A Study of On-state Breakdown Decreasing of nLDMOSFETs by Hole Current Increase Depending on Drain Pulse Rise Time
Mori, Takahiro, Yamaguchi, Tomonari, Kamino, Takeshi, Tsuruta, Junji, Okushima, Mototsugu, Sayama, Hirokazu, Iizuka, Koji
Published in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.09.2020)
Published in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.09.2020)
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Conference Proceeding
Improvement of Surface Morphology of Epitaxial Silicon Film for Elevated Source/Drain Ultrathin Silicon-on-Insulator Complementary-Metal-Oxide-Semiconductor Devices
Sugihara, Kohei, Nakahata, Takumi, Matsumoto, Takuji, Maeda, Shigenobu, Maegawa, Shigeto, Ota, Kazunobu, Sayama, Hirokazu, Oda, Hidekazu, Eimori, Takahisa, Abe, Yuji, Ozeki, Tatsuo, Inoue, Yasuo, Nishimura, Tadashi
Published in Japanese Journal of Applied Physics (2003)
Published in Japanese Journal of Applied Physics (2003)
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Journal Article
Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Randam Access Memories (DRAMs)
Takehisa Kishimoto, Takehisa Kishimoto, Yang-Keun Park, Yang-Keun Park, Mikio Takai, Mikio Takai, Yoshikazu Ohno, Yoshikazu Ohno, Kenichirou Sonoda, Kenichirou Sonoda, Hirokazu Sayama, Hirokazu Sayama, Tadashi Nishimura, Tadashi Nishimura, Atsushi Kinomura, Atsushi Kinomura, Yuji Horino, Yuji Horino, Kanenaga Fujii, Kanenaga Fujii
Published in Japanese Journal of Applied Physics (01.12.1995)
Published in Japanese Journal of Applied Physics (01.12.1995)
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Journal Article
High Performance 0.2 µm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing
Nishida, Yukio, Sayama, Hirokazu, Shimizu, Satoshi, Kuroi, Takashi, Furukawa, Akihiko, Teramoto, Akinobu, Uchida, Tetsuya, Inoue, Yasuo, Nishimura, Tadashi
Published in Japanese Journal of Applied Physics (01.03.1998)
Published in Japanese Journal of Applied Physics (01.03.1998)
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Journal Article
Charge collection control using retrograde well tested by proton microprobe irradiation
SAYAMA, H, KIMURA, H, OHNO, Y, SATOH, S, SONODA, K, KOTANI, N, TAKAI, M
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP (01.12.1993)
Published in JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE REV PAP (01.12.1993)
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Conference Proceeding
Journal Article
Well structure by high-energy boron implantation for soft-error reduction in dynamic random access memories (DRAMs)
KISHIMOTO, T, PARK, Y.-K, TAKAI, M, OHNO, Y, SONODA, K, SAYAMA, H, NISHIMURA, T, KINOMURA, A, HORINO, Y, FUJII, K
Published in Japanese journal of applied physics (1995)
Published in Japanese journal of applied physics (1995)
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Conference Proceeding