Fabrication of ZnSe Diodes with CdSe Quantum-Dot Layers by Molecular Beam Epitaxy
Matsumura, N., Endo, H., Saraie, J.
Published in Physica status solidi. B. Basic research (01.01.2002)
Published in Physica status solidi. B. Basic research (01.01.2002)
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Conference Proceeding
Observation of emissions from CdSe single quantum dots and spatial mapping by micro-cathodoluminescence measurement
Saraie, J., Matsumura, N., Sugie, R., Yoshikawa, M.
Published in Physica status solidi. C (01.03.2004)
Published in Physica status solidi. C (01.03.2004)
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Journal Article
Molecular beam epitaxial growth of ZnSe(1 1 1) films on GaAs(1 1 1)B substrates and nitrogen doping
Matsumura, N., Matsuoka, T., Shimakawa, H., Saraie, J.
Published in Journal of crystal growth (01.05.1997)
Published in Journal of crystal growth (01.05.1997)
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Journal Article
Molecular beam epitaxial growth of ZnSe(111) films on misoriented GaAs(111) A substrates
Matsumura, N., Maemura, K., Mori, T., Saraie, J.
Published in Journal of crystal growth (01.02.1996)
Published in Journal of crystal growth (01.02.1996)
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Conference Proceeding
Atomic scale identification of the terminating structure of compound materials by CAICISS (coaxial impact collision ion scattering spectroscopy)
Ishiyama, O., Nishihara, T., Hayashi, S., Shinohara, M., Yoshimoto, M., Ohnishi, T., Koinuma, H., Nishino, S., Saraie, J.
Published in Applied surface science (01.11.1997)
Published in Applied surface science (01.11.1997)
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Nitrogen-doped ZnSe(100) films grown by molecular beam epitaxy using a capacitively coupled plasma cell
Saraie, J., Yamawaki, K., Matsumura, N., Ikehara, A.
Published in Journal of crystal growth (01.02.1996)
Published in Journal of crystal growth (01.02.1996)
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Conference Proceeding
Optimum growth conditions of molecular beam epitaxial growth of ZnSe at a low temperature
Matsumura, N., Maemura, K., Takanaka, N., Ichikawa, S., Saraie, J.
Published in Journal of crystal growth (01.05.1995)
Published in Journal of crystal growth (01.05.1995)
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Conference Proceeding
Migration enhancement on ZnSe surface in photoassisted molecular beam epitaxy and long duration time of the effects
Ichikawa, S., Matsumura, N., Yamawaki, K., Senga, K., Saraie, J.
Published in Journal of crystal growth (01.04.1994)
Published in Journal of crystal growth (01.04.1994)
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Conference Proceeding
Photo-assisted MBE growth of ZnSe on GaAs substrates
Matsumura, N., Fukada, T., Senga, K., Fukushima, Y., Saraie, J.
Published in Journal of crystal growth (01.05.1991)
Published in Journal of crystal growth (01.05.1991)
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Conference Proceeding
Electrical transport characterizations of nitrogen doped ZnSe and ZnTe films
Fan, Y., Han, J., He, L., Saraie, J., Gunshor, R. L., Hagerott, M., Nurmikko, A. V.
Published in Journal of electronic materials (01.03.1994)
Published in Journal of electronic materials (01.03.1994)
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High quality Al2O3 thin films prepared by a novel two-step evaporation process
SARAIE, J, GOTO, S, KITAO, Y, YODOGAWA, Y
Published in Journal of the Electrochemical Society (1987)
Published in Journal of the Electrochemical Society (1987)
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Preparation of hydrogenated amorphous Si-C alloy films and their properties
Saraie, J., Fujii, Y., Yoshimoto, M., Yamazoe, K., Matsunami, H.
Published in Thin solid films (01.01.1984)
Published in Thin solid films (01.01.1984)
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Optimum composition in MBE-ZnSxSe1-x/GaAs for high quality heteroepitaxial growth
MATSUMURA, N, TSUBOKURA, M, MIYAGAWA, K, NAKAMURA, N, SARAIE, J
Published in Journal of crystal growth (1990)
Published in Journal of crystal growth (1990)
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High Quality Al2 O 3 Thin Films Prepared by a Novel Two‐Step Evaporation Process
Saraie, J., Goto, S., Kitao, Y., Yodogawa, Y.
Published in Journal of the Electrochemical Society (01.11.1987)
Published in Journal of the Electrochemical Society (01.11.1987)
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