cavity within a semiconductor substrate
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METHODS FOR PRODUCING A CAVITY WITHIN A SEMICONDUCTOR SUBSTRATE
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Semiconductor device for power semiconductor engineering area has intermetal dielectric between conducting path layers by insulated filling layer such that silicon oxygen nitride layer is formed on dielectric
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Year of Publication 11.12.2007
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Methods for producing a cavity within a semiconductor substrate
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Year of Publication 30.10.2013
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Year of Publication 30.10.2013
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Verfahren zur Erzeugung einer Kavität innerhalb eines Halbleitersubstrats
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Method for cleaning a process chamber
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Year of Publication 13.01.2010
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