Search Results - "SCHEPIS, Dominic J" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

$Channel Strain Characterization in Embedded SiGe by Nano-beam Diffraction$

Channel Strain Characterization in Embedded SiGe by Nano-beam Diffraction

by Li, Jinghong, Lamberti, Angela, Domenicucci, Anthony, Gignac, L., Utomo, Henry, Luo, Zhijiong, Rovedo, Nivo, Fang, Sunfei, Ng, Hung, Holt, Judson R., Madan, Anita, Lai, Chung Woh, Ku, Ja-Hum, Schepis, Dominic J., Han, Jin-Ping, Lagus, Mark
Published in ECS transactions (03.10.2008)

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Journal Article

FULLY AMORPHIZED SOURCE/DRAIN FOR LEAKY JUNCTIONS

FULLY AMORPHIZED SOURCE/DRAIN FOR LEAKY JUNCTIONS

by SCHEPIS DOMINIC J, MELANIE J. SHERONY, SCOTT CLAUDER
Year of Publication 29.08.2001

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Patent

RAISED SOURCE/DRAIN SOI TRANSISTOR, AND CMOS DEVICE AND MANUFACTURING METHOD OF CMOS DEVICE USING ULTRA-THIN SOI(SILICON OVER INSULATOR) SUBSTRATE

RAISED SOURCE/DRAIN SOI TRANSISTOR, AND CMOS DEVICE AND MANUFACTURING METHOD OF CMOS DEVICE USING ULTRA-THIN SOI(SILICON OVER INSULATOR) SUBSTRATE

by PARK HEE MYONG, SHAHIDI GHAVAM G, LEE BYOUNG HUN, AGNELLO PAUL D, SCHEPIS DOMINIC J
Year of Publication 14.07.2004

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Patent

FIELD EFFECT TRANSISTOR WITH IMPROVED CHARGE CARRIER MOBILITY AND MANUFACTURING METHOD THEREOF

FIELD EFFECT TRANSISTOR WITH IMPROVED CHARGE CARRIER MOBILITY AND MANUFACTURING METHOD THEREOF

by CHIDAMBARRAO DURESETI, DORIS BRUCE B, BAIE XAVIER, SANDANA DEVENDRA K, SCHEPIS DOMINIC J, MANDELMAN JACK A
Year of Publication 18.06.2004

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Patent

THERMAL CONDUCTIVITY ENHANCED SEMICONDUCTOR STRUCTURES AND FABRICATION PROCESSES

THERMAL CONDUCTIVITY ENHANCED SEMICONDUCTOR STRUCTURES AND FABRICATION PROCESSES

by GAUTHIER JR. ROBERT J, VOLDMAN STEVEN HOWARD, SCHEPIS DOMINIC J, TONTI, WILLIAM R
Year of Publication 07.09.2001

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Patent

Transistors and methods of forming transistors using vertical nanowires

Transistors and methods of forming transistors using vertical nanowires

by Schepis, Dominic J, Reznicek, Alexander
Year of Publication 25.01.2022

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Patent

TRANSISTORS AND METHODS OF FORMING TRANSISTORS USING VERTICAL NANOWIRES

TRANSISTORS AND METHODS OF FORMING TRANSISTORS USING VERTICAL NANOWIRES

by REZNICEK, Alexander, SCHEPIS, Dominic J
Year of Publication 11.06.2020

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Patent

Transistors and methods of forming transistors using vertical nanowires

Transistors and methods of forming transistors using vertical nanowires

by Schepis, Dominic J, Reznicek, Alexander
Year of Publication 19.05.2020

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Patent

TRANSISTORS AND METHODS OF FORMING TRANSISTORS USING VERTICAL NANOWIRES

TRANSISTORS AND METHODS OF FORMING TRANSISTORS USING VERTICAL NANOWIRES

by REZNICEK, Alexander, SCHEPIS, Dominic J
Year of Publication 16.08.2018

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Patent

SiGe Selective Epitaxy: Morphology and Thickness Control for High Performance CMOS Technology

