TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs
Chowdhury, U., Jimenez, J.L., Lee, C., Beam, E., Saunier, P., Balistreri, T., Seong-Yong Park, Taehun Lee, Wang, J., Kim, M.J., Jungwoo Joh, del Alamo, J.A.
Published in IEEE electron device letters (01.10.2008)
Published in IEEE electron device letters (01.10.2008)
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Journal Article
A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology
Campbell, C., Lee, C., Williams, V., Ming-Yih Kao, Hua-Quen Tserng, Saunier, P., Balisteri, T.
Published in IEEE journal of solid-state circuits (01.10.2009)
Published in IEEE journal of solid-state circuits (01.10.2009)
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Journal Article
Conference Proceeding
Effects of AlGaN∕GaN HEMT structure on RF reliability
Lee, C., Witkowski, L., Tserng, H.-Q., Saunier, P., Birkhahn, R., Olson, Dan, Olson, Don, Munns, G., Guo, S., Albert, B.
Published in Electronics letters (2005)
Published in Electronics letters (2005)
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Journal Article
AlGaN∕GaN HEMTs on Si substrate with 7 W∕mm output power density at 10 GHz
Dumka, D.C., Lee, C., Tserng, H.Q., Saunier, P., Kumar, M.
Published in Electronics letters (05.08.2004)
Published in Electronics letters (05.08.2004)
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Journal Article
Effects of AIGaN/GaN HEMT structure on RF reliability
LEE, C, WITKOWSKI, L, TSERNG, H.-Q, SAUNIER, P, BIRKHAHN, R, OLSON, Dan, OLSON, Don, MUNNS, G, GUO, S, ALBERT, B
Published in Electronics letters (03.02.2005)
Published in Electronics letters (03.02.2005)
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Journal Article
AlGaN-GaN HEMTs on SiC with CW power performance of >4 W/mm and 23% PAE at 35 GHz
Lee, C., Saunier, P., Jinwei Yang, Khan, M.A.
Published in IEEE electron device letters (01.10.2003)
Published in IEEE electron device letters (01.10.2003)
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Journal Article
Deletion of the SIM1 gene (6q16.2) in a patient with a Prader-Willi-like phenotype
Faivre, L, Cormier-Daire, V, Lapierre, J M, Colleaux, L, Jacquemont, S, Geneviéve, D, Saunier, P, Munnich, A, Turleau, C, Romana, S, Prieur, M, De Blois, M C, Vekemans, M
Published in Journal of medical genetics (01.08.2002)
Published in Journal of medical genetics (01.08.2002)
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Journal Article
State-of-art CW power density achieved at 26 GHz by AlGaN∕GaN HEMTs
Lee, C., Wang, H., Yang, J., Witkowski, L., Muir, M., Khan, M.A., Saunier, P.
Published in Electronics letters (01.08.2002)
Published in Electronics letters (01.08.2002)
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Journal Article
Effects of RF stress on power and pulsed IV characteristics of AlGaN∕GaN HEMTs with field-plate gates
Lee, C., Tserng, H., Witkowski, L., Saunier, P., Guo, S., Albert, B., Birkhahn, R., Munns, G.
Published in Electronics letters (25.11.2004)
Published in Electronics letters (25.11.2004)
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Journal Article
High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-in GaAs substrates
Dumka, D.C., Tserng, H.Q., Kao, M.Y., Beam, E.A., Saunier, P.
Published in IEEE electron device letters (01.03.2003)
Published in IEEE electron device letters (01.03.2003)
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Journal Article
Is growth hormone treatment beneficial or harmful in Costello syndrome?
Kerr, B, Einaudi, M A, Clayton, P, Gladman, G, Eden, T, Saunier, P, Genevieve, D, Philip, N
Published in Journal of medical genetics (01.06.2003)
Published in Journal of medical genetics (01.06.2003)
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Journal Article
Renal thrombotic microangiopathy in systemic lupus erythematosus : clinical correlations and long-term renal survival
BRIDOUX, F, VRTOVSNIK, F, NOËL, C, SAUNIER, P, MOUGENOT, B, LEMAITRE, V, DRACON, M, LELIEVRE, G, VANHILLE, P
Published in Nephrology, dialysis, transplantation (01.02.1998)
Published in Nephrology, dialysis, transplantation (01.02.1998)
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Journal Article
Is the locus for Costello syndrome on 11p?
Kerr, B, Mucchielli, M L, Sigaudy, S, Fabre, M, Saunier, P, Voelckel, M A, Howard, E, Elles, R, Eden, T O B, Black, G C, Philip, N
Published in Journal of medical genetics (01.06.2003)
Published in Journal of medical genetics (01.06.2003)
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Journal Article
Off-state breakdown in power pHEMTs: the impact of the source
Somerville, M.H., Del Alamo, J.A., Saunier, P.
Published in IEEE transactions on electron devices (01.09.1998)
Published in IEEE transactions on electron devices (01.09.1998)
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Journal Article
Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance
Ronghua Wang, Saunier, P, Xiu Xing, Chuanxin Lian, Xiang Gao, Shiping Guo, Snider, G, Fay, P, Jena, D, Huili Xing
Published in IEEE electron device letters (01.12.2010)
Published in IEEE electron device letters (01.12.2010)
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