Growth, fabrication, and characterization of InGaN solar cells
Chen, X., Matthews, K. D., Hao, D., Schaff, W. J., Eastman, L. F.
Published in Physica status solidi. A, Applications and materials science (01.05.2008)
Published in Physica status solidi. A, Applications and materials science (01.05.2008)
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Journal Article
Intrinsic electron accumulation at clean InN surfaces
Mahboob, I, Veal, T D, McConville, C F, Lu, H, Schaff, W J
Published in Physical review letters (23.01.2004)
Published in Physical review letters (23.01.2004)
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Journal Article
Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys
Goldhahn, R., Schley, P., Winzer, A. T., Gobsch, G., Cimalla, V., Ambacher, O., Rakel, M., Cobet, C., Esser, N., Lu, H., Schaff, W. J.
Published in Physica status solidi. A, Applications and materials science (01.01.2006)
Published in Physica status solidi. A, Applications and materials science (01.01.2006)
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Journal Article
Direct Determination of Local Lattice Polarity in Crystals
Mkhoyan, K.A, Batson, P.E, Cha, J, Schaff, W.J, Silcox, J
Published in Science (American Association for the Advancement of Science) (02.06.2006)
Published in Science (American Association for the Advancement of Science) (02.06.2006)
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Journal Article
Evidence for p-type doping of InN
Jones, R E, Yu, K M, Li, S X, Walukiewicz, W, Ager, J W, Haller, E E, Lu, H, Schaff, W J
Published in Physical review letters (31.03.2006)
Published in Physical review letters (31.03.2006)
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Journal Article
Mg-doped InN and InGaN - Photoluminescence, capacitance-voltage and thermopower measurements
Ager III, J. W., Miller, N., Jones, R. E., Yu, K. M., Wu, J., Schaff, W. J., Walukiewicz, W.
Published in Physica Status Solidi (b) (01.05.2008)
Published in Physica Status Solidi (b) (01.05.2008)
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Journal Article
Conference Proceeding
Hot electron cooling rates via the emission of LO-phonons in InN
Zanato, D, Balkan, N, Ridley, B K, Hill, G, Schaff, W J
Published in Semiconductor science and technology (01.08.2004)
Published in Semiconductor science and technology (01.08.2004)
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Journal Article
Undoped AlGaN/GaN HEMTs for microwave power amplification
Eastman, L.F., Tilak, V., Smart, J., Green, B.M., Chumbes, E.M., Dimitrov, R., Hyungtak Kim, Ambacher, O.S., Weimann, N., Prunty, T., Murphy, M., Schaff, W.J., Shealy, J.R.
Published in IEEE transactions on electron devices (01.03.2001)
Published in IEEE transactions on electron devices (01.03.2001)
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Journal Article
n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy
Hageman, P.R., Schaff, W.J., Janinski, Jacek, Liliental-Weber, Zuzanna
Published in Journal of crystal growth (15.06.2004)
Published in Journal of crystal growth (15.06.2004)
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Journal Article
Critical points of the band structure and valence band ordering at the Γ point of wurtzite InN
Goldhahn, R., Schley, P., Winzer, A.T., Rakel, M., Cobet, C., Esser, N., Lu, H., Schaff, W.J.
Published in Journal of crystal growth (01.03.2006)
Published in Journal of crystal growth (01.03.2006)
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Journal Article
Conference Proceeding
Surface band bending at nominally undoped and Mg-doped InN by Auger Electron Spectroscopy
Cimalla, V., Niebelschütz, M., Ecke, G., Lebedev, V., Ambacher, O., Himmerlich, M., Krischok, S., Schaefer, J. A., Lu, H., Schaff, W. J.
Published in Physica status solidi. A, Applications and materials science (01.01.2006)
Published in Physica status solidi. A, Applications and materials science (01.01.2006)
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Journal Article
Inversion and accumulation layers at InN surfaces
Veal, T.D., Piper, L.F.J., Schaff, W.J., McConville, C.F.
Published in Journal of crystal growth (01.03.2006)
Published in Journal of crystal growth (01.03.2006)
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Journal Article
Conference Proceeding
Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer
Dmowski, L. H., Konczewicz, L., Suski, T., Contreras, S., Lu, H., Schaff, W. J.
Published in Physica Status Solidi. B: Basic Solid State Physics (01.04.2013)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.04.2013)
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Journal Article
The influence of conduction band plasmons on core-level photoemission spectra of InN
King, P.D.C., Veal, T.D., Lu, Hai, Hatfield, S.A., Schaff, W.J., McConville, C.F.
Published in Surface science (15.02.2008)
Published in Surface science (15.02.2008)
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Journal Article
Hot carrier relaxation process in InGaN epilayers
Lagarde, D., Carrère, H., Chassaing, P.-M., Balocchi, A., Marie, X., Balkan, N., Schaff, W. J.
Published in Physica Status Solidi (b) (01.05.2011)
Published in Physica Status Solidi (b) (01.05.2011)
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Journal Article
Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN
Darakchieva, V., Lorenz, K., Xie, M.-Y., Alves, E., Schaff, W. J., Yamaguchi, T., Nanishi, Y., Ruffenach, S., Moret, M., Briot, O.
Published in Physica status solidi. A, Applications and materials science (01.01.2012)
Published in Physica status solidi. A, Applications and materials science (01.01.2012)
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Journal Article
Temperature dependence of carrier lifetimes in InN
Chen, Fei, Cartwright, A. N., Lu, H., Schaff, W. J.
Published in Physica status solidi. A, Applications and materials science (01.04.2005)
Published in Physica status solidi. A, Applications and materials science (01.04.2005)
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Journal Article
Role of impurities and dislocations for the unintentional n-type conductivity in InN
Darakchieva, V., Barradas, N.P., Xie, M.-Y., Lorenz, K., Alves, E., Schubert, M., Persson, P.O.Å., Giuliani, F., Munnik, F., Hsiao, C.L., Tu, L.W., Schaff, W.J.
Published in Physica. B, Condensed matter (01.12.2009)
Published in Physica. B, Condensed matter (01.12.2009)
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Journal Article
Conference Proceeding