Search Results - "SCHOLZ ARND" :: K.UTB vyhledávací portál

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Herstellungsverfahren für einen Grabenkondensator mit einem Isolationskragen, der über einen vergrabenen Kontakt einseitig mit einem Substrat elektrisch verbunden ist, insbesondere für eine Halbleiterspeicherzelle

by SCHOLZ, ARND
Year of Publication 02.11.2006

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Method for forming inside nitride spacer for deep trench device DRAM cell

by Scholz, Arnd
Year of Publication 04.10.2005

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Method for forming inside nitride spacer for deep trench device DRAM cell

by SCHOLZ ARND
Year of Publication 04.10.2005

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Production of a trench capacitor comprises forming a trench in a substrate using a hard mask with a corresponding opening, placing a capacitor dielectric in the trench and over the mask, and further processing

by SCHOLZ, ARND
Year of Publication 17.03.2005

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Process window enhancement for deep trench spacer conservation

by Scholz, Arnd
Year of Publication 03.04.2003

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Method for forming inside nitride spacer for deep trench device DRAM cell

by SCHOLZ ARND
Year of Publication 03.04.2003

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Method for forming inside nitride spacer for deep trench device DRAM cell

by Scholz, Arnd
Year of Publication 03.04.2003

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Verfahren zum Herstellen eines Vertikalen DRAM-Bauelements

by SCHOLZ, ARND, HUMMLER, KLAUS
Year of Publication 03.04.2008

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Making trench capacitor in semiconductor substrate employs series of partial collars, fillings and self-adjusting masking to achieve high aspect ratio

by SCHOLZ, ARND, GOLDBACH, MATTHIAS
Year of Publication 23.06.2005

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Process window enhancement for deep trench spacer conservation

by SCHOLZ ARND R
Year of Publication 30.11.2004

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Process window enhancement for deep trench spacer conservation

by Scholz, Arnd R
Year of Publication 30.11.2004

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Process window enhancement for deep trench spacer conservation

by SCHOLZ ARND R
Year of Publication 03.04.2003

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Method for forming inside nitride spacer for deep trench device dram cell

by Scholz, Arnd, Dev, Prakash
Year of Publication 03.04.2003

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Transistor, integrierte Schaltung und Verfahren zur Herstellung einer integrierten Schaltung

by SCHOLZ, ARND, GRAHAM, ANDREW, HARTWICH, JESSICA
Year of Publication 05.02.2009

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TRANSISTOR, INTEGRATED CIRCUIT, AND INTEGRATED CIRCUIT FORMATION METHOD

by HARTWICH JESSICA, GRAHAM ANDREW, SCHOLZ ARND
Year of Publication 11.12.2008

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TRANSISTOR, INTEGRATED CIRCUIT AND METHOD OF FORMING AN INTEGRATED CIRCUIT

by HARTWICH JESSICA, GRAHAM ANDREW, SCHOLZ ARND
Year of Publication 04.12.2008

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TRANSISTOR, INTEGRATED CIRCUIT AND METHOD OF FORMING AN INTEGRATED CIRCUIT

by HARTWICH JESSICA, GRAHAM ANDREW, SCHOLZ ARND
Year of Publication 04.12.2008

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Transistor i.e. recessed channel array transistor, for use in memory i.e. dynamic RAM, of integrated circuit, has gate electrode arranged in gate trench, and carbon material corresponding to layer over gate dielectric layer

by SCHOLZ, ARND, GRAHAM, ANDREW, HARTWICH, JESSICA
Year of Publication 16.10.2008

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Methods of manufacturing semiconductor structures

by SCHOLZ ARND, NOELSCHER CHRISTOPH, PARASCANDOLA STEFANO, CASPARY DIRK
Year of Publication 11.01.2011

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Methods of manufacturing semiconductor structures

by Caspary, Dirk, Scholz, Arnd, Parascandola, Stefano, Nölscher, Christoph
Year of Publication 11.01.2011

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