Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors
Yurchuk, Ekaterina, Muller, Johannes, Paul, Jan, Schlosser, Till, Martin, Dominik, Hoffmann, Raik, Mueller, Stefan, Slesazeck, Stefan, Schroeder, Uwe, Boschke, Roman, van Bentum, Ralf, Mikolajick, Thomas
Published in IEEE transactions on electron devices (01.11.2014)
Published in IEEE transactions on electron devices (01.11.2014)
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Journal Article
Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
Martin, Dominik, Yurchuk, Ekaterina, Müller, Stefan, Müller, Johannes, Paul, Jan, Sundquist, Jonas, Slesazeck, Stefan, Schlösser, Till, van Bentum, Ralf, Trentzsch, Martin, Schröder, Uwe, Mikolajick, Thomas
Published in Solid-state electronics (01.10.2013)
Published in Solid-state electronics (01.10.2013)
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Journal Article
Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories
Yurchuk, Ekaterina, Mueller, Stefan, Martin, Dominik, Slesazeck, Stefan, Schroeder, Uwe, Mikolajick, Thomas, Muller, Johannes, Paul, Jan, Hoffmann, Raik, Sundqvist, Jonas, Schlosser, Till, Boschke, Roman, van Bentum, Ralf, Trentzsch, Martin
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
Published in 2014 IEEE International Reliability Physics Symposium (01.06.2014)
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Conference Proceeding
From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of -Based FeFET Devices
Mueller, Stefan, Muller, Johannes, Hoffmann, Raik, Yurchuk, Ekaterina, Schlosser, Till, Boschke, Roman, Paul, Jan, Goldbach, Matthias, Herrmann, Tom, Zaka, Alban, Schroder, Uwe, Mikolajick, Thomas
Published in IEEE transactions on electron devices (01.12.2013)
Published in IEEE transactions on electron devices (01.12.2013)
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Journal Article
Impact of Scaling on the Performance of HfO sub(2)-Based Ferroelectric Field Effect Transistors
Yurchuk, Ekaterina, Muller, Johannes, Paul, Jan, Schlosser, Till, Martin, Dominik, Hoffmann, Raik, Mueller, Stefan, Slesazeck, Stefan, Schroeder, Uwe, Boschke, Roman, van Bentum, Ralf, Mikolajick, Thomas
Published in IEEE transactions on electron devices (01.11.2014)
Published in IEEE transactions on electron devices (01.11.2014)
Get full text
Journal Article
Impact of Scaling on the Performance of HfO 2 -Based Ferroelectric Field Effect Transistors
Yurchuk, Ekaterina, Muller, Johannes, Paul, Jan, Schlosser, Till, Martin, Dominik, Hoffmann, Raik, Mueller, Stefan, Slesazeck, Stefan, Schroeder, Uwe, Boschke, Roman, van Bentum, Ralf, Mikolajick, Thomas
Published in IEEE transactions on electron devices (01.11.2014)
Published in IEEE transactions on electron devices (01.11.2014)
Get full text
Journal Article
From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices
MUELLER, Stefan, MÜLLER, Johannes, SCHRÖDER, Uwe, MIKOLAJICK, Thomas, HOFFMANN, Raik, YURCHUK, Ekaterina, SCHLÖSSER, Till, BOSCHKE, Roman, PAUL, Jan, GOLDBACH, Matthias, HERRMANN, Tom, ZAKA, Alban
Published in IEEE transactions on electron devices (01.12.2013)
Published in IEEE transactions on electron devices (01.12.2013)
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Journal Article
Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2: Selected extended papers from ULIS 2012 conference
MARTIN, Dominik, YURCHUK, Ekaterina, SCHRÖDER, Uwe, MIKOLAJICK, Thomas, MÜLLER, Stefan, MÜLLER, Johannes, PAUL, Jan, SUNDQUIST, Jonas, SLESAZECK, Stefan, SCHLÖSSER, Till, VAN BENTUM, Ralf, TRENTZSCH, Martin
Published in Solid-state electronics (2013)
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Published in Solid-state electronics (2013)
Journal Article