SiGe Selective Epitaxy: Morphology and Thickness Control for High Performance CMOS Technology

by Holt, Judson R., Harley, Eric C., Adam, Thomas N., Jeng, Shwu-Jen, Tabakman, Keith, Pal, Rohit, Nayfeh, Hasan M., Black, Linda R., Kempisty, Jeremy J., Stoker, Matthew W., Dube, Abhishek, Schepis, Dominic J.
Published in ECS transactions (2009)

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Journal Article

Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step

Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step

by Schepis, Dominic J, Kerber, Pranita, Reznicek, Alexander, Ouyang, Qiqing C
Year of Publication 05.05.2020

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Patent

Recent Progress and Challenges in Enabling Embedded Si:C Technology

Recent Progress and Challenges in Enabling Embedded Si:C Technology

by Yang, B F., Ren, Zhibin, Takalkar, Rohit, Black, Linda R., Dube, Abhishek, Weijtmans, J. W., Li, John, Chan, K, Souza, J P de, Madan, Anita, Xia, G., Zhu, Zhengmao, Faltermeier, J., Reznicek, A., Adam, Thomas N., Chakravarti, Ashima, Pei, G, Pal, Rohit, Yang, B, Harley, Eric C., Greene, B, Gehring, A, Cai, M, Sadana, D, Park, D, Mocuta, D, Schepis, Dominic J., Maciejewski, E, Luning, S, Leobandung, E
Published in ECS transactions (2009)

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Journal Article

Effect of Ion Implantation and Anneals on Fully-strained SiC and SiC:P Films using Multiple Characterization Techniques

Effect of Ion Implantation and Anneals on Fully-strained SiC and SiC:P Films using Multiple Characterization Techniques

by Madan, Anita, Li, Jinghong, Ren, Zhibin, Yang, B F., Harley, Eric C., Adam, Thomas N., Loesing, Rainer, Zhu, Zhengmao, Pinto, Teresa, Chakravarti, Ashima, Dube, Abhishek, Takalkar, Rohit, Weijtmans, J. W., Black, Linda R., Schepis, Dominic J.
Published in ECS transactions (2009)

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Journal Article

STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON GERMANIUM WITH SAME GERMANIUM CONCENTRATION BY SINGLE EPITAXY STEP

STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON GERMANIUM WITH SAME GERMANIUM CONCENTRATION BY SINGLE EPITAXY STEP

by Schepis, Dominic J, Kerber, Pranita, Reznicek, Alexander, Ouyang, Qiqing C
Year of Publication 23.05.2019

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Patent

Fin cut without residual fin defects

Fin cut without residual fin defects

by Schepis, Dominic J, Cheng, Kangguo, Reznicek, Alexander, Hashemi, Pouya
Year of Publication 19.02.2019

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Patent

Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step

Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step

by Schepis, Dominic J, Kerber, Pranita, Reznicek, Alexander, Ouyang, Qiqing C
Year of Publication 12.02.2019

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Patent

Fin field-effect transistor having an oxide layer under one or more of the plurality of fins

Fin field-effect transistor having an oxide layer under one or more of the plurality of fins

by Schepis, Dominic J, Cheng, Kangguo, Reznicek, Alexander, Hashemi, Pouya
Year of Publication 08.01.2019

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Patent

STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON GERMANIUM WITH SAME GERMANIUM CONCENTRATION BY SINGLE EPITAXY STEP

STRUCTURE AND METHOD FOR TENSILE AND COMPRESSIVE STRAINED SILICON GERMANIUM WITH SAME GERMANIUM CONCENTRATION BY SINGLE EPITAXY STEP

by Schepis, Dominic J, Kerber, Pranita, Reznicek, Alexander, Ouyang, Qiqing C
Year of Publication 16.08.2018

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Patent

TRANSISTOR STRUCTURE WITH VARIED GATE CROSS-SECTIONAL AREA

TRANSISTOR STRUCTURE WITH VARIED GATE CROSS-SECTIONAL AREA

by Schepis, Dominic J, Kerber, Pranita, Reznicek, Alexander, Ouyang, Qiqing C
Year of Publication 05.07.2018

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Patent

Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step

Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step

by Schepis, Dominic J, Kerber, Pranita, Reznicek, Alexander, Ouyang, Qiqing C
Year of Publication 19.06.2018

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Patent

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